Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices

Jiang, Xiaotong; Wong, Fu-Lung; Fung, Man‐Keung; Lee, S. T.

doi:10.1063/1.1605805

Cited by 524 publications

(246 citation statements)

References 12 publications

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“…Because oxygen vacancies act as donor states 31,32 , this should increase nanowire conductivity. Although the ITO and IZO microstructures and chemical bonding states are more complex, the basic crystal structures are sufficiently similar to those of In 2 O 3 and ZnO to reasonably expect that the In 2 O 3 and ZnO nanowire work functions will increase similarly upon ozone treatment 30,33 . Thus, the source/drain-nanowire contact should not significantly change with ozone treatment.…”

Section: Resultsmentioning

confidence: 98%

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

et al. 2007

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Section: Resultsmentioning

confidence: 98%

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

et al. 2007

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“…The low manufacturing cost and nontoxicity of the AZO films make them more suitable for TCO applications than relatively expensive ITO ͑In 2 O 3 :Sn͒ films. 2,3 Thermal annealing of TCO films at temperatures as low as 400°C in air has been widely adopted in the manufacturing processes of optoelectronic devices. The air annealing of TCO films generally increases their resistivity by changing the defect concentration of the films.…”

Section: Reversible Change In Electrical and Optical Properties In Epmentioning

confidence: 99%

Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films

Noh

Jung

Lee

et al. 2008

Journal of Applied Physics

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Aluminum-doped ZnO ͑AZO͒ films were epitaxially grown on sapphire ͑0001͒ substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01ϫ 10 −4 ⍀ cm. However, after annealing at 450°C in air, the electrical resistivity of the AZO films increased to 1.97ϫ 10 −1 ⍀ cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H 2 recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H 2 annealing. A photoluminescence study showed that oxygen interstitial ͑O i Ј͒ is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films.

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“…[24][25][26][27][28][29][30] Moreover, for instance, Cs-doped TiO 2 , Csdoped ZnO, Al-doped ZnO, Al-doped MoO 3 and metal oxides incorporated with other functional elements have been developed to realize efficient carrier transport with other features of high conductivity, the carrier blocking effect and optical enhancement. [31][32][33][34][35][36][37][38] These doped metal oxide interfacial layers require high-temperature annealing or co-evaporation methods, and the film formation is usually limited to either normal or inverted device architecture only.…”

Section: Introductionmentioning

confidence: 99%

MoOx and V2Ox as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices

et al. 2015

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To achieve fabrication and cost competitiveness in organic optoelectronic devices that include organic solar cells (OSCs) and organic light-emitting diodes (OLEDs), it is desirable to have one type of material that can simultaneously function as both the electron and hole transport layers (ETLs and HTLs) of the organic devices in all device architectures (i.e., normal and inverted architectures). We address this issue by proposing and demonstrating Cs-intercalated metal oxides (with various Cs mole ratios) as both the ETL and HTL of an organic optoelectronic device with normal and inverted device architectures. Our results demonstrate that the new approach works well for widely used transition metal oxides of molybdenum oxide (MoO x ) and vanadium oxide (V 2 O x ). Moreover, the Cs-intercalated metaloxide-based ETL and HTL can be easily formed under the conditions of a room temperature, water-free and solution-based process. These conditions favor practical applications of OSCs and OLEDs. Notably, with the analyses of the Kelvin Probe System, our approach of Cs-intercalated metal oxides with a wide mole ratio range of transition metals (Mo or V)/Cs from 1 : 0 to 1 : 0.75 can offer significant and continuous work function tuning as large as 1.31 eV for functioning as both an ETL and HTL. Consequently, our method of intercalated metal oxides can contribute to the emerging large-scale and low-cost organic optoelectronic devices.

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Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices

Cited by 524 publications

References 12 publications

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films

MoOx and V2Ox as hole and electron transport layers through functionalized intercalation in normal and inverted organic optoelectronic devices

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