Aluminum nitride films for optical applications

Abstract

3~ecasin S. A, , 4~~t i t~t e of Qptoelectronics I Bucharest Romania 3mw\;lry:Hard and adherent Am layers on glass have b e n deposited by reactive magnetron sputtering. The deposition rate, the structure and the optical properties have been investigated mainly with respect to possible optical applicatians .

Deposition Characteristics of AlN Thin Film Prepared by the Dual Ion Beam Sputtering System

“…Its characteristics are a wide direct band gap (~6.3 eV), high thermal conductivity, good chemical and thermal stability, good dielectric properties, very fast Rayleigh velocity, 1 and a high refractive index (>2.1) in the visible light range. 2 The AlN film has a wide application in microelectronic devices because of its high thermal conductivity (320 w/mÁk), high electrical resistance, and attractive mechanical properties. 3 Because its thermal expansion coefficient is similar to that of Si, AlN film has potential applications for metal-insulator-semiconductor structures.…”