Amorphous carbon films as resist masks with high reactive ion etching resistance for nanometer lithography

Kakuchi, Masami; Hikita, Makoto; Tamamura, Toshiaki

doi:10.1063/1.96683

Cited by 53 publications

(14 citation statements)

References 7 publications

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“…Spencer et al (1976), Holland and Ojha (1976, Ojha and Holland (1977), Weissmantel (1979Weissmantel ( , 1982, Wada et al (1980), Bubenzer et al (1983), Vora and Moravec (1981), and Angus et al (1968Angus et al ( , 1984 were among the most active early workers. Their work led to an almost explosive growth of the field, which has been reviewed thoroughly in the last few years (Angus et al, 1986(Angus et al, , 1988(Angus et al, , 1989Phillips, ings over infrared optical components and solar cells, protective barrier layers for plasma fusion reactors, magnetic and optical disks (Angus et al, 1989), low distortion coatings for highfrequency sound (tweeters), resist masks for nanometer lithography (Kakuchi et al, 1988), etc. have been investigated.…”

Section: Introductionmentioning

confidence: 99%

“…It will also enable us to describe some of the desired properties of these films. In nanometer lithography, carbon films were utilized to yield patterns as small as 40 nm (Kakuchi et al, 1988) on thick silicon substrates. A dual-layer resist system comprising a film of a silicon-based negative resist (SNR) on top of a plasma-deposited carbon layer was used for patterning the substrate silicon.…”

Section: Introductionmentioning

confidence: 99%

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Plasma deposition and etching of diamond‐like carbon films

1991

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Plasma deposition and etching of diamond‐like carbon films

1991

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“…AFM studies on these carbon films suggest that they may be useful as smooth coatings or etch masks for nanometer patterning with intrinsic roughness smaller than 0.1 m. 26,27 Mass spectroscopy and optical emission spectroscopy studies indicated that significant concentrations of unsaturated hydrocarbon species ͑e.g., C 2 H 4 , C 3 H 4 , C 4 H 4 , and C 6 H 5 ͒ and hydrogen are formed.…”

Section: Discussionmentioning

confidence: 99%

Amorphous hydrogenated carbon film formation from benzene by electron cyclotron resonance chemical vapor deposition

Chen

Y²,

Hess

et al. 2000

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inInfluence of radio frequency power on thermal diffusivity of plasma enhanced chemical vapor deposition-grown hydrogenated amorphous carbon thin-films Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition Hydrogenated amorphous silicon carbide deposition using electron cyclotron resonance chemical vapor deposition under high microwave power and strong hydrogen dilution Structure of nitrogenated carbon films prepared from acetylene and nitrogen mixture in electron cyclotron resonance plasma Evaluation of the ion bombardment energy for growing diamondlike carbon films in an electron cyclotron resonance plasma enhanced chemical vapor deposition Amorphous hydrogenated carbon thin films have been deposited from benzene vapor in an electron cyclotron resonance plasma-enhanced chemical vapor deposition reactor. The effects of gas flow rate, pressure, and microwave power on deposition rates, chemical structure and composition, and on film density were investigated. Plasma enhanced dissociation and ionization reactions were monitored by mass spectrometry and by optical emission spectroscopy. Dissociation products included a variety of unsaturated hydrocarbon species ͑primarily ethylene͒ and hydrogen. Deposited films were characterized by Fourier transform infrared spectroscopy, Raman spectroscopy, and fluorescence spectroscopy. Films displayed a condensed, aromatic, hydrocarbon-like structure, albeit without extensive conjugation. Possible reaction sequences leading to the observed film structures have been proposed.

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“…Therefore, as the etch mask for the nanometer scale device processing, hard mask materials composed of a multi-layer resist structure are used as the etch mask for the processing of devices on a nanometer scale to increase the etch selectivity between the etch mask and the materials to be etched, such as contact SiO 2 , due to the difficulty in etching the materials directly using a single layer photoresist only. [6][7][8] Among the various hard mask materials, amorphous carbon layer (ACL) has been widely used due to the high etch selectivity over a photoresist and Si-based materials, easy deposition, and easy removal after the dry etch process. [9][10][11][12] However, the etching of ACL using conventional oxygen chemistry tends to show non-ideal etch profiles such as bowing, necking, taping, and increased top/bottom open CD ratio.…”

Section: Introductionmentioning

confidence: 99%

Etch Properties of Amorphous Carbon Material Using RF Pulsing in the O2/N2/CHF3 Plasma

Jeon¹,

Park²,

Yun³

et al. 2015

j nanosci nanotechnol

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The amorphous carbon layer (ACL), used as the hardmask for the etching of nanoscale semi-conductor materials, was etched using O2/CHF3 in addition to O2/N2 using pulsed dual-frequency capacitively coupled plasmas, and the effects of source power pulsing for different gas combinations on the characteristics of the plasmas and ACL etching were investigated. As the etch mask for ACL, a patterned SiON layer was used. The etch rates of ACL were decreased with the decrease of pulse duty percentage for both O2/N2 and O2/CHF3 due to decrease of the reactive radicals, such as F and O, with decreasing pulse duty percentage. In addition, at the same pulse duty percentage, the etch selectivity of ACL/SiON with O2/CHF3 was also significantly lower than that with O2/N2. However, the etch profiles of ACL with O2/CHF3 was more anisotropic and the etch profiles were further improved with decreasing the pulse duty percentage than those of ACL with O2/N2. The improved anisotropic etch profiles of ACL with decreasing pulse duty percentage for O2/CHF3 were believed to be related to the formation of a more effective passivation layer, such as a thick fluorocarbon layer, on the sidewall of the ACL during the etching with O2/CHF3, compared to the weak C-N passivation layer formed on the sidewall of ACL when using O2/N2.

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Amorphous carbon films as resist masks with high reactive ion etching resistance for nanometer lithography

Cited by 53 publications

References 7 publications

Plasma deposition and etching of diamond‐like carbon films

Plasma deposition and etching of diamond‐like carbon films

Amorphous hydrogenated carbon film formation from benzene by electron cyclotron resonance chemical vapor deposition

Etch Properties of Amorphous Carbon Material Using RF Pulsing in the O<SUB>2</SUB>/N<SUB>2</SUB>/CHF<SUB>3</SUB> Plasma

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