Aluminum doped zinc oxide (AZO)-based pressure sensor

Samoei, Victor K.; Jayatissa, Ahalapitiya H.

doi:10.1016/j.sna.2019.111816

Cited by 16 publications

(9 citation statements)

References 12 publications

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“…It has analogous electrical and optical properties like conventional indium-doped tin oxides and fluorine-doped tin oxide . AZO-based thin films are widely used in photonic devices such as light-emitting diodes, flat panel displays, thin film solar cells, , as well as various sensing devices. , Typically, the above applications demand high transmittance (>80%) in the visible region as well as metal-like conductivity (sheet resistance <10 Ω/□). Various vacuum-based popular techniques such as sputtering, pulsed laser deposition, electron beam evaporation, as well as non-vacuum techniques such as chemical vapor deposition, spray pyrolysis, chemical bath deposition, and sol–gel deposition are well reported for coating AZO thin films on different substrates.…”

Section: Introductionmentioning

confidence: 99%

Room Temperature Sputtered Aluminum-Doped ZnO Thin Film Transparent Electrode for Application in Solar Cells and for Low-Band-Gap Optoelectronic Devices

et al. 2022

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Aluminum-doped zinc oxide (AZO) is a popular, low-cost, nontoxic material that finds application as a transparent conducting electrode in photonic, sensing, and photovoltaic devices. We report the AZO thin films with a high figure of merit on large-area glass substrates by direct current magnetron sputtering without any intentional substrate heating. Furthermore, a simple thermal post-treatment to improve the transmittance of AZO thin film in the infrared region for its application in low-band-gap devices is presented. High optoelectronic properties are obtained by optimizing oxygen content during the sputtering process. The structural, morphological, optoelectrical, and photoluminescence characterization of cold sputtered AZO films is investigated for its latent applications. AZO thin films with an electrical sheet resistance of 8.8 Ω/□ and a visible light transmittance of 78.5% with thickness uniformity above 95% are achieved on 300 mm × 300 mm glass substrate. The AZO film with optimized process conditions is employed as a transparent electrode to fabricate a copper–indium–gallium–selenide-based thin film solar cell, demonstrating 11.8% power conversion efficiency. The AZO film with optimized sputter conditions was post-treated in ambient conditions with an Al blanket to suppress the resistivity by proper organization of the defects due to Al 3+ consumption and point defects, resulting in improved transparency (85%) in the infrared region with a sheet resistance of 40 Ω/□. This has great potential for developing scalable and low-cost AZO thin films for transparent electrodes in a wide range of the spectrum.

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Section: Introductionmentioning

confidence: 99%

Room Temperature Sputtered Aluminum-Doped ZnO Thin Film Transparent Electrode for Application in Solar Cells and for Low-Band-Gap Optoelectronic Devices

et al. 2022

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“…Magnesium oxide (MgO) has a larger band gap of 7.8 eV; hence, it is a perfect material to incorporate into ZnO to widen the band gap by varying the Mg content, which are considered to be most suitable for photocatalytic applications [18]. Doping Mg with ZnO will increase the conduction electrons, thus increasing the conductivity in ZnO [19]. Wang et al [20] have synthesized the Mg-doped ZnO nanoparticles by auto combustion method and proved that ZnO with optimal Mg content enhances the photocatalytic activity.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, Characterization, and Comparison of Pure Zinc Oxide and Magnesium‐Doped Zinc Oxide Nanoparticles and their Application on Ethanol Sensing Activities

Kanagathara

Sabari

Saravanan

et al. 2022

Journal of Nanomaterials

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In this study, we reported the synthesis of pure ZnO and Mg-doped ZnO (Mg-ZnO) nanoparticles by simple co-precipitation method and studied the ethanol sensing activity of the synthesized nanostructures. XRD analysis illustrates that the synthesized ZnO and Mg-doped ZnO nanoparticles (NPs) possess hexagonal wurtzite structure and the average crystallite size is calculated to be 29 nm and 33 nm, respectively. The FT-IR spectra of pure and Mg-doped ZnO NPs confirm that the presence of bands appeared near 400 cm-1 for Zn-O and the bands at 622 cm-1 can be attributed to Mg-O stretching modes. The band gap energy estimated from the absorption spectra for ZnO and Mg-ZnO NPs, respectively, at 3.26 eV and 3.32 eV, displays the considerable optical property. Further, we observed that the UV-Vis spectroscopic data exhibits high absorbance in the UV range for the prepared samples. The SEM images clearly display the needle-like morphology of the synthesized samples. Dynamic light scattering analysis shows average particle size of 110 nm. The ethanol sensing measurements were carried out with 100 ppm concentration, and the linear responses from ZnO and Mg-ZnO NPs-based sensors are detected in the working temperature of 350°C. The obtained results demonstrated that the synthesized Mg-ZnO nanostructures have improved conductivity with larger active surface area for the most promising application in the ethanol sensing activity.

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“…Due to a high value of light transmission coefficient and the ability to control resistivity, zinc oxide becomes a competitive material for expensive ITO layers used in optoelectronics [ 1 , 5 , 9 ]. Moreover, it also finds application in other products, such as hydrogen [ 10 ] or pressure sensors [ 11 ].…”

Section: Introductionmentioning

confidence: 99%

Influence of Conditioning Temperature on Defects in the Double Al2O3/ZnO Layer Deposited by the ALD Method

et al. 2021

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In this work, we present the results of defects analysis concerning ZnO and Al2O3 layers deposited by atomic layer deposition (ALD) technique. The analysis was performed by the X-band electron paramagnetic resonance (EPR) spectroscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) methods. The layers were either tested as-deposited or after 30 min heating at 300 °C and 450 °C in Ar atmosphere. TEM and XPS investigations revealed amorphous nature and non-stoichiometry of aluminum oxide even after additional high-temperature treatment. EPR confirmed high number of defect states in Al2O3. For ZnO, we found the as-deposited layer shows ultrafine grains that start to grow when high temperature is applied and that their crystallinity is also improved, resulting in good agreement with XPS results which indicated lower number of defects on the layer surface.

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Aluminum doped zinc oxide (AZO)-based pressure sensor

Cited by 16 publications

References 12 publications

Room Temperature Sputtered Aluminum-Doped ZnO Thin Film Transparent Electrode for Application in Solar Cells and for Low-Band-Gap Optoelectronic Devices

Room Temperature Sputtered Aluminum-Doped ZnO Thin Film Transparent Electrode for Application in Solar Cells and for Low-Band-Gap Optoelectronic Devices

Synthesis, Characterization, and Comparison of Pure Zinc Oxide and Magnesium‐Doped Zinc Oxide Nanoparticles and their Application on Ethanol Sensing Activities

Influence of Conditioning Temperature on Defects in the Double Al2O3/ZnO Layer Deposited by the ALD Method

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