Amorphous MgInO Ultraviolet Solar-Blind Photodetectors

Abstract

The magnesium oxide is one of the promising candidate's materials that can act as solar blind photodetectors. However, the intrinsically low thermal conductivity of MgO, which is restrict the application in electric device. The magnesium oxide exhibits the poor conductivity which could improved by doing method. This paper fabricated magnesium indium oxide (MgInO) solar-blind photodetectors by doping indium oxide with magnesium oxide through co-sputtering deposition method. The photodetector comprises a bottom glass substrate, an MgInO thin film, and an interdigitated gold electrode to complete the metal-semiconductor-metal structure of the solar-blind photodetector. The experimental results indicate that the photo-to-dark-current ratio is 1.4×10 4 , and the responsivity is 1.47 A/W when a reverse bias voltage of 2 V is applied. Furthermore, the noise equivalent power and detectivity are 7.77 × 10 −11 W and 1.75 × 10 11 cm H 0.5 W −1 with a 2 V bias voltage, respectively.

High-Efficiency and High-Precision Reconstruction Strategy for P-Band Ultra-Wideband Bistatic Synthetic Aperture Radar Raw Data Including Motion Errors

“…With the rapid development of the remote sensing techniques [1]- [7], the huge amount of the remote sensing data has been acquired from the sensor platforms such as the satellites and aircrafts [8], [9], complemented by the surface and subsurface measurements and mapping [10], [11]. The remote sensing data is useful for the inventarisation and management of the natural resources (such as the The associate editor coordinating the review of this manuscript and approving it for publication was Wei Wang .…”

Ultraviolet Photodetection Application in Magnesium Indium Oxide Thin Film Transistors via Co-Sputtering Deposition

“…Compared with indium and oxygen, the higher electronegativity values of the Mg element (1.2) can reduce the defect by forming oxygen vacancies [14]. Furthermore, MgO is suitable for solar-blind photodetection because of its transparent semiconductor with a wide bandgap of~7.8 eV and ability to remain physically and chemically stable at high temperatures [15]. Electrical properties of In 2 O 3 TFTs can be improved and bandgaps engineered via MgO doping and tuning the composition of MgO and In 2 O 3 in the active layer.…”

P‐1.17: Ultraviolet Light Response of Amorphous Oxide Thin‐Film Transistors with Double‐Stacked Channel Layers

“…Especially, Device D achieved 28.6 dB of sensitivity and 9.7×10 -7 A/W of responsivity when it was illuminated by the UV light with wavelength = 370 nm. In addition, detectivity (D*) is a merit figure of photodetectors, which is normalized on the basis of R: the dark current density[13]. As shown in Fig.2(c), Device D showed the largest D* value (1.6×10 8 cm•Hz 0.5 •W -1 for the wavelength = 370 nm) among the four samples.…”