Thermogravimetry and differential thermal analysis (TG/DTA) were used to examine a process capable of fabricating homoepitaxial, single-crystalline
italicMexnormalZn1−xO
(
Me=Mg
, Ga, etc.) films under thermodynamically stable conditions by liquid phase epitaxy. A liquid solution of alkaline metal (Li, Na, Cs) chlorides is employed at temperatures of
580–650°C
. A reaction of
italicMe+n-normalCln∕ZnnormalCl2
with polycrystalline
normalK2CnormalO3
is applied to continuously form
italicMexnormalZn1−xO
over a
⩾16h
process cycle under ambient air atmosphere and pressure as shown by TG/DTA. Mirrorlike films with a thickness
⩽3μm
have been grown. The high structural quality of the film with sharp interfacial transition from substrate to film has made it possible to observe a surface conductive channel. Temperature-dependent Hall measurement on Li-doped
normalMg0.06normalZn0.94O∕ZnO
heterostructures under vacuum conditions discloses a high-resistivity state with
103Ωcm
at
300K
and a low-resistivity state with
<10Ωcm
at
550K
.