Amorphous hydrogenated carbon-nitride films prepared by RF-PECVD in methane–nitrogen atmospheres

Motta, E. F.; Pereyra, I.

doi:10.1016/j.jnoncrysol.2004.03.034

Cited by 38 publications

(26 citation statements)

References 22 publications

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“…Carbon nitride can be formed either as crystalline or amorphous films. The tendency to synthesis amorphous carbon nitride is much higher [2,3,4]. Amorphous carbon nitride (a-CN x ) has many interesting properties such as extreme hardness, low friction coefficient, and variable optical band gap [5].…”

Section: Introductionmentioning

confidence: 99%

Effect of RF power and annealing on chemical bonding and morphology of a-CNx thin films as humidity sensor

Aziz¹,

Ritikos²,

Kamal³

et al. 2013

AIP Conference Proceedings

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Structural and electronic properties of electron cyclotron resonance plasma deposited hydrogenated amorphous carbon and carbon nitride films Journal of Applied Physics 91, 4154 (2002) Abstract. Amorphous carbon nitride (a-CN x ) thin films were deposited using radio frequency plasma enhanced chemical vapor deposition (rf-PECVD) technique. A set of a-CN x thin films were prepared using pure methane (CH 4 ) gas diluted with nitrogen (N 2 ) gas. The rf power was varied at 50, 60, 70, 80, 90 and 100 W. These films were then annealed at 400 o C in a quartz tube furnace in argon (Ar) gas. The effects of rf power and thermal annealing on the chemical bonding and morphology of these samples were studied. Surface profilometer was used to measure film thickness. Fourier transform infra-red spectroscopy (FTIR) and Field emission scanning electron microscopy (FESEM) measurements were used to determine their chemical bonding and morphology respectively. The deposition rate of the films increased constantly with increasing rf power up to 80W, before decreasing with further increase in rf power. Fourier transform infra-red spectroscopy (FTIR) studies showed a systematic change in the spectra and revealed three main peaks included C-N, C=N, C=C and C≡N triple bond. C=N and C≡N bonds decreased with increased C-N bonds after thermal annealing process. The FESEM images showed that the structure is porous for as-deposited and covered by granule-like grain structure after thermal annealing process was done. The resistance of the a-CN x thin film changed from 23.765 kΩ to 5.845 kΩ in the relative humidity range of 5 to 92 % and the film shows a good response and repeatability as a humidity sensing materials. This work showed that rf power and thermal annealing has significant effects on the chemical bonding and surface morphology of the a-CN x films and but yield films which are potential candidate as humidity sensor device.

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Section: Introductionmentioning

confidence: 99%

Effect of RF power and annealing on chemical bonding and morphology of a-CNx thin films as humidity sensor

Aziz¹,

Ritikos²,

Kamal³

et al. 2013

AIP Conference Proceedings

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show abstract

“…In the region of C-N bonds, the peak is decreasing with an increase in the related C=C and C=N bonds as deposition time increase. This might be explained by energetic ion bombardment facilitates the C=C and C=N bonds in detriment of the C-N bond [9]. As for C≡N region, is related to the existence of nitrile (-C≡N) and isonitrile groups (-N≡C) in the film with wave number of 2220-2230 cm -1 and 2115-2175 cm -1 respectively.…”

Section: Resultsmentioning

confidence: 99%

“…The N/C atomic concentration ratio shows an increasing trend with the increase in deposition time from 30 to 60 minutes and a slow decreasing trend with further increase in deposition time. The saturation trend represents one of the major difficulties for obtaining carbon nitride films [9]. The increasing of N/C atomic configuration from t= 30 minutes to 60 minutes led to the dominance of N-H bond in the FTIR spectra.…”

Section: Resultsmentioning

confidence: 99%

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Influence of deposition time on the chemical bonding and composition of amorphous carbon nitride films

Azman¹,

Awang²,

Kamal³

2014

AIP Conference Proceedings

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“…Karbon nitrida telah disintesis oleh sekumpulan penyelidik setelah Liu dan Cohen meramalkan kekuatan bahan β-C 3 N 4 secara teorinya setanding dengan atau lebih kuat daripada berlian (Liu et al 1989). Walau bagaimanapun, tiada penemuan yang kukuh kerana kesukaran penghasilan karbon nitrida pada fasa tersebut (Motta et al 2004). Tetapi, pertumbuhan filem nipis karbon nitrida dalam bentuk amorfus (a-CN x ) boleh dihasilkan dengan mudah.…”

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Kesan Kuasa Frekuensi Radio terhadap Komposisi Ikatan Kimia Filem Nipis a-CNx sebagai Pengesan Kelembapan

Aziz

Awang²

2017

JSM

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Amorphous hydrogenated carbon-nitride films prepared by RF-PECVD in methane–nitrogen atmospheres

Cited by 38 publications

References 22 publications

Effect of RF power and annealing on chemical bonding and morphology of a-CNx thin films as humidity sensor

Effect of RF power and annealing on chemical bonding and morphology of a-CNx thin films as humidity sensor

Influence of deposition time on the chemical bonding and composition of amorphous carbon nitride films

Kesan Kuasa Frekuensi Radio terhadap Komposisi Ikatan Kimia Filem Nipis a-CNx sebagai Pengesan Kelembapan

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