Ambipolar charge sensing of few-charge quantum dots

Almeida, A. J.; Seco, Alejandro Márquez; Berg, T. van den; Ven, Bram van de; Bruijnes, F.; Amitonov, Sergey V.; Zwanenburg, Floris A.

doi:10.1103/physrevb.101.201301

Cited by 10 publications

(10 citation statements)

References 45 publications

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“…However, in quantum devices based on CMOS technology, devices are typically unipolar. The limited studies of ambipolar quantum dots typically used transport measurements of a single quantum dot connected to both n-type and p-type ohmics. ,− Recently, Souza de-Almeda et al demonstrated a device with an n-type dot to read out the charge state of a p-type dot (and vice versa). Now the open question is the feasibility of using ambipolar charge sensing in spin qubit devices at the single hole level.…”

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confidence: 99%

“…The limited studies of ambipolar quantum dots typically used transport measurements of a single quantum dot connected to both n-type and p-type ohmics. 14,21−25 Recently, Souza de-Almeda et al 26 hole MOS platform via an adjacent charge sensor. The device shows a hole singlet−triplet relaxation time of 11 μs, which is reported for a known double dot hole occupation of (2,8).…”

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Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform

et al. 2023

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Holes in silicon quantum dots are receiving attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties using charge sensing to determine the number of holes in a quantum dot, and in controlling the coupling between adjacent quantum dots. We address these problems by fabricating an ambipolar complementary metal-oxide-semiconductor (CMOS) device using multilayer palladium gates. The device consists of an electron charge sensor adjacent to a hole double quantum dot. We demonstrate control of the spin state via electric dipole spin resonance. We achieve smooth control of the interdot coupling rate over 1 order of magnitude and use the charge sensor to perform spin-to-charge conversion to measure the hole singlet−triplet relaxation time of 11 μs for a known hole occupation. These results provide a path toward improving the quality and controllability of hole spin-qubits.

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Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform

et al. 2023

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“…In a quasi-two-dimensional (planar) quantum dot,with the strongest confinement along the growth direction, the confinement splits the fourfold degeneracy at the Γ point into light and heavy holes, offering a resilient spin qubit residing in the heavy hole subspace [9,19,20]. Spin blockade detection [21][22][23][24], control over the charge state down to a single hole [25,26], fabrication of arrays [27][28][29], and demonstration of single [30,31] and two-qubit operations [32] are among recent experimental achievements with planar dots. In contrast, the strong confinement-induced spin-orbital mixing in a nanowire geometry [33][34][35] gives large and tunable spinorbit interaction [36][37][38][39] and fast spin manipulation [40,41].…”

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confidence: 99%

Charge-noise induced dephasing in silicon hole-spin qubits

Malkoc,

Stano,

Loss

2022

Preprint

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We investigate theoretically charge-noise induced spin dephasing of a hole confined in a quasi-twodimensional silicon quantum dot. Central to our treatment is accounting for higher-order corrections to the Luttinger Hamiltonian. Using experimentally reported parameters, we find that the new terms give rise to sweet-spots for the hole-spin dephasing, which are sensitive to device details: dot size and asymmetry, growth direction, and applied magnetic and electric fields. Furthermore, we estimate that the dephasing time at the sweet-spots is boosted by several orders of magnitude, up to order of milliseconds.

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“…21 Such ambipolar quantum dots have been studied via direct electrical transport, and recently, ambipolar charge sensing via single-electron and single-hole charge sensors has been demonstrated. 22 However, readout via gate-based sensors 23 or direct dispersive readout via spin projection in double quantum dots [24][25][26] offers more compact and scalable measurement methodologies with comparable measurement sensitivity and shorter integration time.…”

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confidence: 99%

Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire

Duan

Lehtinen

Fogarty

et al. 2021

Applied Physics Letters

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We report on ambipolar gate-defined quantum dots in silicon on insulator nanowires fabricated using a customized complementary metal-oxide-semiconductor process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilize the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition (IDT) of both electron and hole double quantum dots, achieving a minimum integration time of 160 (100) ls for electrons (holes). Our results present the opportunity to combine, in a single device, the long coherence times of electron spins with the electrically controllable hole spins in silicon.

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Ambipolar charge sensing of few-charge quantum dots

Cited by 10 publications

References 45 publications

Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform

Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform

Charge-noise induced dephasing in silicon hole-spin qubits

Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire

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