Amorphisation and surface morphology development at low-energy ion milling

Barna, Á.; Pécz, B.; Menyhárd, M.

doi:10.1016/s0304-3991(97)00120-4

Cited by 115 publications

(58 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A recently developed trial and error method was used to calculate the original concentration distribution from the measured depth profile. 16,17 This method supposes that the majority of the ion induced alteration is due to ballistic mixing ͑which assumption is satisfied for this case, since the other important distorting process the surface roughening results in less than 1 nm rms roughness using the earlier sputtering parameters͒, 18 which is properly described by TRIM simulation. 17,19 The method also considers the intrinsic interface roughness or waviness by a Gaussian broadening.…”

mentioning

confidence: 99%

Interdiffusion in amorphous Si/Ge multilayers by Auger depth profiling technique

Csík

Langer

Beke

et al. 2001

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

It has been shown by the Auger depth profiling technique that the concentration profile at the initially sharp Si/Ge interface in amorphous Si/Ge multilayers shifted but remained still sharp after a heat treatment at 680 K for 100 h. At the same time the fast diffusion of Si resulted in the formation of an almost homogeneous Ge͑Si͒ amorphous solid solution, while there was practically no diffusion of Ge into the Si layer. This is direct evidence on the strong concentration dependence of the interdiffusion coefficient in amorphous Si/Ge system, and it is in accordance with the previous indirect result obtained from the measurements of the decay of the small angle Bragg peaks, as well as with finite difference simulations. © 2001 American Institute of Physics. ͓DOI: 10.1063/1.1331330͔Changes in atomic structures of amorphous semiconductors and their relationships to physical properties are currently of interest due to their useful optical and electronic features.1,2 Since most structural changes are related to atomic diffusion, any real understanding of the structural transformation, homogenization, etc., must be based on the knowledge of the diffusion processes. The study of diffusion in amorphous materials includes some difficulties. One of the main problems is related to the thermal stability of the amorphous phase; the diffusional measurements should be carried out at low temperatures for very short diffusion times in order to avoid structural changes due, e.g., to structural relaxation. Additionally, in amorphous semiconductors the mechanism of diffusion is also not fully understood.3-5 Thus, for example factors controlling the details of diffusional homogenization in amorphous Si/Ge multilayers are still under discussion. First of all the diffusional asymmetry ͑manifested in the strong concentration dependence of the interdiffusion coefficients͒, 6 the significant pore formation during the diffusional mixing, 7 and the possible role of diffusional stresses 8 are the most important factors indicating the need of a better understanding of the previous process.In this article interdiffusion in amorphous Si-Ge multilayered specimens is studied by Auger depth profiling. The primary objective of the present investigation is to observe the predicted asymmetric change of composition caused by the strong concentration dependence of the diffusion coefficients. Experimental results, obtained from small angle x-ray diffraction ͑SAXRD͒ measurements at different average compositions indicated a strong concentration dependence of the chemical diffusion parameters.9,10 Although such a strong concentration dependence inevitably should lead to a significant curvature on the ln(I/I 0 ) ͑I/I 0 is the normalized height of the first order SAXRD peak͒ versus time plots 11 ͑and to oscillatory behavior of the higher order peaks͒, later on the experimentally observed curvature was rather attributed by the same group to the effects of structural relaxation and coupling back effects of stresses of diffusional origin were also excluded....

show abstract

mentioning

confidence: 99%

Interdiffusion in amorphous Si/Ge multilayers by Auger depth profiling technique

Csík

Langer

Beke

et al. 2001

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…3(a), area (1)) with epitaxial relations: hR6-CaSi2[100]||Si [1][2][3][4][5][6][7][8][9][10] and hR6-CaSi2(001)||Si(111). The identification of the SA FFT pattern for area (1) results in the un-defective CaSi2 layer growth on Si(111)7x7 surface without stacking faults in 3-4 unit cell thickness.…”

Section: Resultsmentioning

confidence: 99%

“…For the TEM study, the specimens were thinned by special procedure, which was explained in previous article [8], involving cutting with a diamond saw, embedding the pieces into a special titanium disk, mechanical grinding and polishing, and finally ion beam milling. Ar + ions of 10 keV energy were used until perforation, followed by low-energy (3 keV) milling to minimize surface damage.…”

Section: Methodsmentioning

confidence: 99%

Epitaxial relations, crystalline structure and defects in the double Si(111)/hR6 CaSi₂/Si(111) heterostructures

Галкин¹,

Dotsenko²,

Galkin³

et al. 2017

Proc. Asia-Pacific Conf. On Semiconducting Silicides and Related Materials 2016

Self Cite

View full text Add to dashboard Cite

The morphology and crystalline structure of Si(111)/CaSi2/Si(111) double heterostructures (DHS) formed by the Ca reactive deposition epitaxy on the Si(111)7x7 surface and Si overgrowth at 500 o C have been studied by atomic force microscopy and transmission electron microscopy. It was established that stressed CaSi2 layers with stacking faults in (001)CaSi2 plane and {111}-twinned epitaxial or polycrystalline Si layers were grown. Epitaxial Si layers while had orientation parallel to the Si(111) substrate surface. CaSi2[100]||Si[1-10] and CaSi2(001)||Si(111) epitaxial relations were conserved for all grown DHS and they did not depend from the silicon growth mode: molecular beam epitaxy (MBE) or solid phase epitaxy (SPE). The CaSi2 layer in (001)CaSi2 plane has a hR6 modification and parameters: a=0.393±0.002 nm; c=3.09±0.18 nm at SPE Si growth mode. But some another parameters: a=0.382±0.002 nm; c=3.09 ±0.18 nm were observed at MBE Si growth mode. The compression in c parameter on near 1.07-1.14% as compared with c-value (3.06 nm) for tabular CaSi2 data is established fact for both HDS. The observed differences in a parameter +1.85% (at SPE mode) and -1.08% (at MBE mode) is not clear now, and demands additional experiments. Some assumptions about mechanisms of occurrence and distribution of compressions and stretching in the CaSi2 lattice were made.

show abstract

“…Formation of amorphous layer is materials-dependent; semiconductor and ceramic materials easily amorphize when compared with metals (Huh et al, 2013). Decreasing the energy and the incident angle of the incoming ions can reduce the effect (Barna et al, 1998).…”

Section: Introductionmentioning

confidence: 99%

A Small Spot, Inert Gas, Ion Milling Process as a Complementary Technique to Focused Ion Beam Specimen Preparation

et al. 2017

View full text Add to dashboard Cite

This paper reports on the substantial improvement of specimen quality by use of a low voltage (0.05 to~1 keV), small diameter (~1 μm), argon ion beam following initial preparation using conventional broad-beam ion milling or focused ion beam. The specimens show significant reductions in the amorphous layer thickness and implanted artifacts. The targeted ion milling controls the specimen thickness according to the needs of advanced aberration-corrected and/or analytical transmission electron microscopy applications.

show abstract

Amorphisation and surface morphology development at low-energy ion milling

Cited by 115 publications

References 16 publications

Interdiffusion in amorphous Si/Ge multilayers by Auger depth profiling technique

Interdiffusion in amorphous Si/Ge multilayers by Auger depth profiling technique

Epitaxial relations, crystalline structure and defects in the double Si(111)/hR6 CaSi₂/Si(111) heterostructures

A Small Spot, Inert Gas, Ion Milling Process as a Complementary Technique to Focused Ion Beam Specimen Preparation

Contact Info

Product

Resources

About

Amorphisation and surface morphology development at low-energy ion milling

Cited by 115 publications

References 16 publications

Interdiffusion in amorphous Si/Ge multilayers by Auger depth profiling technique

Interdiffusion in amorphous Si/Ge multilayers by Auger depth profiling technique

Epitaxial relations, crystalline structure and defects in the double Si(111)/hR6 CaSi2/Si(111) heterostructures

A Small Spot, Inert Gas, Ion Milling Process as a Complementary Technique to Focused Ion Beam Specimen Preparation

Contact Info

Product

Resources

About

Epitaxial relations, crystalline structure and defects in the double Si(111)/hR6 CaSi₂/Si(111) heterostructures