Aluminum oxynitride dielectrics for multilayer capacitors with higher energy density and wide temperature properties

Bray, K. R.; Wu, Richard L. C.; Fries-Carr, S.; Weimer, J.A.

doi:10.1016/j.tsf.2009.06.052

Cited by 17 publications

(13 citation statements)

References 13 publications

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“…AlN, Al 2 O 3 and Si 3 N 4 and also stoichiometric mixtures of these binary systems such as transparent Al-O-N, Al-Si-N and Al-Si-O-N are widely chemically and thermally inert. In addition, materials with an increased O content are less prone to postfabricational oxidation [38][39][40]. In order to test the thermal stability of the fabricated Al-O-N coatings, high temperature in situ XRD (HTisXRD) was carried out for selected samples with O contents up to 16%.…”

Section: Materials Performance Of Al-o-n Coatingsmentioning

confidence: 99%

Understanding the microstructural evolution and mechanical properties of transparent Al-O-N and Al-Si-O-N films

Fischer

Trant

Thorwarth

et al. 2019

Science and Technology of Advanced Materials

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Optically transparent, colorless Al-O-N and Al-Si-O-N coatings with discretely varied O and Si contents were fabricated by reactive direct current magnetron sputtering (R-DCMS) from elemental Al and Si targets and O2 and N2 reactive gases. The Si/Al content was adjusted through the electrical power on the Si and Al targets, while the O/N content was controlled through the O2 flow piped to the substrate in addition to the N2 flow at the targets. The structure and morphology of the coatings were studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM), while the elemental composition was obtained from Rutherford backscattering spectrometry (RBS) and heavy ion elastic recoil detection analysis (ERDA). The chemical states of the elements in the coatings were analyzed by X-ray photoelectron spectroscopy (XPS). Based on analytical results, a model describing the microstructural evolution of the Al-O-N and also previously studied Al-Si-N [1, 2, 3, 4] coatings with O and Si content, respectively, is established. The universality of the microstructural evolution of these coatings with the concentration of the added element is attributed to the extra valence electron (e–) that must be incorporated into the AlN wurtzite host lattice. In the case of Al-O-N, this additional valence charge arises from the e – acceptor O replacing N in the AlN wurtzite lattice, while the e – donor Si substituting Al fulfills that role in the Al-Si-N system. In view of future applications of ternary Al-O-N and quaternary Al-Si-O-N transparent protective coatings, their mechanical properties such as residual stress (σ), hardness (HD) and Young’s modulus (E) were obtained from the curvature of films deposited onto thin substrates and by nanoindentation, respectively. Moderate compressive stress levels between −0.2 and −0.5 GPa, which suppress crack formation and film-substrate delamination, could be obtained together with HD values around 25 GPa.

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Section: Materials Performance Of Al-o-n Coatingsmentioning

confidence: 99%

Understanding the microstructural evolution and mechanical properties of transparent Al-O-N and Al-Si-O-N films

Fischer

Trant

Thorwarth

et al. 2019

Science and Technology of Advanced Materials

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“…The research prompted by the industry, in order to develop a large variety of technologies, aims the production of materials that can perform different solicitations, where the electrical, mechanical, chemical, thermal and optical properties may be adjusted to configure a multifunctional behavior [1,2]. In this particular point, the magnetron sputtering is a very important technique capable of producing such materials [3] AlN is an excellent thermal conductor [4,5], with high stability and resistance to caustic chemical etching [6][7][8], being commonly used as substrate in several microelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

“…Aluminum oxynitride thin films (AlN x O y ) have some interesting applications in different technological fields, such as protective coatings against wear, diffusion and corrosion, for oxidation resistance of epoxy films [29], as dielectric in multilayer capacitors with high energy density and wide temperature properties [4], among others [30]. However, the available knowledge on this particular system is still reduced [4,[31][32][33] and the studies on the aluminum oxynitride are mainly related with its spinel structure [34][35][36][37][38].…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering

et al. 2012

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Direct current magnetron sputtering was used to produce AlN x O y thin films, using an aluminum target, argon and a mixture of N 2 +O 2 (17:3) as reactive gases. The partial pressure of the reactive gas mixture was increased, maintaining the discharge current constant. Within the two identified regimes of the target (metallic and compound), four different tendencies for the deposition rate were found and a morphological evolution from columnar towards cauliflower-type, ending up as dense and featureless-type films. The structure was found to be Al-type (face centered cubic) and the structural characterization carried out by X-ray 2 diffraction and transmission electron microscopy suggested the formation of an aluminumbased polycrystalline phase dispersed in an amorphous aluminum oxide/nitride (or oxynitride) matrix. This type of structure, composition, morphology and grain size, were found to be strongly correlated with the electrical response of the films, which showed a gradual transition between metallic-like responses towards semiconducting and even insulating-type behaviors. A group of films with high aluminum content revealed a sharp decrease of the temperature coefficient of resistance (TCR) as the concentration ratio of non-metallic/aluminum atomic ratio increased. Another group of samples, where the non-metallic content became more important, revealed a smooth transition between positive and negative values of TCR. In order to test whether the oxynitride films have a unique behavior or simply a transition between the typical responses of aluminum and of those of the correspondent nitride and oxide, the electrical properties of the ternary oxynitride system were compared with AlN x and AlO y systems, prepared in similar conditions.

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“…High temperature operating capacitors are needed to keep up with the high temperature demand in power conversion systems. [7][8][9] There are only very few thin film candidates \competitors" which were studied as high temperature dielectrics such as aluminum oxynitride (AlNO) capacitor, 10 amorphous carbon nitride for high temperature capacitor dielectric, 11 and boron nitride capacitor which is patented by the author of this manuscript. 12 The BNO high temperature dielectric material presented in this work shows better thermal and frequency response characteristics than AlNO and diamond-like carbon counterparts.…”

Section: Introductionmentioning

confidence: 99%

High temperature dielectric properties of (B_xN_yO_z) thin films deposited using ion source assisted physical vapor deposition

Badi

2015

J. Adv. Dielect.

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The dielectric integrity has been one of the major obstacle in bringing out capacitor devices with suitable performance characteristics at high temperatures. In this paper, B x N y O z dielectric films for high temperature capacitors solutions are investigated. The films were grown on silicon substrate by using ion source assisted physical vapor deposition technique. The as-grown films were characterized by SEM, XRD, and XPS. The capacitor structures were fabricated using B x N y O z as a dielectric and titanium as metal electrodes. The elaborated devices were subjected to electrical and thermal characterization. They exhibited low electrical loss and very good stability when subjected to high temperature for a prolonged period of time.

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Aluminum oxynitride dielectrics for multilayer capacitors with higher energy density and wide temperature properties

Cited by 17 publications

References 13 publications

Understanding the microstructural evolution and mechanical properties of transparent Al-O-N and Al-Si-O-N films

Understanding the microstructural evolution and mechanical properties of transparent Al-O-N and Al-Si-O-N films

Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering

High temperature dielectric properties of (B_xN_yO_z) thin films deposited using ion source assisted physical vapor deposition

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Aluminum oxynitride dielectrics for multilayer capacitors with higher energy density and wide temperature properties

Cited by 17 publications

References 13 publications

Understanding the microstructural evolution and mechanical properties of transparent Al-O-N and Al-Si-O-N films

Understanding the microstructural evolution and mechanical properties of transparent Al-O-N and Al-Si-O-N films

Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering

High temperature dielectric properties of (BxNyOz) thin films deposited using ion source assisted physical vapor deposition

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High temperature dielectric properties of (B_xN_yO_z) thin films deposited using ion source assisted physical vapor deposition