Amorphous InGaZnO Thin Film Transistor Fabricated with Printed Silver Salt Ink Source/Drain Electrodes

Yang, Caigui; Fang, Zhiqiang; Ning, Honglong; Tao, Ruiqiang; Chen, Jianqiu; Zhou, Yicong; Zheng, Zeke; Yao, Rihui; Wang, Lei; Peng, Junbiao; Song, Yongsheng

doi:10.3390/app7080844

Cited by 11 publications

(8 citation statements)

References 26 publications

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“…[ 168 ] When analyzed by electron energy loss spectroscopy (EELS), a silver salt‐based ink (TEC‐IJ‐010, INKTEC, Korea) was employed to fabricate inkjet‐printed Ag contacts that presented significantly less accumulation of carbon impurities at the interface of the Ag and IGZO semiconductor than was observed when devices were prepared using an Ag NP based ink (Figure 6c). [ 50 ] However, the generated Ag material exhibited a porous structure, which might compromise mechanical durability and lead to a collection of point‐like contacts to the semiconductor. In another study investigating the same Ag ink versus sputtered Ag, [ 12 ] the bulk of the printed Ag material was also observed by transmission electron microscopy (TEM) to be porous, but there appeared to be an intimate contact for charge injection between IGZO and Ag.…”

Section: Methodsmentioning

confidence: 99%

Focused Review on Print‐Patterned Contact Electrodes for Metal‐Oxide Thin‐Film Transistors

Liu

Gillan

Leppäniemi

et al. 2023

Adv Materials Inter

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mechanical flexibility, higher charge-carrier mobility than that of organic materials or amorphous silicon, and low processing temperature as compared to amorphous and polycrystalline silicon TFTs. [18][19][20][21] Parallel to the achievements of metaloxide TFTs, organic materials, carbon nanotubes (CNTs), and 2D materials have also been constantly developed. For recent reviews, see refs. [22,23]. The material approaches differ in their characteristics such as charge-carrier type (electrons or holes), charge-carrier mobility, environmental and electrical stability, mechanical flexibility, operation voltage, thermal budget of processing, technology readiness level for high-throughput fabrication, and sustainability (environmental footprint of materials and processes). There are also approaches that combine different material classes, for example, to implement complementary logic by combining the predominantly n-type oxide TFTs with p-type organic TFTs. [24] In this paper, we focus on the metal-oxide TFTs that are among the highest-performing alternatives for flexible thin-film devices that can be patterned by printing and that have already reached the maturity of being used in product fabrication (e.g., flat-panel displays). [2] The first metal-oxide-based TFT employed tin oxide (SnO 2 ) as the semiconductor and was invented by Klasens et al. in 1964, opening the door for research into transparent metal oxide TFTs. [25] Owing to the technology and material-processing limitations at that time, only a few studies focused on this area until 2003. During that year, zinc-oxide-based (ZnO) TFTs with mobility of µ = 2.5 cm 2 V −1 s −1 were successfully manufactured by Hoffman et al., Carcia et al., In the same year, Nomura et al. made a breakthrough with the first use of the quaternary-oxide semiconductor IGZO in a single-crystalline form to fabricate the TFTs, rather than some more conventional binary oxides such as ZnO, indium oxide (In 2 O 3 ), and SnO 2 . This kind of device that required annealing at 1400 °C displayed better electrical properties than its binary counterparts, with 80 cm 2 V −1 s −1 mobility and a 10 6 on/off ratio. [29] The following year in 2004, they reported flexible TFTs fabricated at room temperature on polymer film based on amorphous IGZO (a-IGZO) with saturation mobility of ≈6-9 cm 2 V −1 s −1 . [30] The discovery of a-IGZO raised substantial interest in research on amorphous metal-oxide TFTs and their low-temperature Metal-oxide-semiconductor-based thin-film transistors (TFTs) are exploited in display backplanes and X-ray detectors fabricated by vacuum deposition and lithographic patterning. However, there is growing interest to use scalable printing technologies to lower the environmental impact and cost of processing. There have been substantial research efforts on oxide dielectric and semiconductor materials and their interfaces. Materials for the source/ drain (S/D) contact electrodes and their interface to the semiconductor have received less attention, particularly concerning the usa...

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Section: Methodsmentioning

confidence: 99%

Focused Review on Print‐Patterned Contact Electrodes for Metal‐Oxide Thin‐Film Transistors

Liu

Gillan

Leppäniemi

et al. 2023

Adv Materials Inter

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“…In addition, several types of silver inks were inkjet-printed on IGZO thin film for completing TFTs, and it was found that Ag salt ink is much better than Ag nanoparticle ink to produce high-performance TFTs. The IGZO TFTs with printing Ag S/D electrodes showed a mobility of 4.28 cm 2 V –1 s –1 and an I on / I off of 10 6 . Meanwhile, some approaches were proposed for fabricating short channels with printing electrodes.…”

Section: Printed Tfts On Rigid Substratementioning

confidence: 99%

“…The IGZO TFTs with printing Ag S/ D electrodes showed a mobility of 4.28 cm 2 V −1 s −1 and an I on / I off of 10 6 . 136 Meanwhile, some approaches were proposed for fabricating short channels with printing electrodes. Tang et al fabricated inkjet-printed Ag S/D electrodes with accurate control and produced the short channels with the width down to 20 μm by controlling ink wetting on a PVA surface, leading to form good interface contacts between organic semiconductor and electrodes (Figure 8b, c).…”

Section: Acs Applied Materials and Interfacesmentioning

confidence: 99%

Printed Thin-Film Transistors: Research from China

Tong

Sun

Yang

2018

ACS Appl. Mater. Interfaces

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Thin-film transistors (TFTs) have experienced tremendous development during the past decades and show great promising applications in flat displays, sensors, radio frequency identification tags, logic circuit, and so on. The printed TFTs are the key components for rapid development and commercialization of printed electronics. The researchers in China play important roles to accelerate the development and commercialization of printed TFTs. In this review, we comprehensively summarize the research progress of printed TFTs on rigid and flexible substrates from China. The review will focus on printing techniques of TFTs, printed TFT components including semiconductors, dielectrics and electrodes, as well as fully printed TFTs and printed flexible TFTs. Furthermore, perspectives on the remaining challenges and future developments are proposed.

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“…Conductive electrodes are of paramount importance for electronic devices because they provide effective electrical contacts for various functional components. − Vacuum deposition is conventionally used for making electrode patterns. Compared to this method, inkjet printing could significantly reduce cost, save consumables, and improve production efficiency, therefore, printing is highly desirable for commercial mass production. , However, printing high-quality conductive patterns is still a challenge because the flow field inside the liquid film is a complex process.…”

Section: Introductionmentioning

confidence: 99%

Morphological Regulation of Printed Low-Temperature Conductive Ink

Liu

Guo²,

et al. 2022

Langmuir

Self Cite

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The unbalanced evaporation of solvents in lowtemperature sintered inks for printed electronics leads to a series of problems in the actual printing process, including printed pattern distortion, surface cracking, and the coffee ring effect, which has become a serious obstacle to this technique. Here, we present a comprehensive investigation of the influence of the solvent composition, environmental, and sintering conditions on the complicated pattern formation process of reactive silver inks. The results first showed that only inks with a certain wettability of solvents could form well-defined patterns. Then, the solvent composition and ambient humidity can be adjusted to balance the nonequilibrium evaporative flow within the liquid and thus to obtain a flat liquid film. Combined with the rapid UV sintering process, the particle size, porosity, and roughness could be controlled to produce dense and homogeneous silver films. Finally, we successfully printed silver electrodes with a smooth and dense surface (R qs ∼ 21 nm in 0.8 × 0.8 mm 2 area and less than 1% porosity) under an optimized relative humidity (RH) of 50−60% at room temperature with the solvent composition of IPA (isopropanol)/2,3-BD (2,3-butanediol) = 8:2. In addition, we also demonstrated high-performance Pr−IZO (praseodymium-doped indium−zinc oxide) thin film transistors (TFTs) with a mobility (μ sat ) of 2.14 cm 2 /V/s and I on /I off ratio of over 10 7 using source−drain electrodes printed under optimized conditions.

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Amorphous InGaZnO Thin Film Transistor Fabricated with Printed Silver Salt Ink Source/Drain Electrodes

Cited by 11 publications

References 26 publications

Focused Review on Print‐Patterned Contact Electrodes for Metal‐Oxide Thin‐Film Transistors

Focused Review on Print‐Patterned Contact Electrodes for Metal‐Oxide Thin‐Film Transistors

Printed Thin-Film Transistors: Research from China

Morphological Regulation of Printed Low-Temperature Conductive Ink

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