Amorphous and crystalline IrSi Schottky barriers on silicon

Wörle, D.; Grünleitner, H.; Demuth, Volker; Kumpf, Christian; Strunk, H. P.; Burkel, E.; Schulz, M.

doi:10.1007/s003390050724

Cited by 10 publications

(19 citation statements)

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“…The thickness of the Ir layer is about 12 nm. Similar studies of a thin IrSi x layer formed below 500 • C were reported [5,11]. The Ir/IrSi x and IrSi x /Si interfaces are smooth.…”

Section: Tem Analysissupporting

confidence: 56%

“…The Ir-Si phases are formed when Ir is deposited on Si and silicided by subsequent annealing [5]. Petersson et al [6] reported that at annealing temperatures: 400-600 • C, 500-950 • C and 1000 • C IrSi, IrSi 1.75 and IrSi 3 phases were formed, respectively.…”

Section: Introductionmentioning

confidence: 98%

“…The differences in Schottky barrier heights depend on phase composition and microstructures of the Ir-Si system [5,[9][10][11]. TEM investigation is very important for technology optimization and understanding the electrical performance of Schottky contact.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain

Łaszcz

Kątcki

Ratajczak

et al. 2004

Journal of Alloys and Compounds

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“…The thickness of the Ir layer is about 12 nm. Similar studies of a thin IrSi x layer formed below 500 • C were reported [5,11]. The Ir/IrSi x and IrSi x /Si interfaces are smooth.…”

Section: Tem Analysissupporting

confidence: 56%

Section: Introductionmentioning

confidence: 98%

See 1 more Smart Citation

Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain

Łaszcz

Kątcki

Ratajczak

et al. 2004

Journal of Alloys and Compounds

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“…For further improvement of infrared Schottky barrier detectors, iridium silicides are promising materials having Schottky barriers below 200 meV [2,[4][5][6]. Several investigations in the past have shown that Schottky barriers down to 120 meV can be realised by the various phases of iridium silicides.…”

Section: Introductionmentioning

confidence: 99%

“…Ir 3 Si 4 can only be fabricated under ultra high vacuum (UHV) conditions using in situ silicidation at 475 C [8]. The iridium monosilicide phase shows two different morphological structures depending on the initial iridium film thickness and accordingly on the resulting film thickness after silicidation at 500 C [6]. Below a critical film thickness of 4 nm, IrSi films show a homogeneous morphology, for which no evidence of a crystalline structure could be observed in cross section HR-TEM images [6,9].…”

Section: Introductionmentioning

confidence: 99%

Resistivity of Ultrathin (0.6-3.7 nm) IrSi Films on Si(100)

Grünleitner

Semmelroth

Schulz

2001

phys. stat. sol. (a)

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Subject classification: 73.30.+y; 73.50.Dn; 73.61.Jc; S1.61 Ultrathin (0.6-3.7 nm) IrSi films are fabricated by electron beam evaporation of iridium metal onto n-type silicon (100) substrates and subsequent silicide formation at 500 C. The sheet resistivity is measured at various temperatures in the range from 15 to 300 K. The polycrystalline c-IrSi films which form for a film thickness in excess of 8 nm show a metal-like behaviour of the resistivity. Ultrathin IrSi films of thickness less than 4 nm show an anomalous resistivity that increases with decreasing temperature. The exponential law observed for the resistivity is found to be consistent with hopping transport in amorphous IrSi predicted by the structure analysis for the thin films.

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Electron spectroscopic studies of iron and iridium silicides

Probst

Denecke

Whelan

et al. 2002

Surface & Interface Analysis

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The formation of iron and iridium silicides was studied by means of highly resolved photoelectron spectroscopy of core and valence levels as well as by means of low-energy electron diffraction (LEED). The experiments were carried out at BESSY II in Berlin using synchrotron radiation for the photoemission studies. After evaporation of seven monolayers of Fe on Si(111) at room temperature and annealing to 410 K for 420 s, an ordering of the surface structure and the formation of an (1×1) LEED pattern is observed. Upon further heating to 500 K a strong change in both UPS and XPS spectra occurs. This behaviour is attributed to the formation of FeSi x (1 ≤ x ≤ 2). After annealing of a thin Ir layer on Si(100) to 1130 K, a p(2 × 2) LEED pattern with respect to the silicon substrate is observed, which indicates the formation of a well-ordered surface compound. Comparison with the literature shows that the formation of an IrSi species is well known, but only an amorphous and a polycrystalline modification have been described upto now.

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Amorphous and crystalline IrSi Schottky barriers on silicon

Cited by 10 publications

References 1 publication

Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain

Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain

Resistivity of Ultrathin (0.6-3.7 nm) IrSi Films on Si(100)

Electron spectroscopic studies of iron and iridium silicides

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