Ammonia sensing characteristics of a Pt/AlGaN/GaN Schottky diode

Chen, Tai You; Chen, Huey Ing; Liu, Yi Jung; Huang, Chien Chang; Hsu, Chi Shiang; Chang, Chih-Kai; Liu, Wen Chau

doi:10.1016/j.snb.2010.11.022

Cited by 34 publications

(26 citation statements)

References 24 publications

(34 reference statements)

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“…I N RECENT years, ammonia has been widely used in the field of chemical industries, agricultures and medical applications [1], [2]. Ammonia is a compound of nitrogen and hydrogen, and it shows characteristics of colorless, pungent smell, and explosive property at a high-concentration ammonia atmosphere [3]- [5].…”

Section: Introductionmentioning

confidence: 99%

On the Ammonia Gas Sensing Performance of a RF Sputtered NiO Thin-Film Sensor

et al. 2015

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An interesting ammonia gas sensor based on a p-type NiO thin film, prepared by a radio frequency sputtering process, is studied and demonstrated. As compared with conventional n-type metal-oxide sensors, the studied device shows comparable and good sensing performance, including a high-sensing response ratio of 289%, a lower response time of 31 s, and a lower recovery time of 78 s, under an introduced 1000 ppm NH 3 /air gas at 250°C and 350°C, respectively. In addition, the studied sensor device exhibits a lower detection limit (<5 ppm NH 3 /air) at 250°C. Consequently, based on these advantages and inherent benefits of low cost, chemical stability, and easy fabrication, etc., the studied NiO thin-film sensor shows the promise for high-performance ammonia gas sensing applications.

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Section: Introductionmentioning

confidence: 99%

On the Ammonia Gas Sensing Performance of a RF Sputtered NiO Thin-Film Sensor

et al. 2015

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“…This again shows the diode current decreases upon exposure to ammonia, which is opposite to the change when detecting reducing gases like hydrogen. 33,34,39,40 For hydrogen detection, we observe the detection mechanism involves an increase in positive charge at the heterointerface that creates the two-dimensional electron gas (2DEG). 33,34,[38][39][40] The charges in the 2DEG at the AlGaN/GaN interface are induced by spontaneous and piezoelectric polarization, which are balanced with positive charges on the surface.…”

Section: Methodsmentioning

confidence: 99%

“…30 AlGaN/GaN high electron mobility transistors (HEMTs) and Schottky diode sensors can also provide an attractive platform for gas sensing. [33][34][35][36][37][38][39][40][41][42][43][44] When functionalized with either Pt 35,39,40 or ZnO nanorods 42 in the gate region, these structures are capable of ammonia detection at low concentrations (0.1-2 ppm) in the temperature range 25-300 • C for oxide functionalization 42 and up to 600 • C with Pt functionalization. 35,39,40 These are typically targeted at automotive applications in response to increasingly strict emission standards.…”

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confidence: 99%

AlGaN/GaN Heterostructure Based Schottky Diode Sensors with ZnO Nanorods for Environmental Ammonia Monitoring Applications

Jung

Baik

Ren

et al. 2018

ECS J. Solid State Sci. Technol.

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AlGaN/GaN heterostructure Schottky diodes with ZnO nanorod functionalization are shown to be capable of detecting NH 3 balanced with air at a concentration of ∼0.3 ppm at 25 • C and ∼0.1ppm at 300 • C. The diodes show reproducible current response to repeated cycling of the NH 3 exposure at all temperatures in this range. The diode current at fixed voltage decreased upon exposure to the NH 3 , which is opposite to what occurs with exposure to hydrogen. This suggests the detection mechanism involves reaction of ammonia with oxygen species on the ZnO nanorods, increasing the negative charge on the interface with AlGaN. The detection sensitivity displayed an activation energy of 0.071 eV and increased monotonically with ammonia concentration at all temperatures, from 3.36% (25 • C) to 12.59% (300 • C) for 2 ppm at a voltage of 5 V. The diodes could detect ammonia for either polarity applied bias. The absolute current change and sensitivity upon exposure to ammonia increased with measurement temperature.

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“…GaN grown in various micro-/nano-structures in the form of bulk, thin films , NWs and nanotubes (NTs) have been reported [47][48][49][50]. Previous investigations related to H 2 sensing, proposed that GaN nanostructures are potential and very promising candidates [8,[51][52].…”

Section: Introductionmentioning

confidence: 99%