1984
DOI: 10.1016/0040-6090(84)90136-6
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Aluminum films prepared by metal-organic low pressure chemical vapor deposition

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Cited by 88 publications
(35 citation statements)
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“…The electrical resistivity of Al coatings deposited at 573 K with a similar injection rate was measured to be 3.5 AE 0.1 mVÁcm, a value greater than that of bulk Al (2.7 mVÁcm) but in agreement with other reported values for Al thin films. [20] The difference in values is attributed to the inherent loss in precision associated with measurements of a rough surface topography, [21] and the presence of oxygen in the coatings as noted in the aforementioned GD-OES results. It is generally recognized that the CVD process offers excellent thickness distribution on substrates with complex geometries.…”
Section: à3mentioning
confidence: 95%
“…The electrical resistivity of Al coatings deposited at 573 K with a similar injection rate was measured to be 3.5 AE 0.1 mVÁcm, a value greater than that of bulk Al (2.7 mVÁcm) but in agreement with other reported values for Al thin films. [20] The difference in values is attributed to the inherent loss in precision associated with measurements of a rough surface topography, [21] and the presence of oxygen in the coatings as noted in the aforementioned GD-OES results. It is generally recognized that the CVD process offers excellent thickness distribution on substrates with complex geometries.…”
Section: à3mentioning
confidence: 95%
“…Unlike the analogous gallium source, the thermal pyrolysis of (CH 3 ) 3 Al leads to the formation of Al 2 C 3 and not Al metal [85][86][87]. Triethyl aluminum, (C 2 H 5 ) 3 Al, and triisobutyl aluminum, ((CH 3 ) 2 CHCH 2 ) 3 Al, decompose through a b-elimination reaction [88] and can lead to the deposition of metallic Al [89]. Triethyl aluminum, (C 2 H 5 ) 3 Al, and triisobutyl aluminum, ((CH 3 ) 2 CHCH 2 ) 3 Al, decompose through a b-elimination reaction [88] and can lead to the deposition of metallic Al [89].…”
Section: Aluminum Sourcesmentioning
confidence: 99%
“…Individual 4 values for TMA and DMAH were obtained, based on the observed optical density for the C-H stretching band and the concentration calculated from its vapor pressure (TMA: 11.6 Torr; 9 DMAH: 1.9 Torr 8 ), assuming the ideal gas laws. Molar concentration C for TDMA can be estimated using Eqn [2]. The TDMA molar fraction in the DMAH (70 mol% as a monomer) TMA (30 mol% as a monomer) vapor mixture was estimated to be at least 50 mol%.…”
Section: Evaluation Of the Tdma Fraction In The Mixturementioning
confidence: 99%
“…Then how many TDMA molecules are there in the TMA and DMAH mixture? Following the BeerLambert law, the TDMA molar concentration C is represented by Eqn [2], CL 2…”
Section: Evaluation Of the Tdma Fraction In The Mixturementioning
confidence: 99%
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