Abstract:The microluminescence surface scan technique MSST has been used to investigate photocarrier di usion in undoped In0:53Ga0:47As -InP single quantum well QW , in the temperature T range from 15 K to 295 K. Narrowing of the photoluminescence PL spatial pro le is observed as the temperature is lowered, indicating reduction of the photocarrier di usion length upon cooling. It was found that the width of the PL spatial pro le follows a linear function of temperature, but a change in slope by a factor of 2.6 is obser… Show more
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