Ambipolar operation of fullerene field-effect transistors by semiconductor/metal interface modification

Nishikawa, Takao; Kobayashi, Shin; Nakanowatari, Tomoyuki; Mitani, Tadaoki; Shimoda, Tatsuya; Kubozono, Yoshihiro; Yamamoto, Gakushi; Ishii, Hisao; Niwano, Michio; Iwasa, Yoshihiro

doi:10.1063/1.1903109

Cited by 50 publications

(21 citation statements)

References 28 publications

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“…However, this is consistent with the ambipolar transport reported for fullerene derivatives including PCBM. [9][10][11] The field-effect hole mobility of PCBM is reported to be 8 Â 10 À3 cm 2 V À1 s À1 , [11] which is much higher than the hole mobility of pristine MDMO-PPV ($10 À7 cm 2 V À1 s À1 ) [8,9] but rather comparable to that of MDMO-PPV/ PCBM blend films ($10 À4 cm 2 V À1 s À1 ). [8,9] Thus, our finding can explain previous reports [9] that the hole mobility in MDMO-PPV/PCBM blend films increased at higher PCBM concentrations (> 50 wt %).…”

Section: Charge Carriers Formed In Mdmo-ppv/pcbm Blendsmentioning

confidence: 99%

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Formation of Methanofullerene Cation in Bulk Heterojunction Polymer Solar Cells Studied by Transient Absorption Spectroscopy

Yamamoto

Guo

Ohkita

et al. 2008

Adv Funct Materials

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Photogenerated charge carriers for blend films of poly[2‐methoxy‐5‐(3,7‐dimethyloctyloxy)‐1,4‐phenylenevinylene] (MDMO‐PPV) and [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM) have been investigated by transient absorption spectroscopy. The blend film with a low PCBM fraction (<10 wt %) exhibits a wide absorption that ranges from 900 to 1000 nm, which is characteristic of the MDMO‐PPV hole polaron and PCBM radical anion. On the other hand, the blend film with a higher PCBM fraction (> 30 wt %) exhibits a major absorption band at ∼900 nm, which is characteristic of the PCBM radical cation. For identification of charge carriers, the absorption spectrum and molar absorption coefficient of each charged species have been evaluated separately using various combinations of electron donor and acceptor materials. Consequently, the MDMO‐PPV hole polaron has been found to have a broad absorption at ∼950 nm and the PCBM radical anion and cation show a distinct absorption at 1020 and 890 nm, respectively. On the basis of these absorption spectra, the transient spectra observed for the blend films have been simulated. The spectrum for a low PCBM fraction is well reproduced by superposition of the absorption spectra of the MDMO‐PPV hole polaron and PCBM radical anion. On the other hand, the spectrum for a high PCBM fraction is well reproduced by superposition of the absorption spectra of the MDMO‐PPV hole polaron, PCBM radical anion, and PCBM radical cation, which indicates that the PCBM radical cation is formed in the blend films with PCBM at a high concentration. Possible mechanisms for the formation of the PCBM radical cation in the blend are also discussed.

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Section: Charge Carriers Formed In Mdmo-ppv/pcbm Blendsmentioning

confidence: 99%

“…Indeed, ambipolar charge transport has already been reported for fullerene-based field-effect transistors (FET) that include PCBM. [10,11] However, it is still not clear whether the PCBM radical cation is formed as a hole carrier in the blend films or not.…”

Section: Introductionmentioning

confidence: 99%

Formation of Methanofullerene Cation in Bulk Heterojunction Polymer Solar Cells Studied by Transient Absorption Spectroscopy

Yamamoto

Guo

Ohkita

et al. 2008

Adv Funct Materials

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“…Furthermore, the p-channel operation was realized in the C 60 thin-film FET by modifying Au electrodes with self-assembly monolayers. 15 These results show that the FET operation in the thin-film FET devices can also be controlled by using metal electrodes with various , as in the single crystals FET. 11,12 In this letter, we have studied the output properties of C 60 thin-film FET devices fabricated with metal electrodes exhibiting the value of 2.5-5.65 eV.…”

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confidence: 83%

Output properties of C60 field-effect transistor device with Eu source/drain electrodes

Ochi

Nagano

Ohta

et al. 2006

Applied Physics Letters

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Field-effect transistor (FET) device with thin films of C60 has been fabricated with Eu electrodes exhibiting small work function. The C60 FET device shows n-channel FET properties with high field-effect mobility, 0.50cm2V−1s−1. Furthermore, nonvanishing drain current, i.e., normally on, is observed in this FET device. This originates from small energy barrier for electron from Eu source electrode to lowest unoccupied molecular orbital of C60.

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“…[4][5][6][7] Furthermore, by employing unique surface treatment, it is possible to fabricate n-type and/or ambipolar transistors using conventional p-type organic semiconductors. 8 Although various kinds of organic complementary circuits have been fabricated 9-14 using new materials and/or surface treatment techniques, the typical operation voltage of the organic circuits exceeds 10 V; 15 further reduction in the voltage is needed for practical use. The thinning of the gate dielectric layers reduces the operation voltage efficiently.…”

Section: Reduction In Operation Voltage Of Complementary Organic Thinmentioning

confidence: 99%

Reduction in operation voltage of complementary organic thin-film transistor inverter circuits using double-gate structures

Hizu

Sekitani

Someya

et al. 2007

Applied Physics Letters

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The authors have fabricated organic inverters comprising p-type pentacene and n-type fluoroalkyl naphthalenetetracarboxylic di-imide thin-film transistors (TFTs). The TFTs have double-gate structures that independently control the threshold voltage of the p- and n-type TFTs. The mobilities of the p- and n-type transistors are 0.18 and 0.09cm2∕Vs, respectively. Both the as-manufactured p- and n-type TFTs exhibit depletion-type behavior, which can be changed to enhancement-type behavior by applying a voltage bias to the top-gate electrodes. By controlling the top-gate biases, the operation voltage of the organic inverter circuits can be systematically reduced to 5V.

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Ambipolar operation of fullerene field-effect transistors by semiconductor/metal interface modification

Cited by 50 publications

References 28 publications

Formation of Methanofullerene Cation in Bulk Heterojunction Polymer Solar Cells Studied by Transient Absorption Spectroscopy

Formation of Methanofullerene Cation in Bulk Heterojunction Polymer Solar Cells Studied by Transient Absorption Spectroscopy

Output properties of C60 field-effect transistor device with Eu source/drain electrodes

Reduction in operation voltage of complementary organic thin-film transistor inverter circuits using double-gate structures

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