Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

Possémé, N.; Pollet, Olivier; Barnola, S.

doi:10.1063/1.4892543

Cited by 54 publications

(47 citation statements)

References 14 publications

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“…This step was followed by wet etching in aqueous HF solution that removed the modified layer an order of magnitude faster than the nonmodified material. The data in this study suggests that the substantially self-limiting behavior is related to the gradient of hydrogen concentration in the film, 42 an example of the conversion mechanism shown Fig. 9(c).…”

Section: 116mentioning

confidence: 95%

“…Two different ALE approaches have been demonstrated for removal of Si 3 N 4 . 42,87 In this case, chlorine is not a suitable precursor because Si-N bonding is stronger than Cl-N bonds. 87 Instead, in 1999, Matsuura et al demonstrated a novel directional ALE approach where reaction A consisted of removing nitrogen on the surface by excited hydrogen gas exposure to form ammonia (NH 3 ) gas byproduct, as represented in Fig.…”

Section: 116mentioning

confidence: 99%

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Overview of atomic layer etching in the semiconductor industry

Kanarik¹,

Lill²,

Hudson³

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

469

372

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Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices.

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Section: 116mentioning

confidence: 95%

Section: 116mentioning

confidence: 99%

Overview of atomic layer etching in the semiconductor industry

Kanarik¹,

Lill²,

Hudson³

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

469

372

View full text Add to dashboard Cite

show abstract

“…An alternative approach was proposed to combine the anisotropy of plasma etching with the low damage characteristics of wet etching. This consists on a Si 3 N 4 layer modification by hydrogen plasma followed by a HF etching with a high etching rate and high selectivity with respect to the non‐modified Si 3 N 4 …”

Section: Introductionmentioning

confidence: 99%

A Hydrogen Plasma Treatment for Soft and Selective Silicon Nitride Etching

Bouchilaoun

Soltani

Chakroun

et al. 2018

Physica Status Solidi (a)

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In this paper, the development of a soft and selective method to increase the etching rate and control accurately the etched thickness of Si3N4 material is reported. This technique combines the low damage characteristics of wet etching with the anisotropy of plasma etching which is compatible with the requirements of many surface sensitive electronic devices such as MOS transistors. This consists on a local modification of the Si3N4 layer using hydrogen‐based plasma followed by wet chemical etching in buffered oxide etch solution. The plasma conditions are optimized and a relatively high etch rate is demonstrated. FTIR analyses show clear evidence that the formation of N–H and Si–H species in the hydrogenated Si3N4 layer contributes effectively to the increase of the etching rate. Finally, a chemical etching model is proposed to explain the higher etch rate of hydrogenated Si3N4.

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“…This was followed by bombardment of the modified surface using Ar and hydrogen ions. Posseme et al 94 evaluated a thin layer etching method based on low energy ion implantation of the Si 3 N 4 surface using an H 2 plasma. The modified Si 3 N 4 surface layer could be selectively removed using wet etching.…”

Section: Iii-v: Gaasmentioning

confidence: 99%

Atomic Layer Etching at the Tipping Point: An Overview

Oehrlein

Metzler

2015

ECS J. Solid State Sci. Technol.

224

162

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The ability to achieve near-atomic precision in etching different materials when transferring lithographically defined templates is a requirement of increasing importance for nanoscale structure fabrication in the semiconductor and related industries. The use of ultra-thin gate dielectrics, ultra thin channels, and sub-20 nm film thicknesses in field effect transistors and other devices requires near-atomic scale etching control and selectivity. There is an emerging consensus that as critical dimensions approach the sub-10 nm scale, the need for an etching method corresponding to Atomic Layer Deposition (ALD), i.e. Atomic Layer Etching (ALE), has become essential, and that the more than 30-year quest to complement/replace continuous directional plasma etching (PE) methods for critical applications by a sequence of individual, self-limited surface reaction steps has reached a crucial stage. A key advantage of this approach relative to continuous PE is that it enables optimization of the individual steps with regard to reactant adsorption, self-limited etching, selectivity relative to other materials, and damage of critical surface layers. In this overview we present basic approaches to ALE of materials, discuss similarities/crucial differences relative to thermal and plasma-enhanced ALD, and then review selected results on ALE of materials aimed at pattern transfer. The overview concludes with a discussion of opportunities and challenges ahead. A requirement of increasing importance for nanoscale device fabrication is the ability to achieve atomic scale etching control and materials selectivity during pattern transfer.1-8 An etching method corresponding to Atomic Layer Deposition (ALD), i.e. Atomic Layer Etching (ALE), is expected to satisfy these needs as critical dimensions continue to shrink below the 10 nm scale.Demonstrations of self-limited dry etching methods capable of near-atomic resolution have a long history in the dry etching community and a brief review will be presented below. Key challenges for these approaches have been specialized equipment, long process times and low throughput.9,10 However, a recent demonstration using a commercial plasma etch tool 10 and activities within the dry etching community 11 provide indications that the situation has changed, and that we may have reached for ALE the Tipping Point which Gladwell defined as the "the moment of critical mass, the threshold, the boiling point" when "ideas and products and messages and behaviors spread like viruses do".12 This is due to several factors, including unprecedented demands on dry etching technology introduced by the semiconductor device evolution according to Moore's law that can be satisfied by atomic layer etching, advanced capabilities in plasma etch, and the existence of a critical level of information on plasma etch and ALD methods as applied in the semiconductor fabrication space.In this article we will provide a review of background of these approaches, and focus on issues that have to be overcome for widespread implement...

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Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

Abstract: Articles you may be interested inPatterning of silicon nitride for CMOS gate spacer technology. II. Impact of subsilicon surface carbon implantation on epitaxial regrowth

Cited by 54 publications

References 14 publications

Overview of atomic layer etching in the semiconductor industry

Overview of atomic layer etching in the semiconductor industry

A Hydrogen Plasma Treatment for Soft and Selective Silicon Nitride Etching

Atomic Layer Etching at the Tipping Point: An Overview

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