Aluminum doping of epitaxial silicon carbide

Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)

“…For the p-type layers, the aluminium incorporation increases with increasing growth rate and also with higher C/Si ratio. This is also in line with previous results for the standard growth process [24]. This indicates that dopant incorporation at high growth rates using chloride-based epitaxy is similar to the standard process at low growth rates.…”

Gas‐Phase and Surface Kinetics of Epitaxial Silicon Carbide Growth Involving Chlorine‐Containing Species

“…The more commonly used processes adopt SiH 4 and light hydrocarbons, such as C 3 H 8 or C 2 H 4 , diluted in H 2 acting as a carrier gas. Moreover, N 2 or NH 3 , and Al(CH 3 ) 3 or B 2 H 6 precursors are used for n-type and p-type doping, respectively. [3][4][5][6] The main challenges for these high temperature CVD processes are principally the control of the temperature and reactant concentration fields to ensure the area meets with industrial uniformity on performance parameters.…”

“…Moreover, N 2 or NH 3 , and Al(CH 3 ) 3 or B 2 H 6 precursors are used for n-type and p-type doping, respectively. [3][4][5][6] The main challenges for these high temperature CVD processes are principally the control of the temperature and reactant concentration fields to ensure the area meets with industrial uniformity on performance parameters. On the other hand, the particulate formation in the gas phase, that afflicts the silane-hydrocarbon systems, limits the maximum accessible growth rate value, because the depletion of the gas-phase precursors available for the deposition worsens the surface quality, due to the particulate impinging on the deposition surface.…”

Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition

“…Another similarity with Al impurity is the effect of growth rate. Indeed, Ge incorporation was found to increase with growth rate, like Al does [33]. This can be attributed to the reduced residence time on the surface (and thus reduced desorption rate) of the adatoms at higher growth rates.…”