2011 20th European Conference on Circuit Theory and Design (ECCTD) 2011
DOI: 10.1109/ecctd.2011.6043830
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AM-PM distortion caused by transistor's signal-dependent input impedance

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Cited by 12 publications
(3 citation statements)
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“…Design of RF amplifiers for ET applications is not trivial as V env tracks the envelope, the gate-source capacitance ( C gs ) of the transistor changes. This is similar to C ds mentioned above, introducing a mismatch and further AM–PM distortion [20]. This can be compensated for, by tuning the input matching network of the PA.…”
Section: Practical Implementationmentioning
confidence: 76%
“…Design of RF amplifiers for ET applications is not trivial as V env tracks the envelope, the gate-source capacitance ( C gs ) of the transistor changes. This is similar to C ds mentioned above, introducing a mismatch and further AM–PM distortion [20]. This can be compensated for, by tuning the input matching network of the PA.…”
Section: Practical Implementationmentioning
confidence: 76%
“…Therefore, when controlling the gate bias, the impact can be observed not only in the gain but also in the varying output phase. The main reason for the transistor nonlinear AMPM behavior is usually the signal-dependent input capacitance that pulls the input matching and causes phase shift at the transistor input [34]. Similarly, varying the PA gate voltage changes the input capacitance and hence has a direct impact on the signal mean phase as well as the nonlinear AMPM.…”
Section: A Experimental Bias-dependent Lut Pa Modelmentioning
confidence: 99%
“…When talking about the reasons of AM-PM distortion (amplitude-dependent phase shift) in amplifiers, two reasons are commonly mentioned. First, some of the circuit capacitance can be non-linear, or the Miller capacitance may appear to be signal-dependent due to compressing gain [5] (Fig. 2).…”
Section: Analysing the Am-pm In A Memoryless Amplifiermentioning
confidence: 99%