Aluminum oxide thin dielectric film formation under elevated gravity conditions

Geiculescu, A. Corina; Strange, T. F.

doi:10.1016/j.tsf.2005.11.112

Cited by 12 publications

(5 citation statements)

References 24 publications

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“…Significant wear or tear is observed over the course of the 2 months period and locations of high oxygen concentration (darkened spots) are detected utilizing SEM and EDS analysis (insets in Figure ). Although all of the measurements are performed in the oil phase, PVD Al substrates are exposed to surfactant water droplets as well as cleaning solvents (i.e., isopropyl alcohol) leading to partial oxidation and degradation of the substrate surface. − …”

Section: Resultsmentioning

confidence: 99%

Investigation of Macroscopic Interfacial Dynamics between Clathrate Hydrates and Surfactant Solutions

2010

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Macroscopic interfacial interactions between cyclopentane (CP) hydrates and various surfactants droplets are examined in a CP/n-decane oil mixture. Initial contact force and subsequent z-axis dependent retraction force are measured utilizing a high-resolution microbalance integrated with a micrometer-precision stage. The resulting retraction force is utilized to determine the overall adhesion energy of the system. In addition, interfacial tensions and contact angles of the system are examined to further understand the effect of surface-active agents and substrates on the initial contact and retraction forces.

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Section: Resultsmentioning

confidence: 99%

Investigation of Macroscopic Interfacial Dynamics between Clathrate Hydrates and Surfactant Solutions

2010

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“…[11][12][13][14] Among many potential materials, Al 2 O 3 thin lms are well known as high-k gate dielectrics because of their low interfacial trap density with oxide semiconductors and a relative permittivity of $9. 15 For example, a sodium b-alumina gate dielectric prepared using a sol-gel reaction at 830 C to produce an oxide TFT showed a mobility of 28 cm 2 V À1 s À1 . 16 Furthermore, an AlO x gate dielectric deposited using a multiplespin-coating procedure and annealed at 300 C had an oxide TFT mobility of 33 cm 2 V À1 s À1 .…”

Section: Introductionmentioning

confidence: 99%

Soluble oxide gate dielectrics prepared using the self-combustion reaction for high-performance thin-film transistors

et al. 2014

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“…5À7 In some cases, for example, in production of electrolytic capacitors and anticorrosion protection of aluminum and its alloys, anodization is combined with other oxidation methods. 8,9 The relatively new electrochemical treatment technique being widely applied to lightweight metals is plasma electrolytic oxidation (PEO). 10 PEO operates at potentials above the breakdown voltage of an oxide film growing on the metal surface (typically, 120À350 V for aluminum).…”

Section: Introductionmentioning

confidence: 99%

“…The conventional anodization methods allow production of alumina films of controlled thickness and quality. − In some cases, for example, in production of electrolytic capacitors and anticorrosion protection of aluminum and its alloys, anodization is combined with other oxidation methods. , …”

Section: Introductionmentioning

confidence: 99%