Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate

Abstract

There is great promise for using HEMT-based sensors to enhance the detection sensitivity for glucose detection in EBC. Depending on the immobilized material, HEMT-based sensors can be used for sensing different materials. These electronic detection approaches with rapid response and good repeatability show potential for the investigation of airway pathology. The devices can also be integrated into a wireless data transmission system for remote monitoring applications. This sensor technology could use the exhaled breath condensate to measure the glucose concentration for diabetic applications.

Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors

“…Once again, the high surface area of nanowires provides an ideal approach for enzymatic detection of biochemically important substances [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30].…”

“…GaN's use as a chemical sensor is well-documented [26][27][28][29][30][31][32][33][34]. GaN has a high breakdown field, can operate at high temperatures in excess of 400ºC and has decent thermal conductivity in bulk, low-defect wafers, making it an effective material choice for gas sensing.…”

“…There is also interest in applying these to biomarker detection [21][22][23][24][25][26][27][28][29][30].…”

Functionalised zinc oxide nanotube arrays as electrochemical sensors for the selective determination of glucose

“…Therefore, based on our obtained results during the experiments, we proposed instead of fabricating the ZnO nanorods/nanowires/nanotubes on the gate area inside the transistor (e.g., on the MOSFET/AlGaN/GaN HEMT devices), ZnO nanorods/nanowires/nanotubes can be interfaced/integrated as an extended gate [36,45]. In this way, the chemically sensitive gate is then separated from the rest of the transistor construction, and the sensing area increases significantly as compared to gate areas of some published sensors based on transistors, e.g.,…”

The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor

“…The high electron density and high electron mobility in the 2DEG channel can deliver high sensitivity of the sensor. In the AlGaN/GaN based sensor, the drain and source terminals are located on the chip surface along with the gate, which is immobilized with the sensitive membrane for selective detection, including the pH of the solution [3,4], ions [5][6][7], DNA [8][9][10], protein [11,12], glucose [13], etc. The most essential distinction between the AlGaN/GaN based sensors and the conventional HEMT power electronic devices is the working environment, while HEMT power electronic devices operate in ambient conditions, AlGaN/GaN based liquid sensors are expected to perform in a solution environment.…”