Amorphous Ga₂O₃ Thin-Film Phototransistors for Imaging and Logic Illustration

Amorphous Gallium Oxide-Based Crosstalk-Suppressing Solar-Blind Imaging Array Prepared by One-Step Method

“…When the bias voltage is −3 V, even if half of the light absorption is blocked by the Au top electrode, the photon response rate can still reach 334 mA/W. Here, optical responsiveness ( R ) can be expressed as: − R = I photo − I dark ρ light S where I photo is the photo current, I dark is the dark current, ρ light is the optical power density, and S is the device area. The above optical characteristics show that a-Ga 2 O 3 thin film is very suitable for manufacturing high-performance solar-blind photodetectors in the UVC region (210–280 nm).…”