“…This can be achieved via electroless etching using a suitable template, such as a monolayer of polystyrene spheres [39]. The results are similar to the formation of ordered honeycomb structures during anodization [40, 41]. Fig.…”
Silicon nanowires (SiNWs) were fabricated by the electroless etching of an n-type Si (100) wafer in HF/AgNO3. Vertically aligned and high-density SiNWs are formed on the Si substrates. Various shapes of SiNWs are observed, including round, rectangular, and triangular. The recorded maximum reflectance of the SiNWs is approximately 19.2%, which is much lower than that of the Si substrate (65.1%). The minimum reflectance of the SiNWs is approximately 3.5% in the near UV region and 9.8% in the visible to near IR regions. The calculated band gap energy of the SiNWs is found to be slightly higher than that of the Si substrate. The I–V characteristics of a freestanding SiNW show a linear ohmic behavior for a forward bias up to 2.0 V. The average resistivity of a SiNW is approximately 33.94 Ω cm.
“…This can be achieved via electroless etching using a suitable template, such as a monolayer of polystyrene spheres [39]. The results are similar to the formation of ordered honeycomb structures during anodization [40, 41]. Fig.…”
Silicon nanowires (SiNWs) were fabricated by the electroless etching of an n-type Si (100) wafer in HF/AgNO3. Vertically aligned and high-density SiNWs are formed on the Si substrates. Various shapes of SiNWs are observed, including round, rectangular, and triangular. The recorded maximum reflectance of the SiNWs is approximately 19.2%, which is much lower than that of the Si substrate (65.1%). The minimum reflectance of the SiNWs is approximately 3.5% in the near UV region and 9.8% in the visible to near IR regions. The calculated band gap energy of the SiNWs is found to be slightly higher than that of the Si substrate. The I–V characteristics of a freestanding SiNW show a linear ohmic behavior for a forward bias up to 2.0 V. The average resistivity of a SiNW is approximately 33.94 Ω cm.
“…However, for different PAA membranes, the ultrasonic vibration duration is different. For example, for the PAA membrane with a thickness of 41.5 mm and a pore diameter of 80 nm, the ultrasonic vibration duration should be taken less than 10 s so as to obtain the perfect ANTs [15]. Otherwise large ruin of the ANTs will take place.…”
“…Compared with ordinary porous silicon, the geometrical shapes of the electroless etched silicon can be produced intentionally if we control the geometrical shapes and positions of local cathodes. The situation is something like the formation of ordering honeycomb structures during anodization of the Al sheet with surface arrangementordered nanomasks [19].…”
Section: Article In Pressmentioning
confidence: 99%
“…Recently, using a nanochannel array of porous alumina template, the SiNTs have been synthesized via molecular beam epitaxy [17] and a conventional catalyst-assisted vapor-liquid-solid process [18]. However, as pointed out in our previous work [19], when using porous alumina templates to fabricate nanostructured materials, it is necessary to carefully distinguish the obtained products from the alumina nanotubes and nanowires. Therefore, it is interesting and of significance to fabricate the SiNWs and SiNTs in the case when the template is not used.…”
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