AltPSM contact hole application at DRAM 4xnm nodes with dry 193nm lithography

Noelscher, Christoph; Henkel, Thomas; Jauzion-Graverolle, Franck; Hennig, Mario; Morgana, Nicolo; Schlief, Ralph E.; Moukara, Molela; Koehle, Roderick; Neubauer, Ralf

doi:10.1117/12.772806

Optical Microlithography XXI 2008

DOI: 10.1117/12.772806

|View full text |Cite

AltPSM contact hole application at DRAM 4xnm nodes with dry 193nm lithography

Christoph Noelscher¹,

Thomas Henkel²,

Franck Jauzion-Graverolle³

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2013

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…When semiconductor technology node achieves to 28 nm, some function of scanner comes out contribution on process window increase. Focus drilling is the scanner implementation to increase the depth of focus (DoF) for contact-hole or via fabrication processes [1][2][3][4][5][6][7]. The basic principle is to smear out the maximum image contrast at best focus (BF) over a specific defocus range.…”

mentioning

confidence: 99%

The Focus Margin Gain and Limitation Realized by Focus Drilling in 28 nm Hole-Like Design Rules

Deng

Hao

et al. 2013

ECS Trans.

View full text Add to dashboard Cite

Since the device integration and relating lithography process progressively increasing in complexity, more integrated approach to process control has been very necessary. There is more function in scanners that can be used to improve process window, CDU and OVL etc. When semiconductor technology node achieves to 28 nm, some function of scanner comes out contribution on process window increase. Focus drilling is the scanner implementation to increase the depth of focus (DoF) for contact-hole or via fabrication processes [1][2][3][4][5][6][7]. The basic principle is to smear out the maximum image contrast at best focus (BF) over a specific defocus range. This function applies a wafer stage R x -tilt (X-axis tilt) when scanning along the Y-direction (scanning direction). This allows the wafer stage to scan along a plane parallel to its tilt. This paper relies on Focus drilling to improve DoF of 28nm Via process, meanwhile also to analyze its negative impact on EL and CDU etc. And then try to find a balance focus range (Rx tilt) for 28 nm product. But the experiment result showed focus marginal gain is about 15nm, meanwhile it is hard to increase DoF through Rx tilt expanded.

show abstract

mentioning

confidence: 99%

The Focus Margin Gain and Limitation Realized by Focus Drilling in 28 nm Hole-Like Design Rules

Deng

Hao

et al. 2013

ECS Trans.

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

AltPSM contact hole application at DRAM 4xnm nodes with dry 193nm lithography

Cited by 1 publication

References 0 publications

The Focus Margin Gain and Limitation Realized by Focus Drilling in 28 nm Hole-Like Design Rules

The Focus Margin Gain and Limitation Realized by Focus Drilling in 28 nm Hole-Like Design Rules

Contact Info

Product

Resources

About