Aluminum-ferromagnetic Josephson tunnel junctions for high quality magnetic switching devices

Vettoliere, A.; Satariano, Roberta; Ferraiuolo, Raffaella; Palma, Luigi Di; Ahmad, Halima Giovanna; Ausanio, G.; Pepe, Giovanni Piero; Tafuri, F.; Montemurro, Domenico; Granata, C.; Parlato, L.; Massarotti, Davide

doi:10.1063/5.0101686

Cited by 11 publications

(3 citation statements)

References 58 publications

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“…Furthermore, our process allows the deposition of additional layers, and specifically of the ferromagnetic (F) layer afterward the definition of the junction. The overall structure is a magnetic JJ (MJJ) of the type SIS’FS; i.e., a superconductor/insulator/thin superconductor/ferromagnet/superconductor stacked multilayer [ 19 ]. So far, tunnel SIS’FS JJs have been designed using standard Nb technology for the implementation of cryogenic superconducting magnetic memories compatible with single-flux-quantum (SFQ) circuitry.…”

Section: Introductionmentioning

confidence: 99%

“…The magnetic nature of the SIS’FS junction guaranteed by the F layer is confirmed by the hysteretic behavior of the magnetic field pattern, while preserving the high quality of the tunnel behavior guaranteed by the Al oxide barrier. This technology can be extended to most ferromagnetic materials to develop ad hoc switchable elements, and guarantee the easy integration of MJJs in a large variety of digital and quantum circuits by standard optical lithography [ 19 ]. In addition, the developed fabrication approach is reproducible and adaptable to a wide class of fabrication protocols since ferromagnetic materials can be deposited ex situ without affecting the tunnel properties of the overall device.…”

Section: Introductionmentioning

confidence: 99%

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High-Quality Ferromagnetic Josephson Junctions Based on Aluminum Electrodes

et al. 2022

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Aluminum Josephson junctions are the building blocks for the realization of superconducting quantum bits. Attention has been also paid to hybrid ferromagnetic Josephson junctions, which allow switching between different magnetic states, making them interesting for applications such as cryogenic memories, single-photon detectors, and spintronics. In this paper, we report on the fabrication and characterization of high-quality ferromagnetic Josephson junctions based on aluminum technology. We employed an innovative fabrication process inspired by niobium-based technology, allowing us to obtain very high-quality hybrid aluminum Josephson junctions; thus, supporting the use of ferromagnetic Josephson junctions in advanced quantum circuits. The fabrication process is described in detail and the main DC transport properties at low temperatures (current–voltage characteristic, critical current as a function of the temperature, and the external magnetic field) are reported. Here, we illustrate in detail the fabrication process, as well as the main DC transport properties at low temperatures (current–voltage characteristic, critical current as a function of the temperature, and the external magnetic field).

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High-Quality Ferromagnetic Josephson Junctions Based on Aluminum Electrodes

et al. 2022

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“…In addition, graphene processability also represents a limiting factor in its full exploitation in device development. Advancements towards next-generation electronics and sensing technology [19,20] have been achieved through fabrication techniques at the nanoscale, such as electronic lithography, gentle etching, nanopatterning [21], material deposition [22][23][24], and interlayer positioning [25]. In particular, this last technique has been investigated for the achievement of high transparent contact on graphene flakes [25][26][27], proving to be useful in facilitating the current passage [20,[28][29][30][31][32].…”

Section: Introductionmentioning

confidence: 99%

Insights into the Electrical Characterization of Graphene-like Materials from Carbon Black

et al. 2022

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A new class of graphene-related materials (GRMs) obtained as water suspensions through a two-step oxidation/reduction of a nanostructured carbon black, namely graphene-like (GL) materials, has recently emerged. GL materials undergo self-assembly in thin amorphous films after drying upon drop-casting deposition on different surfaces. The GL films, with thicknesses of less than a micron, were composed of clusters of nanoparticles each around 40 nm in size. The exploitation of the GL films for different options (e.g., bioelectronic, sensoristic, functional filler in composite) requires a deep characterization of the material in terms of their electric transport properties and their possible interaction with the surface on which they are deposited. In this work, a careful electrical characterization of GL films was performed at room temperature and the results were compared with those achieved on films of benchmark graphenic materials, namely graphene oxide (GO) materials, obtained by the exfoliation of graphite oxide, which differ both in morphology and in oxidation degree. The results indicate a non-linear current–voltage relationship for all the investigated films. The extrapolated dielectric constant (ε) values of the investigated GRMs (GL and GO materials) agree with the experimental and theoretically predicted values reported in the literature (ε~2–15). Because similar conductance values were obtained for the GL materials deposited on glass and silicon oxide substrates, no significant interactions of GL materials with the two different substrates were highlighted. These results are the starting point for boosting a feasible use of GL materials in a wide spectrum of applications, ranging from electronics to optics, sensors, membranes, functional coatings, and biodevices.

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Nanoscale spin ordering and spin screening effects in tunnel ferromagnetic Josephson junctions

Satariano,

Volkov,

Ahmad

et al. 2024

Commun Mater

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Magnetic Josephson junctions (MJJs) have emerged as a prominent playground to explore the interplay between superconductivity and ferromagnetism. A series of fascinating experiments have revealed striking phenomena at the superconductor/ferromagnet (S/F) interface, pointing to tunable phase transitions and to the generation of unconventional spin-triplet correlations. Here, we show that the Josephson effect, being sensitive to phase space variation on the nanoscale, allows a direct observation of the spin polarization of the S/F interface. By measuring the temperature dependence of the Josephson magnetic field patterns of tunnel MJJs with strong and thin F-layer, we demonstrate an induced nanoscale spin order in S along the superconducting coherence length at S/F interface, i.e., the inverse proximity effect, with the first evidence of full spin screening at very low temperatures, as expected by the theory. A comprehensive phase diagram for spin nanoscale ordering regimes at S/F interfaces in MJJs has been derived in terms of the magnetic moment induced in the S-layer. Our findings contribute to drive the design and the tailoring of S/F interfaces also in view of potential applications in quantum computing.

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Aluminum-ferromagnetic Josephson tunnel junctions for high quality magnetic switching devices

Cited by 11 publications

References 58 publications

High-Quality Ferromagnetic Josephson Junctions Based on Aluminum Electrodes

High-Quality Ferromagnetic Josephson Junctions Based on Aluminum Electrodes

Insights into the Electrical Characterization of Graphene-like Materials from Carbon Black

Nanoscale spin ordering and spin screening effects in tunnel ferromagnetic Josephson junctions

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