2018
DOI: 10.1007/978-3-319-75377-5_9
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Amorphous/Crystalline Si Heterojunction Solar Cells

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Cited by 5 publications
(5 citation statements)
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“…Further possible effects are for instance interference enhanced Raman scattering [ 55 ] effects or different dielectric properties of the nucleation region and so polarizability of the Si–H modes leading to lower Raman scattering intensities. [ 25 ] In addition, a high amount of hydrogen in the nucleation layer can extend the band gap of the aSi:H. [ 56 ] This is detrimental to the absorption of the 532 nm laser and therefore to the resonance Raman effect maybe occurring at the a‐Si:H bulk material. [ 57 ]…”
Section: Discussionmentioning
confidence: 99%
“…Further possible effects are for instance interference enhanced Raman scattering [ 55 ] effects or different dielectric properties of the nucleation region and so polarizability of the Si–H modes leading to lower Raman scattering intensities. [ 25 ] In addition, a high amount of hydrogen in the nucleation layer can extend the band gap of the aSi:H. [ 56 ] This is detrimental to the absorption of the 532 nm laser and therefore to the resonance Raman effect maybe occurring at the a‐Si:H bulk material. [ 57 ]…”
Section: Discussionmentioning
confidence: 99%
“…[ 44 ] Surface roughness can strongly affect light scattering. [ 45 ] The complex refractive index or dielectric function tensor, which provides access to fundamental physical parameters, is related to various sample properties, including morphology, crystal quality, chemical composition, and electrical conductivity. [ 46 ] X‐ray diffraction (XRD)‐based characterization techniques, including conventional laboratory‐based XRD and synchrotron‐based grazing‐incidence wide‐angle X‐ray scattering (GIWAXS) (Figure 2c), are widely used to provide information on a material's crystallographic structure, phases, preferred crystal orientations, chemical composition, and other physical properties related to the crystallinity of the material.…”
Section: Perovskite Interface Properties and Characterizationsmentioning
confidence: 99%
“…In both cases, a transfer matrix approach uses spectra in ε and thickness of each layer assuming parallel interfaces to serve as input to simulate absorbance within each layer and reflectance from the device structure. The ARC simulations calculate reflectance by linearly connecting the minimum reflectance points obtained in the simulation, assuming planar interfaces 32 to approximate antireflection effects due to scattering at interfaces. In the ideal case, each photon absorbed within the perovskite photogenerates an electron-to-hole pair, which contributes to the maximal EQE and J SC .…”
Section: ■ Experimental Detailsmentioning
confidence: 99%