Aluminum Etching in Carbon Tetrachloride Plasmas

Tokunaga, K.; Hess, Dennis W.

doi:10.1149/1.2129789

Cited by 44 publications

(28 citation statements)

References 13 publications

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“…This thin oxide surface layer can be a barrier to etching if the A1/AI~Oa etch rate ratio is sufficiently low and has been reported to result in nonuniform etching of the underlying A1 layer (1,5,8,9), The presence of the A1 oxide 2ayer produces an initiation period in which the or~et of A1 etching is delayed until the inhibiting layer is etched away. This thin oxide surface layer can be a barrier to etching if the A1/AI~Oa etch rate ratio is sufficiently low and has been reported to result in nonuniform etching of the underlying A1 layer (1,5,8,9), The presence of the A1 oxide 2ayer produces an initiation period in which the or~et of A1 etching is delayed until the inhibiting layer is etched away.…”

Section: Resultsmentioning

confidence: 99%

Reactive Ion Etching of Aluminum/Silicon

Light

1983

J. Electrochem. Soc.

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High resolution, reproducible dry etching of A1/Si can be achieved using BC13 and C12 mixtures in a hexagonal cathode reactive ion etching system. The etch directionality is a function of the BClz/C12 composition, the number of wafers in the reactor, and the d-c self-bias voltage. Increases in the concentration of etching species produced by raising the percentage of C12 in BC13 and by decreasing the wafer load increases the total etch rate while enhancing the isotropic etch rate relative to the anisotropic etch rate. The d-c self-bias voltage (or applied rf power) appears to partition the active etching species between isotropic etching and anisotropic etching without affecting the total etch rate. * Electrochemical Society Active Member.

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Section: Resultsmentioning

confidence: 99%

Reactive Ion Etching of Aluminum/Silicon

Light

1983

J. Electrochem. Soc.

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“…For instance, with anodized aluminum electrodes, radical recombination on electrode surfaces is diminished, and in addition, small concentrations of oxygen are released by the electrode during the etch process (2,6). One of these techniques involves the use of oxygen-containing electrode materials.…”

Section: Resultsmentioning

confidence: 99%

Chemical Properties of Polymer Films Formed during the Etching of Aluminum in CCl4 Plasmas

Nagy¹,

Hess²

1982

J. Electrochem. Soc.

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Polymer films or residues formed during aluminum etching in carbon te~rachloride plasmas were investigated using Auger, x-ray photoelectron, and Fourier transform infrared spectroscopy. The Amultaneous etching and deposition process occurring in the CC14 plasma resulted in a chlorocarbon-based film containing aluminum. Due to residual gases in the vacuum chamber and to post-deposition air exposure, the films also contained hydrogen and oxygen. The resulting organic/inorganic film matrix generates insight into previously observed behavior of these polymer residues.ABSTRACT InP and GaAs etching in chlorine plasmas at 0.3 Torr follows an Arrhenius dependence on substrate temperature. Apparent activation energies, Ea, of 34.5 -2.8 and 10.5 + 0.7 kcaYmol, respectively, were determined from both optical emission of product species, and step height or weight change measurements. For InP, Ea equals the heat of vaporization of InClose, and the absolute etch rate (7/~m/min at 250~ is in reasonable agreement with the predicted vaporization rate of InC13. Hence, volatilization of InCl~s) is most likely the rate-controlling step for etching InP. Sputter Auger analysis shows that etching in a chlorine plasma leaves multiple layer coverage of InC13 on InP (removable by washing with deionized water), and submonolayer levels of chlorine on GaAs. Both surfaces are rich in the group III element. The etched surface morphologies of InP and GaAs are strongly dependent on temperature, exhibiting a rough-to-smooth texture transition above -250 ~ and -120~ respectively.Plasma etching of III-V compound semiconductor materials has potential application for device processing. Several have already been demonstrated, includ-

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“…This opposes the assumption of atomic chlorine being the primary etch active species, or at least suggests that another plasma species is taking active part in the etching reaction. For aluminum etch processes, Tokunaga et al proposed that CCl x molecules are assisting in the reduction of native oxides, which cannot be etched in a Cl 2 plasma . Further examination of the PJM process is needed to validate this connection for the case of SiO 2 etching.…”

Section: Resultsmentioning

confidence: 99%

“…For aluminum etch processes, Tokunaga et al proposed that CCl x molecules are assisting in the reduction of native oxides, which cannot be etched in a Cl 2 plasma. [14] Further examination of the PJM process is needed to validate this connection for the case of SiO 2 etching.…”

Section: Temperature Regimes Of the Pjm Processmentioning

confidence: 99%

Etch Mechanism and Temperature Regimes of an Atmospheric Pressure Chlorine-Based Plasma Jet Process

Piechulla

Bauer

Boehm

et al. 2016

Plasma Process. Polym.

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Reactive atmospheric plasma jets containing halogenous compounds are employed as locally acting tools for surface figure shaping or surface modification in ultra‐precision surface machining technologies. In the current study, the interaction between an atmospheric CCl4/O2 containing plasma jet with silicon surface is investigated aiming at elucidating the chemical kinetics of surface reactions. Different process regimes are identified comprising material removal as well as polymeric and oxide layer formation, which depend on the ratio of the reactive components and substrate surface temperature. XPS and SEM measurements support the findings.

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Aluminum Etching in Carbon Tetrachloride Plasmas

Cited by 44 publications

References 13 publications

Reactive Ion Etching of Aluminum/Silicon

Reactive Ion Etching of Aluminum/Silicon

Chemical Properties of Polymer Films Formed during the Etching of Aluminum in CCl4 Plasmas

Etch Mechanism and Temperature Regimes of an Atmospheric Pressure Chlorine-Based Plasma Jet Process

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