Alternative modeling of resistance versus temperature curves along the c direction of Bi-2212 crystals, suggesting a possible metal/insulator transition below Tc

Boulesteix, C.; Marietti, Y.; Badèche, T.; Monnereau, O.; Grachev, V.

doi:10.1016/s0921-4534(97)00720-x

Cited by 2 publications

(4 citation statements)

References 7 publications

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“…According to the first one, by [13,14], the phenomenon should be related to the superconducting transition itself: we would be dealing with an increase of the resistivity near T c due to the diffusion of free electrons by Cooper pairs. The second proposition, which we have made in [9,15], contests Balestrino's explanation and suggests another origin, not related to the superconducting transition but involving an increase of the Fermi level (hole-filling) with decreasing temperature. In this latter explanation the increase of resistivity corresponds to the first steps of a metal±insulator transition, and the law r c r 0 exp E=kT À T i (where T i is the temperature when the compounds turns to an insulator state) gives a perfect fit to the experimental results.…”

Section: Discussionsupporting

confidence: 66%

“…In this latter explanation the increase of resistivity corresponds to the first steps of a metal±insulator transition, and the law r c r 0 exp E=kT À T i (where T i is the temperature when the compounds turns to an insulator state) gives a perfect fit to the experimental results. We have shown [9,15] that the critical temperature T i depends on the oxidation degree of the crystals and that E ranges between 5 and 10 meV.…”

Section: Discussionmentioning

confidence: 92%

“…Recently, we investigated the strong increase of resistivity along the c-axis with decreasing temperature, just above T c , for underdoped Bi-2212 crystals, and we suggested that the phenomenon was a consequence of a slight shift of the Fermi level in the normal state [9,15]. If the Fermi level reaches the top of the valence band (hole-filling), it may produce a sudden and strong increase of r ab and r c .…”

Section: Possible Origin Of the Anomalymentioning

confidence: 99%

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Hole-Filling above Tc, at the Origin of the In-Plane Resistivity Anomaly in Bi-2212 Crystals

Boulesteix

Marietti

Monnereau³

et al. 2000

phys. stat. sol. (a)

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We have observed a sharp peak (100%) in the in-plane resistivity r ab just above T c , in Bi-2212 crystals, in agreement with previous results from Han et al. who attributed this anomaly to the ªquasi-reentrant behaviourº already observed for polycrystalline samples. This explanation is very likely unadapted to these crystals and we propose another one related to a model we had used to fit r c T curves for Bi-2212 underdoped crystals, namely, an increase of the Fermi level (hole-filling) with decreasing temperature, above T c , probably due to a change in the Bi±O or Cu±O bonds. A previously reported c-axis lattice anomaly, occurring in the same temperature range, is most probably related to this bonding alteration.Nous avons observe Â, pour des cristaux de Bi-2212, un pic intense (100%) de re Â sistivite Â r ab (dans le plan des feuillets). Ceci est en accord avec des re Â sultats ante Â rieurs de Han et al. qui ont atttribue Â l'anomalie en question au comportement ªquasi-re Â entrantº caracte Â ristique des e Â chantillons polycristallins. Cette interpre Â tation ne nous semble pas pertinente dans le cas de nos cristaux et nous proposons une autre origine (d'apre Á s un mode Á le que nous avions utilise Â pour ajuster les courbes r c T de cristaux de Bi-2212 sous-dope Â s) base Â e sur une e Â le Â vation du niveau de Fermi lorsque la tempe Â rature de Â croõ Ãt (au-dessus de T c ). D'autres auteurs constatent par ailleurs une variation du parame Á tre de maille c, qui se produit dans la me Ã me gamme de tempe Â rature. Ces deux phe Â nome Á nes sont probablement lie Â s a Á une modification des liaisons Bi±O ou Cu±O.

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Section: Discussionsupporting

confidence: 66%

Section: Discussionmentioning

confidence: 92%

Section: Possible Origin Of the Anomalymentioning

confidence: 99%

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Hole-Filling above Tc, at the Origin of the In-Plane Resistivity Anomaly in Bi-2212 Crystals

Boulesteix

Marietti

Monnereau³

et al. 2000

phys. stat. sol. (a)

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“…(i) an anomalous variation of the lattice parameters with temperature and an anomalous thermal expansion [1][2][3]; (ii) an anomalous variation with temperature, in the normal state, of both the in-plane [4][5][6][7] and the out-of-plane resistivities [8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Temperature-induced frequency shift of the Raman-active CuO₂planar oxygen vibrational modes of Bi-2212 related to a change of the Cu-O bonding

Boulesteix

Hewitt

Irwin

2000

J. Phys.: Condens. Matter

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A change, with temperature, of the Cu-O or Bi-O bondings was previously suggested because irregular variations, with temperature, of the lattice parameters and of the electrical resistivity were observed in Bi-2212 crystals. To check the validity of this hypothesis, a study of the variation, with temperature, of the positions of Raman peaks associated with vibrations of the different kinds of O atom has been performed at room and at low temperature. It is shown here that the 285 cm −1 Raman peak (B 1g), associated with the out-of-plane vibrations of O atoms of the CuO 2 plane, is shifted by +2% upon decreasing from 294 K to 96 K while the 466 and 627 cm −1 peaks (both A 1g) associated with the other O atoms are not shifted. So Raman spectroscopy confirms a possible change of the Cu-O bonding, in the CuO 2 plane, with temperature, while the Bi-O bonding appears to be unchanged. A hardening of the Cu-O bond is observed at low temperature.

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Alternative modeling of resistance versus temperature curves along the c direction of Bi-2212 crystals, suggesting a possible metal/insulator transition below Tc

Cited by 2 publications

References 7 publications

Hole-Filling above Tc, at the Origin of the In-Plane Resistivity Anomaly in Bi-2212 Crystals

Hole-Filling above Tc, at the Origin of the In-Plane Resistivity Anomaly in Bi-2212 Crystals

Temperature-induced frequency shift of the Raman-active CuO₂planar oxygen vibrational modes of Bi-2212 related to a change of the Cu-O bonding

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Alternative modeling of resistance versus temperature curves along the c direction of Bi-2212 crystals, suggesting a possible metal/insulator transition below Tc

Cited by 2 publications

References 7 publications

Hole-Filling above Tc, at the Origin of the In-Plane Resistivity Anomaly in Bi-2212 Crystals

Hole-Filling above Tc, at the Origin of the In-Plane Resistivity Anomaly in Bi-2212 Crystals

Temperature-induced frequency shift of the Raman-active CuO2planar oxygen vibrational modes of Bi-2212 related to a change of the Cu-O bonding

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Temperature-induced frequency shift of the Raman-active CuO₂planar oxygen vibrational modes of Bi-2212 related to a change of the Cu-O bonding