Aluminum on the Si(100) surface: Growth of the first monolayer

Nogami, J.; Baski, A. A.; Quate, C. F.

doi:10.1103/physrevb.44.1415

Cited by 177 publications

(67 citation statements)

References 10 publications

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“…Several metal atoms have been found to form dimers and dimer chains oriented perpendicular to the silicon dimer rows on the Si(001) surface at low coverage [19]. Depending on the coverage and growth temperature, other structures are observed, including island growth and alloying.…”

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confidence: 99%

Structure of Self-Assembled Mn Atom Chains on Si(001)

et al. 2015

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Mn has been found to self-assemble into atomic chains running perpendicular to the surface dimer reconstruction on Si(001). They differ from other atomic chains by a striking asymmetric appearance in filled state scanning tunneling microscopy (STM) images. This has prompted complicated structural models involving up to three Mn atoms per chain unit. Combining STM, atomic force microscopy, and density functional theory we find that a simple necklacelike chain of single Mn atoms reproduces all their prominent features, including their asymmetry not captured by current models. The upshot is a remarkably simpler structure for modeling the electronic and magnetic properties of Mn atom chains on Si(001).

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confidence: 99%

Structure of Self-Assembled Mn Atom Chains on Si(001)

et al. 2015

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“…All the experimental results 9,10,11,12,13,14,15,16,17,18,19,20 point to the fact that at low temperatures Al, Ga and In form 2×2 structure on the Si(001) surface at 0.5 ML coverage.…”

Section: Introductionmentioning

confidence: 94%

“…Low-energy-electron-diffraction (LEED), Auger electron spectroscopy (AES) and Scanning tunneling microscopy (STM) studies have provided much informations about the interaction of Al, Ga and In overlayers on the Si(001) surface at different coverages and at different temperatures 9,10,11,12,13,14,15,16,17,18,19,20 . Ide et al 9 observed 2×2, 2×3, 4×5, and 1×7 structures depending on the coverages less than 1 monolayer (ML) of Al on Si(001) and the substrate temperature in their LEED and AES experiments.…”

Section: Introductionmentioning

confidence: 99%

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Para to ortho transition of metallic dimers on Si(001)

Gupta

Batra

2004

Phys. Rev. B

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Extensive electronic structure calculations are performed to obtain the stable geometries of metals like Al, Ga and In on the Si(001) surface at 0.5 ML and 1 ML coverages. Our results coupled with previous theoretical findings explain the recent experimental data in a comprehensive fashion. At low coverages, as shown by previous works, 'Para' dimers give the lowest energy structure. With increasing coverage beyond 0.5 ML, 'Ortho' dimers become part of low energy configurations leading toward a 'Para' to 'Ortho' transition at 1 ML coverage. For In mixed staggered dimers ('Ortho' and 'Para') give the lowest energy configuration. For Ga, mixed dimers are non-staggered, while for Al 'Para' to 'Ortho' transition of dimers is complete. Thus at intermediate coverages between 0.5 and 1 ML, the 'Ortho' and 'Para' dimers may coexist on the surface. Consequently, this may be an explanation of the fact that the experimental observations can be successfully interpreted using either orientation. A supported zigzag structure at 0.5 ML, which resembles (CH)x, does not undergo a dimerization transition, and hence stays semi-metallic. Also, unlike (CH)x the soliton formation is ruled out for this structure.

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“…It represents a natural template for spontaneous growing linear structures of many materials, like group III-V metals. Group III metals (Al, Ga, In, Tl) are known to grow in onedimensional (1D) atomic chains when deposited on the Si(100) surface 1,2,3,4 . Technique of scanning tunneling microscopy (STM) enabled detailed study of metal layers with atomic resolution.…”

Section: Introductionmentioning

confidence: 99%

Heterogeneous nucleation and adatom detachment at one-dimensional growth of In onSi(100)−2×1

et al. 2009

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Growth of atomic indium chains -1D islands -on the Si(100)-2×1 surface was observed by scanning tunneling microscopy (STM) at room temperature and simulated by means of a kinetic Monte Carlo method. Density of indium islands and island size distribution were obtained for various deposition rates and coverage. STM observation of growth during deposition of indium provided information on growth kinetics and relaxation of grown layers. Important role of C-type defects at adsorption of metal atoms was observed. Measured growth characteristics were simulated using a microscopic model with anisotropic surface diffusion and forbidden zones along the metal chains. An analysis of experimental and simulation data shows that detachment of indium adatoms from the chains substantially influences a growth scenario and results in monotonously decreasing chain length distribution function at low coverage. Diffusion barriers determined from the simulations correspond to almost isotropic diffusion of indium adatoms on the surface. The results are discussed with respect to data reported in earlier papers for other metals.

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Aluminum on the Si(100) surface: Growth of the first monolayer

Cited by 177 publications

References 10 publications

Structure of Self-Assembled Mn Atom Chains on Si(001)

Structure of Self-Assembled Mn Atom Chains on Si(001)

Para to ortho transition of metallic dimers on Si(001)

Heterogeneous nucleation and adatom detachment at one-dimensional growth of In onSi(100)−2×1

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