Amorphous indium tungsten oxide films prepared by DC magnetron sputtering

Abe, Yoshiyuki; Ishiyama, Noriko; Kuno, Hiroko; Adachi, Kenji

doi:10.1007/s10853-005-0660-5

Cited by 14 publications

(9 citation statements)

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“…The consequential idea is to combine both materials and search for a trade-off. There are reports on indium-tungsten-oxide (IWO x ) layers with up to 7 % WO x applied as transparent conductive oxides 11,28 . These layers are among the doped indium oxide layers with the highest mobility 11 .…”

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confidence: 99%

“…There are reports on indium-tungsten-oxide (IWO x ) layers with up to 7 % WO x applied as transparent conductive oxides 11,28 . These layers are among the doped indium oxide layers with the highest mobility 11 . Furthermore WO x doped InO x films (1 wt%) have been applied in silicon heterojunction solar cells as double anti reflective coating leading to up to 23 % efficiency 29 .…”

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confidence: 99%

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Electronic structure of indium-tungsten-oxide alloys and their energy band alignment at the heterojunction to crystalline silicon

Menzel

Mews

Rech

et al. 2018

Applied Physics Letters

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The electronic structure of thermally co-evaporated indium-tungsten-oxide films is investigated. The stoichiometry is varied from pure tungsten oxide to pure indium oxide and the band alignment at the indium-tungsten-oxide/crystalline silicon heterointerface is monitored. Using in-system photoelectron spectroscopy, optical spectroscopy and surface photovoltage measurements we show that the work function of indium-tungsten-oxide continuously decreases from 6.3 eV for tungsten oxide to 4.3 eV for indium oxide, with a concomitant decrease of the band bending at the hetero interface to crystalline silicon than indium oxide.

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confidence: 99%

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confidence: 99%

Electronic structure of indium-tungsten-oxide alloys and their energy band alignment at the heterojunction to crystalline silicon

Menzel

Mews

Rech

et al. 2018

Applied Physics Letters

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“…Consistent with our previous report, 18 atomic force microscopy showed that the IWO films have continuously smooth surfaces (the root mean square roughness is 0.27 nm), which indicates no crystalline structure. The crystallization temperature of the IWO films becomes higher with increasing WO 3 content; 22 the IWO-5 film showed no crystallization even after annealing at 250 C. Thus, the IWO films are applicable to the fabrication of flexible OLED displays in which the process must occur at a low temperature.…”

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confidence: 99%

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

et al. 2014

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“…[12,18] Other metal oxides, e.g., indium(III) oxide (In 2 O 3 ), are known for their high conductivity, which can be even increased by doping with various elements, such as hydrogen, [19] zinc, [19] molybdenum, [20] and tungsten. [21] Different to the well-known dopant tin, these dopants increase the conductivity by increasing not only the charge carrier concentration, but also the charge carrier mobility. [11] On the other hand, indium oxide possesses a rather low work function of about 4.7 eV.…”

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Evolution of Optical, Electrical, and Structural Properties of Indium Tungsten Oxide upon High Temperature Annealing

Menzel

Korte

2020

Physica Status Solidi (a)

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Optical, structural and electrical properties of thermally co‐evaporated indium tungsten oxide (IWOx) thin films with varied stoichiometry, from pure tungsten oxide to pure indium oxide (InOx) are investigated upon stepwise annealing, up to 700 °C. The thin films are candidate materials for carrier selective contacts in different types of solar cells, such as silicon hetero junction and perovskite solar cells. Three different phases for the thin films with different stoichiometry and crystallization temperatures of Tc > 500 °C for tungsten‐rich layers and Tc ≈ 200 °C for indium‐rich layers are found. The pronounced optical absorption of the as‐deposited InOx‐rich layers is strongly decreased after crystallization. Tungsten oxide rich layers show low optical absorption in the as‐deposited state as well as for all applied annealing temperatures. The lateral conductivity of the pure indium oxide can be increased from 1.24 × 10−2 up to 0.83 S cm−1 after 700 °C annealing. The conductivity of the pure tungsten oxide increases slightly after crystallization from 2.55 × 10−5 to 8.25 × 10−5 S cm−1 after annealing at 700 °C. However, for mixed oxide layers with ≈25% InOx‐fraction in the mixture, the highest conductivity of 4.0 × 10−6 S cm−1 cannot be increased by the applied annealing process.

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Amorphous indium tungsten oxide films prepared by DC magnetron sputtering

Cited by 14 publications

References 10 publications

Electronic structure of indium-tungsten-oxide alloys and their energy band alignment at the heterojunction to crystalline silicon

Electronic structure of indium-tungsten-oxide alloys and their energy band alignment at the heterojunction to crystalline silicon

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

Evolution of Optical, Electrical, and Structural Properties of Indium Tungsten Oxide upon High Temperature Annealing

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