Ammonia Sensing Properties of a Pt/AlGaN/GaN Schottky Diode

Chen, Tai-You; Chen, Huey-Ing; Liu, Yi-Jung; Huang, Chien-Chang; Hsu, Chia-Wen; Chang, Che-Wei; Liu, Wen‐Chau

doi:10.1109/ted.2011.2115245

Cited by 31 publications

(18 citation statements)

References 24 publications

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“…An important sensor parameter is the magnitude of sensing signal variation, ΔI = IH2S-I0. Previously reported gas sensors based on Pt-AlGaN/GaN Schottky diodes showed very high sensitivities, in the order of 10 3 % at ppm level gas concentrations, however signal variation was in the nA range, due to low baseline signal values [7]. Low ΔI will result in higher noise susceptibility of the sensor and higher limit of detection.…”

Section: Resultsmentioning

confidence: 95%

Pt-AlGaN/GaN HEMT-Sensor for Hydrogen Sulfide (H2S) Detection

Sokolovskij

Iervolino

Zhao

et al. 2017

Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017

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AlGaN/GaN high electron mobility transistor (HEMT)-sensor with a catalytic Pt-gate is fabricated and tested for toxic H2S gas detection. AlGaN/GaN was chosen to extend the sensor detection range and to be able to operate at temperatures beyond those allowed by state-of-art Si-FET sensors. Testing was performed using a gas mixing apparatus in dry synthetic air ambient. High sensitivity, ΔI/I0, 8% for 80 ppm and 0.23% for 0.5 ppm H2S/air, is achieved at a temperature of 250 °C, with a corresponding ΔI of 617 μA and 18 μA, respectively, indicating suitability of the proposed sensor for industrial gas safety detectors.

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Section: Resultsmentioning

confidence: 95%

Pt-AlGaN/GaN HEMT-Sensor for Hydrogen Sulfide (H2S) Detection

Sokolovskij

Iervolino

Zhao

et al. 2017

Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017

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“…When acetone and ammonia gas is exposed on Pt coating on the InN sensor. They are adsorbed on the adsorption sites and further dissociated into hydrogen atom at platinum catalytic film [ 72 , 73 , 74 , 75 , 76 ]. In addition, part of the dissociated hydrogen atom diffuses and are trapped at the interface of Pt–InN epilayer to form the dipole layer at the interface [ 77 ].…”

Section: Ultrathin Inn Gas Sensormentioning

confidence: 99%

Indium Nitrite (InN)-Based Ultrasensitive and Selective Ammonia Sensor Using an External Silicone Oil Filter for Medical Application

Kumar

Kao

Gwo

et al. 2018

Sensors

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Ammonia is an essential biomarker for noninvasive diagnosis of liver malfunction. Therefore, selective detection of ammonia is essential for medical application. Here, we demonstrate a portable device to selectively detect sub-ppm ammonia gas. The presented gas sensor is composed of a Pt coating on top of an ultrathin Indium nitrite (InN) epilayer with a lower detection limit of 0.2 ppm, at operating temperature of 200 °C, and detection time of 1 min. The sensor connected with the external filter of nonpolar 500 CS silicone oil to diagnose liver malfunction. The absorption of 0.7 ppm acetone and 0.4 ppm ammonia gas in 10 cc silicone oil is 80% (0.56 ppm) and 21.11% (0.084 ppm), respectively, with a flow rate of 10 cc/min at 25 °C. The absorption of acetone gas is 6.66-fold higher as compared to ammonia gas. The percentage variation in response for 0.7 ppm ammonia and 0.7 ppm acetone with and without silicone oil on InN sensor is 17.5% and 4%, and 22.5%, and 14% respectively. Furthermore, the percentage variation in response for 0.7 ppm ammonia gas with silicone oil on InN sensor is 4.3-fold higher than that of 0.7 ppm acetone. The results show that the InN sensor is suitable for diagnosis of liver malfunction.

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“…Another Pt-AlGaN/GaN sensor showed 5.5% of sensitivity while it had a high current change of 1.801 mA and a high base current of 33 mA [ 22 ]. On the other hand, a NH 3 gas sensor archived an ultra-high sensitivity of 18,300% at 150 °C, but the base current was limited in the pA range [ 25 ].…”

Section: Introductionmentioning

confidence: 99%

Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation

Nguyễn

Kim

2021

Micromachines

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We investigated the sensing characteristics of NO2 gas sensors based on Pd-AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures. In this paper, we demonstrated the optimization of the sensing performance by the gate bias, which exhibited the advantage of the FET-type sensors compared to the diode-type ones. When the sensor was biased near the threshold voltage, the electron density in the channel showed a relatively larger change with a response to the gas exposure and demonstrated a significant improvement in the sensitivity. At 300 °C under 100 ppm concentration, the sensor’s sensitivities were 26.7% and 91.6%, while the response times were 32 and 9 s at VG = 0 V and VG = −1 V, respectively. The sensor demonstrated the stable repeatability regardless of the gate voltage at a high temperature.

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Ammonia Sensing Properties of a Pt/AlGaN/GaN Schottky Diode

Cited by 31 publications

References 24 publications

Pt-AlGaN/GaN HEMT-Sensor for Hydrogen Sulfide (H2S) Detection

Pt-AlGaN/GaN HEMT-Sensor for Hydrogen Sulfide (H2S) Detection

Indium Nitrite (InN)-Based Ultrasensitive and Selective Ammonia Sensor Using an External Silicone Oil Filter for Medical Application

Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation

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