Amorphous and photoluminescent crystalline silicon carbide nanoparticles synthesized by laser ablation in liquids

Shuaib, E.P.; Yogesh, Gaurav Kumar; Sastikumar, D.

doi:10.1016/j.matpr.2020.08.453

Cited by 5 publications

(4 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The electronic band-gap (E g ) of the nanopowder was calculated by linear fitting of the Tauc plot, as seen in the inset graph. It suggests the band gap of the 3C − SiC nanopowder is 2.75 eV, which is consistent with previous reports [61][62][63].…”

Section: Materials Characterizationsupporting

confidence: 92%

All Screen Printed and Flexible Silicon Carbide NTC Thermistors for Temperature Sensing Applications

Wadhwa,

Benavides-Guerrero,

Gratuze

et al. 2024

Materials

View full text Add to dashboard Cite

In this study, Silicon Carbide (SiC) nanoparticle-based serigraphic printing inks were formulated to fabricate highly sensitive and wide temperature range printed thermistors. Inter-digitated electrodes (IDEs) were screen printed onto Kapton® substrate using commercially avaiable silver ink. Thermistor inks with different weight ratios of SiC nanoparticles were printed atop the IDE structures to form fully printed thermistors. The thermistors were tested over a wide temperature range form 25 °C to 170 °C, exhibiting excellent repeatability and stability over 15 h of continuous operation. Optimal device performance was achieved with 30 wt.% SiC-polyimide ink. We report highly sensitive devices with a TCR of −0.556%/°C, a thermal coefficient of 502 K (β-index) and an activation energy of 0.08 eV. Further, the thermistor demonstrates an accuracy of ±1.35 °C, which is well within the range offered by commercially available high sensitivity thermistors. SiC thermistors exhibit a small 6.5% drift due to changes in relative humidity between 10 and 90%RH and a 4.2% drift in baseline resistance after 100 cycles of aggressive bend testing at a 40° angle. The use of commercially available low-cost materials, simplicity of design and fabrication techniques coupled with the chemical inertness of the Kapton® substrate and SiC nanoparticles paves the way to use all-printed SiC thermistors towards a wide range of applications where temperature monitoring is vital for optimal system performance.

show abstract

Section: Materials Characterizationsupporting

confidence: 92%

All Screen Printed and Flexible Silicon Carbide NTC Thermistors for Temperature Sensing Applications

Wadhwa,

Benavides-Guerrero,

Gratuze

et al. 2024

Materials

View full text Add to dashboard Cite

show abstract

“…The electronic band gap (E g ) of the nano powder is calculated by liner fitting of the Tauc plot as seen in the inset graph. It suggests the band gap of the 3C − SiC nano powder is 2.75 eV which is consistent with previous reports [62][63][64].…”

Section: Materials Characterizationsupporting

confidence: 92%

All Screen Printed and Flexible Silicon Carbide NTC Thermistors for Temperature Sensing Applications

Wadhwa,

Guerrero,

Gratuze

et al. 2024

Preprint

View full text Add to dashboard Cite

In this study, Silicon Carbide (SiC) nano-particle based serigraphic printing inks were formulated to fabricate highly sensitive and wide temperature range SiC printed thermistors. Initially, commercial silver ink was screen printed to fabricate inter-digitated electrodes (IDE’s) onto flexible Kapton® substrate via screen printing. Thermistor inks with different weight ratios of SiC nano- particles dispersed in polyimide resin matrix were fabricated. The SiC-polyimide temperature sensing inks were screen printed atop the IDE structures to form fully printed thermistors and encapsulated with a adhesive backed polyimide film for humidity inhibition. The high temperature tolerance of the Kapton® allowed the the sensors to be tested over a wide temperature range form 25◦C to 170◦C. The printed SiC thermistors exhibit excellent repeatability and stability over 15 hours of continuous operation. Optimal device performance was achieved with 30 wt.% SiC-polyimide ink. We report highly sensitive devices with a temperature coefficient of Resistance (TCR) of -0.556 %/◦C, a thermal coefficient of 502 K (β-index) and an activation energy of 0.08 eV which are comparable with printed thermistors previous reported. Further, the thermistor demonstrates an accuracy of ±1.35◦C which is well within the range offered by commercially available high sensitivity thermistors. SiC thermistors exhibit a small 6.5% drift due to changes in relative humidity between 10-90 %RH and a 4.2 % drift in baseline resistance after 100 cycles of aggressive bend testing at a 40°angle. The use of commercially available low cost materials, simplicity of design and fabrication techniques coupled with the chemical inertness of the Kapton® substrate and SiC nanoparticles paves the way to use all-printed SiC thermistors towards a wide range of applications where temperature monitoring is vital for optimal system performance.

show abstract

“…In [60], amorphous and crystalline SiC nanoparticles were synthesized by laser ablation (wavelength 1064 nm) of microsized SiC powder in water and ethanol. The analysis showed the amorphous nature of SiC nanoparticles with an average particle size of 44 nm in water and crystalline nature of 6H-SiC nanoparticles with an average particle size of 18 nm in ethanol.…”

Section: Silicon Carbide Synthesis Methodsmentioning

confidence: 99%

Synthesis and Properties of Silicon Carbide (Review)

Soltys

Mironyuk

Mykytyn

et al. 2023

Phys. Chem. Solid St.

View full text Add to dashboard Cite

Silicon carbide is an extremely hard material that exhibits exceptional corrosion resistance as well as thermal shock resistance. Its high mechanical properties determine the increased performance of materials based on it. The combination of high thermal conductivity and low thermal expansion coefficient determines the stability of silicon carbide at high heating rates and under stationary thermal conditions. To date, significant progress has been made in the development of methods for the synthesis of various materials based on silicon carbide. The main synthesis methods that scientists use in their research are the sol-gel method, sintering, pyrolysis, microwave synthesis, chemical vapor deposition, etc. The use of "green" techniques in the synthesis of SiC has gained wide popularity due to environmental friendliness, renewability, and ease of implementation. This review analyzes modern research in the field of silicon carbide synthesis published in peer-reviewed professional journals.

show abstract

Amorphous and photoluminescent crystalline silicon carbide nanoparticles synthesized by laser ablation in liquids

Cited by 5 publications

References 24 publications

All Screen Printed and Flexible Silicon Carbide NTC Thermistors for Temperature Sensing Applications

All Screen Printed and Flexible Silicon Carbide NTC Thermistors for Temperature Sensing Applications

All Screen Printed and Flexible Silicon Carbide NTC Thermistors for Temperature Sensing Applications

Synthesis and Properties of Silicon Carbide (Review)

Contact Info

Product

Resources

About