1998
DOI: 10.1016/s1359-6454(97)00336-4
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Amorphous phase forming ability in(W–C)-based sputtered films

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Cited by 32 publications
(20 citation statements)
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“…A possible explanation to this tribological behaviour can be given by considering a friction induced decomposition of the nonstoichiometric carbides and/or metastable solid solutions releasing free carbon and forming structures that accomodate carbon vacancies. In this sense, the decomposition of tungsten carbide generating carbon and substoichiometric W x C y compounds is described in the phase diagram of the W-C system and was confirmed during thermal annealing of these same coatings [40,41]. In the case of the TiBC/a-C, previous studies have pointed out the formation of a metastable hexagonal TiB x C y phase by addition of carbon into a initial hexagonal TiB 2 structure [31,42] or binary and ternary solid solution of the Ti-B-C system [42,43].…”
Section: Jc Sanchez-lopez Et Al (Paper B6-2-1)mentioning
confidence: 62%
“…A possible explanation to this tribological behaviour can be given by considering a friction induced decomposition of the nonstoichiometric carbides and/or metastable solid solutions releasing free carbon and forming structures that accomodate carbon vacancies. In this sense, the decomposition of tungsten carbide generating carbon and substoichiometric W x C y compounds is described in the phase diagram of the W-C system and was confirmed during thermal annealing of these same coatings [40,41]. In the case of the TiBC/a-C, previous studies have pointed out the formation of a metastable hexagonal TiB x C y phase by addition of carbon into a initial hexagonal TiB 2 structure [31,42] or binary and ternary solid solution of the Ti-B-C system [42,43].…”
Section: Jc Sanchez-lopez Et Al (Paper B6-2-1)mentioning
confidence: 62%
“…In our case, cr-Ti exists at room temperature with ~50 at.% of Al. The basic reason for a metastable solid solution forming under such conditions might be envisaged on the sputtering process [9]. The high cooling rates reached b> this process give rise to a low mobility of the adatoms.…”
Section: Resultsmentioning
confidence: 99%
“…The films offer excellent material properties such as hardness, very high melting points (3422 8C), and chemical resistance, which can be utilized for surface protection of softer materials, or materials which are more prone to corrosion. [5] The tungsten carbide phases WC and WC 2 are promising thin film diffusion barrier materials for microelectronic devices because of their chemical inertness [6,7] and good electrical conductivity. Due to the high melting points (2870 8C for WC), tungsten carbide thin films are suitable for strengthening the surface of metal-cutting and wire-drawing dies.…”
Section: Introductionmentioning
confidence: 99%