Amorphous molybdenum nitride thin films prepared by reactive sputter deposition

Wang, Yimin; Lin, Rungtai

doi:10.1016/j.mseb.2004.05.010

Cited by 86 publications

(46 citation statements)

References 16 publications

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“…It is worth noting that the nitrogen partial pressure is one order of magnitude larger than in [29]. However, in both works the orientation of crystallites as well as the transition to an amorphous structure seems to be due to an excess of nitrogen in the structure, the N/Mo mole ratio is equal to 0.67 and 0.72 in references [29] and [31], respectively. No columnar structure was observed in all as-deposited films under different nitrogen pressure values [31].…”

Section: Reactive Sputtering Methodsmentioning

confidence: 85%

“…However, in both works the orientation of crystallites as well as the transition to an amorphous structure seems to be due to an excess of nitrogen in the structure, the N/Mo mole ratio is equal to 0.67 and 0.72 in references [29] and [31], respectively. No columnar structure was observed in all as-deposited films under different nitrogen pressure values [31]. The authors in [31] also investigated the bonding states of nitrogen and molybdenum by using X-ray photoelectron spectroscopy (XPS) and they found a continuous shift of the Mo3d5/2 XPS peak towards high binding energy from 228.1 eV to 228.5 eV, whereas the N1s XPS peak shifts towards low binding energy with increasing nitrogen partial pressure.…”

Section: Reactive Sputtering Methodsmentioning

confidence: 96%

“…Wang et al [31] have prepared molybdenum nitride films on Si wafers by pulsed dc reactive sputtering. The discharge power is equal to 150 W and the total pressure of (Ar-N2) gas mixture is fixed at 0.66 Pa.…”

Section: Reactive Sputtering Methodsmentioning

confidence: 99%

“…No columnar structure was observed in all as-deposited films under different nitrogen pressure values [31]. The authors in [31] also investigated the bonding states of nitrogen and molybdenum by using X-ray photoelectron spectroscopy (XPS) and they found a continuous shift of the Mo3d5/2 XPS peak towards high binding energy from 228.1 eV to 228.5 eV, whereas the N1s XPS peak shifts towards low binding energy with increasing nitrogen partial pressure. This is due to the increase of charge transfer from Mo to N atoms, which leads to a more ionic Mo-N bond.…”

Section: Reactive Sputtering Methodsmentioning

confidence: 99%

“…Molydenum nitrides have also been synthesized in the form of amorphous structures such as Mo72N28 [31] and Mo75N25 [9] as well as compounds with N/Mo ratio larger than 1, such as the gold colored Mo3N2 phase [43].…”

Section: Amorphous Structuresmentioning

confidence: 99%

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Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

et al. 2015

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Among transition metal nitrides, molybdenum nitrides have been much less studied even though their mechanical properties as well as their electrical and catalytic properties make them very attractive for many applications. The δ-MoN phase of hexagonal structure is a potential candidate for an ultra-incompressible and hard material and can be compared with c-BN and diamond. The predicted superconducting temperature of the metastable MoN phase of NaCl-B1-type cubic structure is the highest of all refractory carbides and nitrides. The composition of molybdenum nitride films as well as the structures and properties depend on the parameters of the process used to deposit the films. They are also strongly correlated to the electronic structure and chemical bonding. An unusual mixture of metallic, covalent and ionic bonding is found in the stoichiometric compounds.

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Section: Reactive Sputtering Methodsmentioning

confidence: 85%

Section: Reactive Sputtering Methodsmentioning

confidence: 96%

Section: Reactive Sputtering Methodsmentioning

confidence: 99%

Section: Reactive Sputtering Methodsmentioning

confidence: 99%

Section: Amorphous Structuresmentioning

confidence: 99%

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Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

et al. 2015

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Surface Characteristics of MoN_x Thin Films Obtained by Reactive rf Magnetron Sputtering in UHV System

Jeong

Park

Choi

et al. 2015

Bulletin Korean Chem Soc

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Molybdenum nitride (MoN x ) thin films were deposited on p-type Si(1 0 0) wafer using reactive radio frequency magnetron sputtering at various nitrogen gas ratios in an ultra high vacuum (UHV) system. Two metallic phases, Mo(1 1 0) and Mo(2 1 1), were detected from the film obtained without nitrogen gas in the sputter gas. The thickness of the films measured with a surface profiler decreased from 186.0 to 21.5 nm with increasing nitrogen gas ratio in the sputter gas from 0 to 100%, respectively. From the X-ray photoelectron spectroscopy (XPS) analysis, Mo species were further oxidized by the addition of nitrogen gas in the sputter gas. As nitrogen gas was introduced, the portion of Mo 4+ species decreased while those of Mo 5+ and Mo 6+ species increased. As the nitrogen gas ratio in the sputter gas increased, the formation of MoN x thin films was confirmed by N 1s XPS spectra. The conductivity decreased from 927.7 to 97.1 S/cm with 0 and 100% of nitrogen gas ratio, respectively.Keywords: Mo nitride, Radio frequency magnetron sputtering, X-ray photoelectron spectroscopy, X-ray diffraction, Conductivity, Ultra high vacuum IntroductionMolybdenum nitride (MoN x ) thin films have been applied as anodes of Ni batteries, 1 catalysts, 2-4 and diffusion barriers [5][6][7][8][9][10][11][12][13][14] because MoN x thin films have outstanding properties for these applications, such as morphology, 3 low resistivity, 13 and hardness.14 Various methods for synthesizing MoN x thin film have been reported including hydrothermal method, 2 cathodic arc evaporation method, 10 chemical solution method, 11 radio frequency (rf ) sputtering, 13-16 dc sputtering, 5-9,17-19 and hightemperature plasma. 20 Previous studies have adapted sputtering methods to fabricate MoN x thin films because it can be applied in low-temperature environment and for large-area substrate. These advantages make sputtering a more efficient method for industry than others. Previously reported results of fabrication of MoN x films used sputtering methods. [5][6][7][8][9][13][14][15][16][17][18] Anitha et al. prepared MoN x thin film using rf magnetron sputtering with varying nitrogen gas ratio. The crystallization was determined as Mo 2 N with several phases. 13 With increasing nitrogen gas ratio from 0 to 89%, resistivity increased from 0.26 to 6.00 μΩm. Kumar et al. used reactive dc magnetron sputtering for deposition of MoN x films as nitrogen gas flow changed from 0 to 20 sccm. Deposition rate of MoN x thin films decreased as nitrogen flow rate increased.6 Crystallinity changed as nitrogen gas ratio increased from γ-Mo 2 N(1 1 1) through β-Mo 2 N(2 0 0), Mo 3 N 2 (1 1 1), Mo 16 N 7 (4 0 0), β-Mo 2 N(2 2 0), and Mo 5 N 6 (1 1 0), to Mo 16 N 7 (4 0 0). Resistivity of MoN x thin films increased from 3.0 × 10 −9 to 1.8 × 10 −6 Ωm as nitrogen ratio increased from 0 to 33%. MoN x thin film was thermally stable below 600 C. However, they did not give any information about composition of the surface and oxidation states of Mo. In this study, we report the results of...

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Magnetron Sputtered Thin Films Based on Transition Metal Nitride: Structure and Properties

Bharani

Sharma

2022

Physica Status Solidi (a)

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Transition metal nitride (TMN) thin films exhibit outstanding physical, chemical, and mechanical properties, making them best suitable for a wide variety of applications. The most commonly used technique to produce metal nitride thin films with specific properties at optimum conditions is magnetron sputtering. Considering this, this review begins with advancements in the sputtering process from basic diode sputtering to the most commonly used pulsed magnetron sputtering. Further, the literature on several TMNs deposited via magnetron sputtering is summarized, referring to several articles that have been published during the last decades. The main emphasis lies on nitride-based thin films' structural, morphological, and mechanical aspects for various applications. In addition, the influence of reactive gas flow rate, substrate temperature, layer thickness, postannealing temperature, substrate bias voltage, protective layers, the sputtering technique adopted, etc. on the quality and performance of the thin films is also focused. The overall review work can be beneficial for the students and researchers in understanding the basic sputtering phenomenon with its advancements, the relationship between deposition parameters and surface properties, and to know the current research trend for exploring several research gaps in the literature.

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Amorphous molybdenum nitride thin films prepared by reactive sputter deposition

Cited by 86 publications

References 16 publications

Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

Surface Characteristics of MoN_x Thin Films Obtained by Reactive rf Magnetron Sputtering in UHV System

Magnetron Sputtered Thin Films Based on Transition Metal Nitride: Structure and Properties

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Amorphous molybdenum nitride thin films prepared by reactive sputter deposition

Cited by 86 publications

References 16 publications

Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

Surface Characteristics of MoNx Thin Films Obtained by Reactive rf Magnetron Sputtering in UHV System

Magnetron Sputtered Thin Films Based on Transition Metal Nitride: Structure and Properties

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Surface Characteristics of MoN_x Thin Films Obtained by Reactive rf Magnetron Sputtering in UHV System