Ambipolarity Suppression of a Double Gate Tunnel FET using High-k Drain Dielectric Pocket

Panda, Sarat Kumar; Jena, Biswajit; Dash, Sidhartha

doi:10.1149/2162-8777/ac4d82

Cited by 11 publications

(5 citation statements)

References 40 publications

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“…Several effective engineering techniques have been implemented recently to suppress ambipolarity and increase the ON current of TFETs. [24][25][26] TFET with Si 1−x Ge x source has been acknowledged as a viable alternative in complementary digital circuits and low-power applications because of its improved I ON and better I ON /I Amb ratio. 24,25 In this paper, we have presented an n-type single gate TFET with a lower bandgap Si 0.6 Ge 0.4 source to improve the drain current.…”

mentioning

confidence: 99%

Implementing a Single Gate Heterostructure Tunnel FET as a Low-Power Photosensor with Improved Sensitivity

Panda¹,

Dash²

2022

ECS J. Solid State Sci. Technol.

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We investigated the effectiveness of a single gate SiGe/Si heterostructure tunnel field-effect transistor (TFET) as a photosensor in the visible spectrum. A transparent zinc oxide (ZnO) layer is used as the optical region over the channel for sensing the incident light. When light impinges on the gate catalyst and creates optical charge carriers in the illumination region, the conductance of the device considerably rises and, consequently, the subthreshold current changes. For the suggested photosensor, the effect of varying drain-to-source voltage, germanium mole fraction (x), and silicon film thickness (tsi) on the sensor performance are investigated. The sensor offers enhanced sensitivity performance as compared to the traditional TFET in terms of several optical figures of merit such as available photocurrent, responsivity, quantum efficiency, sensitivity, and SNR, and can therefore be utilized as an efficient photosensor. The reported sensor has a peak responsivity (R) of 2.23 A/W and quantum efficiency (η) of 7.31 at a wavelength (λ) of 450 nm.

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confidence: 99%

Implementing a Single Gate Heterostructure Tunnel FET as a Low-Power Photosensor with Improved Sensitivity

Panda¹,

Dash²

2022

ECS J. Solid State Sci. Technol.

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“…Due to its interband tunneling current transfer mechanism, the device has been getting attracted by researchers in the last decade [5]. Recently, structural modification and material selection are the critical parameters for developing TFET technology [6][7][8][9].…”

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confidence: 99%

Design and analysis of a double gate SiGe/Si tunnel FET with unique inner-gate engineering

Dash¹,

Mishra²

2022

Semicond. Sci. Technol.

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An inner-gate engineered double gate heterostructure TFET (SiGe/Si-IGTFET) has been presented. The inner-gate is grown at the center of the Si0.6Ge0.4/Si TFET, followed by a thin HfO2 dielectric layer. The drain current performance of the suggested device has been investigated comprehensively to discover its efficacy. The device provides much-lower ambipolarity (by 6-decades) compared to heterostructure TFET with a similar dimension. The SiGe/Si-IGTFET device has also shown higher immunity against short channel effects such as drain induced barrier lowering (DIBL) and gate induced drain leakage current (IGIDL). To examine the impact of inner-gate, various DC parameters such as ambipolar current (Iamb), on current (Ion), Ion/Iamb current ratio, average subthreshold swing (SS), surface potential, and electric field have been considered. The device offers a much improved current ratio (Ion/Iamb) of 1.78×1012 with an average SS of 23 mV/decade by optimizing the position and dielectric material of the inner-gate. The simulation of the suggested device is carried out using a 2-D Silvaco Technology Computer-Aided Design (TCAD) device simulator.

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“…Ambipolarity degrades device performance and is the current conduction for negative gate voltage at a constant positive drain voltage. Researchers have considered different methods to lessen ambipolarity, including work function modulation, 22 dielectric engineering, 23 spacer technology, 24 and gate-drain underlap approach. 25 These strategies offer a greater tunneling distance and a smaller electric field at the channel/drain (C/D) interface, due to which the ambipolar current reduces.…”

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confidence: 99%

Ambipolarity Sensitivity Investigation using a Charge-Plasma TFET with Graphene Channel for Biomolecule Detection

Dash,

Mishra

2024

ECS J. Solid State Sci. Technol.

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This research proposes a label-free detection of neutral and charged biomolecules using a graphene channel-based charge-plasma tunnel field-effect transistor (TFET). The presence of a graphene channel provides a greater tunneling barrier at the channel/drain interface, significantly reducing ambipolarity and increasing the current gradient in the ambipolar condition. A nanocavity is created underneath the drain metal to investigate the sensitivity. Here, the various analog sensitivity parameters of the suggested biosensor are evaluated for a few neutral biomolecules in the ambipolar condition, including gelatin, biotin, and 3-aminopropyl-triethoxysilane. The sensor's electrostatic performance, including its IDS-VGS characteristics, energy band, and tunneling distance, has been estimated in the ambipolar state. The sensitivity analysis is carried out in terms of ambipolar sensitivity, transconductance (Sgm), cut-off frequency sensitivity (Sft), and maximum frequency sensitivity (Sfm). Further research has been done to study the effects of deoxyribonucleic acid, a charged biomolecule (k = 6) with varied positive and negative charge densities, on various sensitivity parameters. The detailed simulation work for the designed biosensor is achieved using the 2D Silvaco ATLAS device simulation tool.

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Ambipolarity Suppression of a Double Gate Tunnel FET using High-k Drain Dielectric Pocket

Cited by 11 publications

References 40 publications

Implementing a Single Gate Heterostructure Tunnel FET as a Low-Power Photosensor with Improved Sensitivity

Implementing a Single Gate Heterostructure Tunnel FET as a Low-Power Photosensor with Improved Sensitivity

Design and analysis of a double gate SiGe/Si tunnel FET with unique inner-gate engineering

Ambipolarity Sensitivity Investigation using a Charge-Plasma TFET with Graphene Channel for Biomolecule Detection

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