Amorphous and microcrystalline silicon by hot wire chemical vapor deposition

Heintze, M.; Zedlitz, R.; Wanka, H.N.; Schubert, M.B.

doi:10.1063/1.361100

Cited by 86 publications

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“…The drastic decrease in H content with increasing substrate temperature has been reproduced in several other studies, 64,71 but Feenstra et al found film properties improving with increasing substrate temperature while the H content remained high ͑9.5 at. %͒ up to 430°C.…”

supporting

confidence: 55%

“…These films showed only a slightly improved stability. 71 Also the observation by Mahan et al 20 that both E Tauc and d remained constant when going to films with a low H concentration is remarkable. This behavior is in contrast with the observations for ETP deposited a-Si:H, but also with the observations for HWCVD a-Si:H films reported by Nelson et al 64 and Heintze et al 71 Mahan et al has attributed the fact that E Tauc remained constant at a relatively high value when going to low H concentrations to improved structural ordering in the HWCVD films.…”

mentioning

confidence: 99%

“…71 Also the observation by Mahan et al 20 that both E Tauc and d remained constant when going to films with a low H concentration is remarkable. This behavior is in contrast with the observations for ETP deposited a-Si:H, but also with the observations for HWCVD a-Si:H films reported by Nelson et al 64 and Heintze et al 71 Mahan et al has attributed the fact that E Tauc remained constant at a relatively high value when going to low H concentrations to improved structural ordering in the HWCVD films. 20,27 Regarding the improved structural ordering in low H content HWCVD a-Si:H, 20,27 there might be some similarities with the ETP deposited a-Si:H. Although speculative, the higher hole drift mobility in the ETP material as well as the appearance of a steep edge in the band tail states 31 might suggest also a different network bonding, while the enhanced hole drift mobility might be related with the relatively large ambipolar diffusion length in the low H content HWCVD a-Si:H films.…”

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confidence: 99%

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Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar–H2–SiH4 plasma

Kessels

Severens

Smets

et al. 2001

Journal of Applied Physics

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The properties of hydrogenated amorphous silicon (a-Si:H) deposited at very high growth rates (6–80 nm/s) by means of a remote Ar–H2–SiH4 plasma have been investigated as a function of the H2 flow in the Ar–H2 operated plasma source. Both the structural and optoelectronic properties of the films improve with increasing H2 flow, and a-Si:H suitable for the application in solar cells has been obtained at deposition rates of 10 nm/s for high H2 flows and a substrate temperature of 400 °C. The “optimized” material has a hole drift mobility which is about a factor of 10 higher than for standard a-Si:H. The electron drift mobility, however, is slightly lower than for standard a-Si:H. Furthermore, preliminary results on solar cells with intrinsic a-Si:H deposited at 7 nm/s are presented. Relating the film properties to the SiH4 dissociation reactions reveals that optimum film quality is obtained for conditions where H from the plasma source governs SiH4 dissociation and where SiH3 contributes dominantly to film growth. Conditions where ion-induced dissociation reactions of SiH4 prevail and where the contribution of SiH3 to film growth is much smaller lead to inferior film properties. A large contribution of very reactive (poly)silane radicals is suggested as the reason for this inferior film quality. Furthermore, a comparison with film properties and process conditions of other a-Si:H deposition techniques is presented.

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confidence: 55%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar–H2–SiH4 plasma

Kessels

Severens

Smets

et al. 2001

Journal of Applied Physics

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“…This result is contrary to the general observation during the typical HWCVD process. In general, the deposition rate of Si films is increased with increasing wire temperature in the HWCVD process (Heintze et al 1996;Gogoi et al 2011) because the decomposition efficiency of the reactants increases with increasing wire temperature. Such a difference in the dependence of the wire temperature on deposition is believed to come from the difference in the reactor pressure; the working pressure is less than 0.5 torr in the general HWCVD process whereas it is 1.5 torr in the current experiment.…”

Section: Resultsmentioning

confidence: 99%

In-SituMeasurements of Charged Nanoparticles Generated During Hot Wire Chemical Vapor Deposition of Silicon Using Particle Beam Mass Spectrometer

Hong

Kim

Yoo

et al. 2013

Aerosol Science and Technology

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It has been experimentally confirmed in many chemical vapor deposition (CVD) processes that charged nanoparticles tend to be generated in the gas phase. In an effort to confirm and measure charged gas phase nuclei, that might be generated during the deposition of Si thin films by hot wire CVD, we performed an in-situ measurement using particle beam mass spectrometer (PBMS), which can measure a size distribution of nanoparticles at low pressure. The size distribution of positively and negatively charged Si gas phase nuclei generated during hot wire CVD under 1.5 torr could be firstly measured. The particle diameter at the peak of the size distribution is about 10 ∼ 13 nm. At a wire temperature of 1800• C, the number concentration of negatively charged Si nanoparticles was higher than that of positively charged ones. The size and number concentration of charged nanoparticles decreased with increasing wire temperature from 1800 to 2000• C and increased with increasing SiH 4 concentration from 3 to 6%.

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“…Teknik baru yang dikembangkan beberapa tahun terakhir ini adalah teknik Hot Wire Chemical Vapor Deposition (Hot Wire CVD), yaitu metode CVD yang dibantu dengan filamen panas [3][4][5][6][7]. Dengan teknik baru ini, Lapisan tipis yang dihasilkan mempunyai kualitas yang relatif lebih baik akibat dekomposisi silan pada permukaan filamen panas [8,9].…”

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Studi Optimasi Parameter Daya RF untuk Penumbuhan Lapisan Tipis Mikrokristal Silikon dengan Metode Hot Wire Cell PECVD

2005

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Abstrak. Metode Hot Wire Cell PECVD (Plasma Enhanced Chemical Vapor Deposition) telah berhasil dikembangkan untuk menumbuhkan lapisan tipis amorf silikon terhidrogenasi (a-Si:H) dengan konduktivitas yang relatif tinggi. Lapisan tipis a-Si:H ditumbuhkan di atas gelas corning 7059 pada temperatur filamen 800 o C. Gas silan (SiH 4 ) 10 % dalam gas hidrogen (H 2 ) digunakan sebagai sumber gas. Dalam metode hot wire cell PECVD, gas reaktan didekomposisi dengan filamen tungsten panas yang diletakkan diluar kedua elektroda dan paralel dengan system gas masukan. Dari hasil karakterisasi diperoleh bahwa laju deposisi meningkat dari 0,89 Å/s sampai 1,90 Å/s dengan meningkatnya daya rf dari 60 watt sampai 120 watt. Celah pita optik menurun dari 1,68 eV sampai 1,56 eV dengan meningkatnya daya rf dari 60 watt sampai 120 watt. Dari hasil foto SEM dan spektrum XRD memperlihatkan adanya transisi amorf ke mikrokristal pada daya rf 120 watt. Transisi amorf ke mikrokristal ditandai dengan berkurangnya fasa amorf dan adanya puncak difraksi pada orientasi kristal istimewa <111>. Konduktivitas gelap dan terang lapisan tipis µc-Si:H yang diperoleh sebesar 6,84x10 -6 S cm -1 dan 4,16x10 -4 S cm -1 . Abstract. The Hot Wire Cell PECVD method has been developed and successfully applied to grow the hydrogenated amorphous silicon (a-Si:H) thin films with a relatively high conductivity. The a-Si:H thin films were grown on the 7059 corning glass at a filament temperature of 800 o C. Ten percents silane (SiH 4 ) gas diluted in hydrogen (H 2 ) gas was used as gas source. In the hot wire cell PECVD method, reactant gases are decomposed as a result of reaction with a heated filament. The filament was placed parallelly with inlet gas system and outside of electrodes. The characterization results exhibited that the deposition rate increased from 1.02 Å/s to 1.90 Å/s with increasing the rf power from 80 watt to 120 watt. The optical bandgap decreased from 1.65 eV to 1.56 eV with increasing the rf power from 80 watt to 120 watt. The SEM image and the XRD

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Amorphous and microcrystalline silicon by hot wire chemical vapor deposition

Cited by 86 publications

References 0 publications

Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar–H2–SiH4 plasma

Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar–H2–SiH4 plasma

In-SituMeasurements of Charged Nanoparticles Generated During Hot Wire Chemical Vapor Deposition of Silicon Using Particle Beam Mass Spectrometer

Studi Optimasi Parameter Daya RF untuk Penumbuhan Lapisan Tipis Mikrokristal Silikon dengan Metode Hot Wire Cell PECVD

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