Amorphization behaviors in polycrystalline alumina irradiated with energetic iodine ions

Ion-induced amorphization in ceramic materials

“…[17,[19][20][21][22][23][24][25] justified the validity of Eq. (3) in sapphire with the g and a(0) values typical for insulators.…”

“…At the highest fluence they found d am = 4.5 lm and an average surface step of z = 0.65 lm [22], which were related to the amorphization [17]. They estimated S ei % 4-5 keV/nm at the amorphous-crystalline phase boundary and took this value for S et [17,22].…”

“…The experiments of Aruga et al [17,22] showed that the investigations of the radiation resistance always must include experiments with high fluences, as well, since the study of the properties of single tracks may lead to incorrect predictions when track recrystallization is expected. Experiments in such conditions are highly important since the high fluence is an essential feature of any reactor applications.…”

Amorphization of sapphire induced by swift heavy ions: A two step process

“…In 2000, Aruga et al [7] observed by the TEM technique an amorphization until a depth of 4.5 lm after the irradiation of polycrystalline alumina with iodine ions at energy of 0.7 MeV/amu for a fluence larger than 10 14 ions/cm 2 with an electronic energy loss threshold in agreement with the prediction of the thermal spike model [24]. In this paper, we report on the appearance of a total disorder at the surface of a-Al 2 O 3 , associated to the amorphization as seen by Aruga et al [7] for large fluence of Xe ions at energy of 0.7 MeV/amu.…”

“…Because of the excellent physicochemical properties for many industrial applications (hardness, chemical insensitivity, refractory behaviour, transparency over a wide wavelength range) of Al 2 O 3 , many investigations have been performed modifying the microstructural [1][2][3][4][5][6][7], surface state [8][9][10] and optical properties [11][12][13][14][15][16] induced in aAl 2 O 3 by ion irradiation in the electronic energy loss regime. These modifications result from complex interactions involving the slowing down process of the incident ions that induces defect creation and structural transformations in the host matrix [17].…”