Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method

Straubinger, Thomas L.; Bickermann, Matthias; Weingärtner, Roland; Wellmann, Peter J.; Winnacker, A.

doi:10.1016/s0022-0248(02)00917-x

Cited by 56 publications

(40 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…These were compared to experiments for validation of the calculated data. [7,8] The results of these calculations are summarized in Figure 2. At a high internal gas flux, the concentration of the SiC gas species in front of the phase boundary is significantly reduced, especially at the center of the growth chamber.…”

Section: Influence Of the Internal Gas Flowmentioning

confidence: 99%

“…A crystal grown in such a way consists of a very highly doped zone near the seed while the aluminum incorporation decreases exponentially. [7] Hence, the yield of wafers with a desired aluminum concentration is very low. To achieve high aluminum concentrations for low specific resistivity, the extremely high dopant concentration in the system leads to such a high aluminum flux in the first growth stages that the crystal quality is severely affected.…”

Section: Aluminummentioning

confidence: 99%

“…In this set-up, the external reservoir is heated by the crucible and to a smaller extent by induction from the coil; thus the distance between the actual growth set-up and the reservoir determines the temperature of the reservoir and the vapor pressure of the dopant source (for details see the literature [7] ). The aluminum is evaporated and transported by an inert gas flow to the growth interface.…”

Section: Aluminummentioning

confidence: 99%

“…The vapor pressure of a dopant can now be adjusted independently from the growth parameters (e.g., by using a bubbler or an external reservoir) and can be transported by the inert gas flow. [6,7] A comparison between the conventional PVT setup and the M-PVT set-up is shown in Figure 1.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Growth of Silicon Carbide Bulk Crystals with a Modified Physical Vapor Transport Technique

Müller

Künecke

Queren

et al. 2006

Chemical Vapor Deposition

View full text Add to dashboard Cite

In this paper, the development of the modified physical vapor transport (M-PVT) method for SiC bulk crystal growth is reviewed. For this technique, elements from CVD are combined with the conventional PVT (physical vapor transport) method to achieve a better process and particularly dopant control. To this end, an additional gas flow is introduced directly into the growth chamber of a PVT growth system. For stable crystal growth it is important that the additional gas flow is of the same order of magnitude as the SiC-species flow by sublimation. Doping experiments resulted in phosphorous concentrations up to 1.5 × 10 18 cm -3 and aluminum concentrations up to 1.3 × 10 20 cm -3 using a PH 3 -flow and a solid aluminum source in an external reservoir as dopant source, respectively. Also, the growth of a crystal with alternating p-and n-type regions for the investigation of the charge carrier-dependant dislocation evolution in SiC is presented to illustrate the outstanding flexibility that is offered by the M-PVT method.

show abstract

Section: Influence Of the Internal Gas Flowmentioning

confidence: 99%

Section: Aluminummentioning

confidence: 99%

Section: Aluminummentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Growth of Silicon Carbide Bulk Crystals with a Modified Physical Vapor Transport Technique

Müller

Künecke

Queren

et al. 2006

Chemical Vapor Deposition

View full text Add to dashboard Cite

show abstract

“…Apart from these well-established techniques, emerging processes should be considered in the near future. One could cite, for example, the halide CVD alternative technique [7] or the modified PVT [8] process for doping control during growth. Along this line, the continuous feed (CF) PVT method was recently proposed as a new process concept to grow large boules of high-purity material.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic Aspects of the Growth of SiC Single Crystals using the CF‐PVT Process

Chaussende

Blanquet

Baillet

et al. 2006

Chemical Vapor Deposition

View full text Add to dashboard Cite

The main trends that govern the continuous-feed physical vapor transport (PVT), bulk-crystal-growth process is investigated experimentally, together with thermodynamic and computation fluid dynamics (CFD) calculations. Several chemical systems are considered. An analysis of the chemistry of every successive step (CVD, transfer, and PVT) is presented first. The effects of hydrogen and chlorine are then investigated. Then, the interaction between the different steps is discussed. The strong chemical interaction which exists between the CVD and the PVT zones is demonstrated to require the consideration of the whole process and not the two zones separately.

show abstract

Growth of Silicon Carbide

Sudarshan

Cherednichenko

Yakimova

2010

Bulk Crystal Growth of Electronic, Optical &Amp; Optoelectronic Materials

View full text Add to dashboard Cite

Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method

Cited by 56 publications

References 16 publications

Growth of Silicon Carbide Bulk Crystals with a Modified Physical Vapor Transport Technique

Growth of Silicon Carbide Bulk Crystals with a Modified Physical Vapor Transport Technique

Thermodynamic Aspects of the Growth of SiC Single Crystals using the CF‐PVT Process

Growth of Silicon Carbide

Contact Info

Product

Resources

About