Amorphization of Garnet by Ion Implantation

Abstract

Amorphization by ion implantation has been investigated in films of (SmYGdTm)3Ga0.4Fe4.6O12 garnet by transmission electron microscopy, incorporating a special cross-sectioning technique. These films were produced by liquid phase epitaxy on (111) garnet substrates and subsequently implanted with ions of deuterium at 60 keV and doses ranging from 0.50 to 4.5×1016 D2+/cm2 and ions of oxygen at 110 keV and doses ranging from 0.95 to 8.6×1014O+/cm2. The amorphization process proceeds in separate stages involving the formation of isolated amorphous regions, merging of these regions into a continuous band and subsequent propagation of the amorphous band toward the implanted surface. Details of these processes are interpreted in terms of various atomic displacement mechanisms.