Alternative alloy to increase bandgap in gallium Oxide, β-(Sc Ga1-)2O3, and rare earth Stark luminescence

Jesenovec, Jani; Dutton, B.; Remple, Cassandra; Smith-Gray, Natalie; Murugesan, Magesh; Peterson, Carl; Downing, Brooke K.; Krishnamoorthy, Sriram; McCluskey, Matthew; McCloy, John S.

doi:10.1016/j.jcrysgro.2022.126823

Cited by 8 publications

(4 citation statements)

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“…36 The results of Ga 2−x Sc x O 3 (0.42 ≤ x ≤ 0.52) were published by Kuz'micheva et al, 37 showing the lattice structure of the crystal. Jasenovec et al 38 showed an increase in the optical band gap of ∼0.7 eV for β-(Sc x Ga 1−x ) 2 O 3 (x = 0.1), while Yahia et al 39 showed the single-crystal structure and solid-state NMR data of Ga 2−x Sc x O 3 (x = 0.83).…”

Section: Introductionmentioning

confidence: 99%

Influence of Chemical and Mechanical Pressure on the Luminescence Properties of Near-Infrared Phosphors

et al. 2023

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In this study, we aim to compare the changes in the luminescence properties of Ga2O3:Cr3+ modified by Al or Sc ion substitution (chemical pressure) and hydrostatic pressure. We find the same behavior for Ga2–x Al x O3:Cr3+ and different behavior for Ga2–x Sc x O3:Cr3+ in terms of the optical properties under chemical and mechanical pressure. We consider Al substitution, which does not affect the chemical bond angles in the Cr3+ local environment and changes the crystal volume, like mechanical pressure does. As confirmed by Raman spectroscopy, the Sc ions cause lattice distortion and influence the chemical bond lengths and angles in the Cr3+ local environment. The energy structure diagrams of all levels of the d3 configuration of the Cr3+ ion as a function of pressure are calculated by considering the pressure dependence of the Racah parameters. The energy structure diagrams presented in the paper show a decrease in the energy of the 2E, 2T1, and 2T2 excited levels with an increase in Dq. This does not align with the behavior predicted for these excited levels by the standard Tanabe–Sugano diagram. It seems correct that a high-pressure experiment involving Cr3+ and other transition metals should be interpreted using the method and diagrams presented herein.

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Section: Introductionmentioning

confidence: 99%

Influence of Chemical and Mechanical Pressure on the Luminescence Properties of Near-Infrared Phosphors

et al. 2023

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“…In contrast to the amorphous state of the film at 25 °C, the different orientations growing state exhibits a reduced absorption, while the single crystalline growth samples demonstrate more pronounced absorption. In order to explore the effect of temperature on its bandgap (Eg), We calculated Eg based on [(αhv) 2 versus hv] fitting curve in figure 2(b), where hv represents the photon energy and α is the absorption coefficient. The relation curve of (αhν) 2 -hν is obtained by the formula (αhν) 2 = C(hν-E g ), and the The SEM images at various growth temperatures are presented in figure 3.…”

Section: Resultsmentioning

confidence: 99%

“…In order to explore the effect of temperature on its bandgap (Eg), We calculated Eg based on [(αhv) 2 versus hv] fitting curve in figure 2(b), where hv represents the photon energy and α is the absorption coefficient. The relation curve of (αhν) 2 -hν is obtained by the formula (αhν) 2 = C(hν-E g ), and the The SEM images at various growth temperatures are presented in figure 3. The images depict the surface and cross-section of films grown at 300 °C, 500 °C, and 650 °C.…”

Section: Resultsmentioning

confidence: 99%

“…Metal oxide semiconductors are a versatile class of materials that have attracted considerable interest for their facile fabrication and wide-ranging applications [1]. They offer several advantages for electronic and optoelectronic devices, such as tunable bandgap [2], stable physiochemical characteristics [3], and practical fabrication processes [4]. The bandgap of oxide semiconductors can be tailored by adjusting the ratio of metal elements and the crystalline phase [5].…”

Section: Introductionmentioning

confidence: 99%

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Substrate temperature dependent crystal structure and deep-ultraviolet photodetection of ZnGa₂O₄ thin films^*

Liu,

Li,

Zhang

et al. 2024

Phys. Scr.

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Zinc gallate (ZnGa2O4) is a promising material for deep-ultraviolet (DUV) photodetectors, owing to its wide bandgap and high transparency. However, the effect of substrate temperature on the structural and optical properties of ZnGa2O4 thin films prepared by magnetron sputtering is not well understood. Here, we report a systematic study of the influence of substrate temperature on the crystal quality, stoichiometry, bandgap, and photodetection performance of ZnGa2O4 thin films deposited on sapphire substrates. We find that the films undergo a phase transition from amorphous to polycrystalline at 300°C, and then to single crystalline at 500°C, accompanied by an increase in the bandgap from 4.6 to 4.9 eV. We also fabricate metal-semiconductor-metal photodetectors based on the ZnGa2O4 thin films with Ti/Au electrodes, which exhibit excellent Ohmic contact and high light-to-dark current ratio. The photodetectors show remarkable and stable DUV response, with the highest performance achieved at a substrate temperature of 650°C. Our results demonstrate the crucial role of substrate temperature in tailoring the crystal structure and DUV photodetection of ZnGa2O4 thin films, and provide a facile route for optimizing their performance.

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Determination of the β to γ Phase Transformation Mechanism in Sc- and Al-Alloyed β-Ga₂O₃ Crystals

Balog,

Lee,

Duarte-Ruiz

et al. 2024

ACS Appl. Electron. Mater.

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Alternative alloy to increase bandgap in gallium Oxide, β-(Sc Ga1-)2O3, and rare earth Stark luminescence

Cited by 8 publications

References 61 publications

Influence of Chemical and Mechanical Pressure on the Luminescence Properties of Near-Infrared Phosphors

Influence of Chemical and Mechanical Pressure on the Luminescence Properties of Near-Infrared Phosphors

Substrate temperature dependent crystal structure and deep-ultraviolet photodetection of ZnGa₂O₄ thin films^*

Determination of the β to γ Phase Transformation Mechanism in Sc- and Al-Alloyed β-Ga₂O₃ Crystals

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Alternative alloy to increase bandgap in gallium Oxide, β-(Sc Ga1-)2O3, and rare earth Stark luminescence

Cited by 8 publications

References 61 publications

Influence of Chemical and Mechanical Pressure on the Luminescence Properties of Near-Infrared Phosphors

Influence of Chemical and Mechanical Pressure on the Luminescence Properties of Near-Infrared Phosphors

Substrate temperature dependent crystal structure and deep-ultraviolet photodetection of ZnGa2O4 thin films *

Determination of the β to γ Phase Transformation Mechanism in Sc- and Al-Alloyed β-Ga2O3 Crystals

Contact Info

Product

Resources

About

Substrate temperature dependent crystal structure and deep-ultraviolet photodetection of ZnGa₂O₄ thin films^*

Determination of the β to γ Phase Transformation Mechanism in Sc- and Al-Alloyed β-Ga₂O₃ Crystals