Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique

Rodak, L. E.; Korakakis, D.

doi:10.1007/s11664-010-1455-2

Cited by 9 publications

(11 citation statements)

References 15 publications

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“…The switched atomic layer epitaxy yields a sharp absorption edge and clear interfaces 58 . Following works on this issue further revealed that high-quality GaN/AlN short-period SLs possess properties that are significantly different from traditional continuous AlGaN epilayer 59 – 62 . In 2011, Rodaka et al worked on AlN/GaN SLs and explored the relationship of the binary alloy growth rates with the interfacial quality 63 .…”

Section: Manipulation Of Fields Of Chemical Potentialsmentioning

confidence: 99%

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Gao

Cai

et al. 2021

Light Sci Appl

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As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence in preventing virus transmission, which further reveals their wide applications from biological, environmental, industrial to medical. However, the relatively low external quantum efficiencies (mostly lower than 10%) strongly restrict their wider or even potential applications, which have been known related to the intrinsic properties of high Al-content AlGaN semiconductor materials and especially their quantum structures. Here, we review recent progress in the development of novel concepts and techniques in AlGaN-based LEDs and summarize the multiple physical fields as a toolkit for effectively controlling and tailoring the crucial properties of nitride quantum structures. In addition, we describe the key challenges for further increasing the efficiency of DUV LEDs and provide an outlook for future developments.

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Section: Manipulation Of Fields Of Chemical Potentialsmentioning

confidence: 99%

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Gao

Cai

et al. 2021

Light Sci Appl

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“…The fabrication starts with the growth of layers that make up the LED active regions using MOVPE techniques [38], [39]. The LED structure is grown on a sapphire substrate (430 μm thick) and is shown in the Fig.…”

Section: Device Fabricationmentioning

confidence: 99%

“…1. [39], [38]. InGaN/GaN -based quantum wells with a periodicity of 11.90 nm (QW ∼ 4 nm, Barrier ∼ 8 nm) were grown with 16% indium concentration (In 0.16 Ga 0.94 N) on n-type (Silicon doped) GaN and followed by p-type (Magnesium doped) GaN.…”

Section: Device Fabricationmentioning

confidence: 99%

Improvement in the Light Extraction of Blue InGaN/GaN-Based LEDs Using Patterned Metal Contacts

Kadiyala

Lee

Rodak

et al. 2014

IEEE J. Electron Devices Soc.

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We demonstrate a method to improve the light extraction from an LED using photonic crystal (PhC)-like structures in metal contacts. A patterned metal contact with an array of Silicon Oxide (SiO x ) pillars (440 nm in size) on an InGaN/GaNbased MQW LED has shown to increase output illumination uniformity through experimental characterization. Structural methods of improving light extraction using transparent contacts or dielectric photonic crystals typically require a tradeoff between improving light extraction and optimalelectrical characteristics.The method presented here provides an alternate solution to provide a 15% directional improvement (surface normal) in the radiation profile and ∼ 30% increase in the respective intensity profile without affecting the electrical characteristics of the device. Electron beam patterning of hydrogen silesquioxane (HSQ), a novel electron beam resist is used in patterning these metal contacts. After patterning, thermal curing of the patterned resist is done to form SiO x pillars. These SiO x pillars aid as a mask for transferring the pattern to the p-metal contact. Electrical and optical characterization results of LEDs fabricated with and without patterned contacts are presented. We present the radiation and intensity profiles of the planar and patterned devices extracted using Matlab-based image analysis technique from 200 μm (diameter) circular unpackaged LEDs.Index Terms-Electron beam lithography (EBL), light emitting diode (LED), patterning, photonic crystal (PC), hydrogen silesquioxane (HSQ).

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“…This process takes place in a rapid thermal annealer (RTA) at 800 ˚C for 5 minutes in a nitrogen environment of 500 sccm. This is done to activate the charge carriers and reduce the defects of the p-type GaN [181].…”

Section: Discussionmentioning

confidence: 99%

A Low-Power Optoelectronic Characterizer for CubeSat: LOCC and III-V Nitride Based LEDs

Pachol¹

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A Low-Powered Optoelectronic Characterizer for CubeSat: LOCC and III-V Nitride Based LEDs Matthew J. Pachol III-V semiconductor materials exhibit robustness and natural hardness when exposed to ionizing radiation and temperature swings. With these characteristics in mind, III-V Nitride Light Emitting Diodes (LEDs) are ideal devices for space-based applications and missions. The effects of ionizing radiation on optoelectronic devices comprised of III-V materials have been studied, but results have been obtained through experiments performed in terrestrial laboratories. While these laboratory tests may lend insight into device lifetimes, performance degradation, etc., they are no substitute for similar measurements and characterization performed in space. Interest in small satellite applications have grown over the past decade. These solutions range from Earth imaging to communication networks. Small satellites provide a unique opportunity to gain an understanding of the reliability and operational characteristics of III-V based materials and other semiconductor devices while exposed to the environment of space. To meet the constraints of the small satellite, a Low-powered Optoelectronic Characterizer for CubeSat (LOCC) has been developed in PC/104 form, measuring 3.6 by 3.8 inches. LOCC performs current-voltage and electroluminescent measurements of LEDs while in space. The LOCC system is designed using low-power integrated circuits that can supply over 100 mA of current to LEDs while maintaining low power of 3.2W under operation. This thesis presents the design, implementation, and control of the LOCC system. This includes system block diagrams, printed circuit board layouts, interfacing, firmware, and software. Additionally, the resulting current-voltage measurements, required wattage, and required data storage are presented to illustrate functionality. This instrumentation enables the study of optoelectronic devices in space, allowing future research to focus on producing radiation hard light emitting devices that can operate in environments with reduced shielding against ionizing radiation while maintaining device reliability.

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Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique

Cited by 9 publications

References 15 publications

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Improvement in the Light Extraction of Blue InGaN/GaN-Based LEDs Using Patterned Metal Contacts

A Low-Power Optoelectronic Characterizer for CubeSat: LOCC and III-V Nitride Based LEDs

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