2013
DOI: 10.1209/0295-5075/104/57005
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Ambipolar charge transport in non-peripherally substituted octahexyl zinc phthalocyanine

Abstract: Time-of-flight measurements on 2 μm thick drop-cast films of 1,4,8,11,15,18,22,25octakis(hexyl)phthalocyaninato zinc complex in a sandwich configuration between transparent indium tin oxide and aluminum metal electrodes have been performed. The results show that intrinsic ambipolar transport characteristics are exhibited by this very stable compound having values in the order of 10 −4 cm 2 V −1 s −1 for both types of charge carrier. Both electron and hole transport are dispersive due to a high degree of positi… Show more

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Cited by 8 publications
(4 citation statements)
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References 26 publications
(20 reference statements)
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“…High drift motilities of up to 1.4 cm 2 V −1 s −1 and 0.5 cm 2 V −1 s −1 for both hole and electrons in the crystalline solid phase of (6PcH 2 ) were obtained at rt from the TOF measurement [26]. The mobility values of 8GdPc 2 are at least one order of magnitude higher than those reported for non-peripherally octahexyl substituted ambipolar zinc (ZnPc 6 ) phthalocyanine [27].…”
Section: Resultsmentioning
confidence: 77%
“…High drift motilities of up to 1.4 cm 2 V −1 s −1 and 0.5 cm 2 V −1 s −1 for both hole and electrons in the crystalline solid phase of (6PcH 2 ) were obtained at rt from the TOF measurement [26]. The mobility values of 8GdPc 2 are at least one order of magnitude higher than those reported for non-peripherally octahexyl substituted ambipolar zinc (ZnPc 6 ) phthalocyanine [27].…”
Section: Resultsmentioning
confidence: 77%
“…To find out the charge transport mechanism in ZnTTBPc–RGO, I – V characteristics have been recorded in the 88–320 K temperature range (the data for sample G are shown in Figure S5 in the Supporting Information). Pure ZnTTBPc shows a transition from crystal phase to liquid crystal mesophase at ∼335 K. , The I – V data in the mesophase are not stable which restricts us to take data up to 320 K. , The temperature ( T ) dependent resistance ( R ) of samples F, G, and H (Figure a) depicts decreasing nature with increasing temperature owing to semiconducting behavior . This nonlinear behavior of resistance follows the equation where R 0 is a prefactor, T 0 represents the characteristic temperature related to the energy needed for charge carrier hopping, and p is an exponent.…”
Section: Results and Discussionmentioning
confidence: 99%
“…This value is three orders of magnitude higher than one obtained for similar configured 2 μm thick 6ZnPc drop-cast films. 22 This relatively high mobility is attributed to the larger, well defined 6CuPc crystallites formed during slow cooling of the sample. For both bias voltages, the photo-current is found to have progressively decreased over time.…”
Section: Resultsmentioning
confidence: 99%