Alternating Magnetic Force Microscopy: Effect of Si doping on the temporal performance degradation of amorphous FeCoB magnetic tips

Makarova, Marina V.; Akaishi, Yuji; Ikarashi, Taeko; Rao, K.S.; Yoshimura, Satoru; Saito, Hitoshi

doi:10.1016/j.jmmm.2018.09.046

Cited by 14 publications

(8 citation statements)

References 34 publications

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“…Therefore, defected h-BN presents exemplary half-metallic magnetism in a variety of states. The magnetic properties of materials have great attractive properties because magnetic materials are used in the fields of biomedicine, molecular biology, biochemistry, diagnosis, catalysis, nanoelectronic devices and various other industrial applications (Makarova et al 2019;Peng et al 2016). To our best knowledge, structural, electronic and magnetic properties of h-BN supercell structure due to the oxygen atom impurity defects, boron atom vacancy defects and nitrogen atom vacancy defects have not been reported.…”

Section: Introductionmentioning

confidence: 99%

First-Principles Study of Defected Single Layer Hexagonal Boron-Nitride (h-BN)

Neupane

Adhikari

2021

Nepal Journal of Science and Technology

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The novel properties of pristine h-BN, oxygen (O) atom impurity defects in h-BN (h-B(N-O) and h-(B-O)N), one boron (1B) atom vacancy defect in h-BN (h-BN_1B) and one nitrogen (1N) atom vacancy defect in h-BN (h-BN_1N) materials are investigated by spin-polarized density functional theory (DFT) using computational tool Quantum ESPRESSO. We found that they are stable materials. From the band structure calculations, we found that all the considered systems are wide bandgap materials. The bandgap energy of pristine h-BN, impurity defects h-B(N-O) and h-(B-O)N, and vacancy defects h-BN_1B and h-BN_1Nmaterials have values 4.98 eV, 4.19 eV& 2.47 eV,and 4.84 eV& 3.62 eV respectively. Also, it is found that h-B(N-O) and h-BN_1N materials have n-type Schottky contact while h-(B-O)N and h-BN_1B materials have p-type Schottky contact. From the analysis ofdensity of states (DOS) and partial density of states (PDOS) calculations, we found that non-magnetic pristine h-BN changes to magnetic h-B(N-O) andh-(B-O)N materials due to presence of impurity defects,and h-BN_1B andh-BN_1N materials due to presence of vacancy defects. Magnetic moments of h-B(N-O), h-(B-O)N, h-BN_1B and h-BN_1N materials are 1.00 µB/cell, 0.94 µB/cell, 3.00 µB/cell and 1.00 µB/cell respectively. They are obtained due to unpaired up and down spins state of electrons in 2p orbital of B and N atoms in the structures.

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Section: Introductionmentioning

confidence: 99%

First-Principles Study of Defected Single Layer Hexagonal Boron-Nitride (h-BN)

Neupane

Adhikari

2021

Nepal Journal of Science and Technology

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“…ey can be used to design new materials [23]. Also, the magnetic materials can be applied in various fields such as biomedicine, molecular biology, biochemistry, diagnosis, catalysis, nanoelectronic devices, and various other industrial applications like magnetic seals in motors, magnetic sensors, magnetic inks, electrical power generator, transformers, magnetic recording media, and computers [24,25]. e rest part of the paper is organized as follows.…”

Section: Introductionmentioning

confidence: 99%

Tuning Structural, Electronic, and Magnetic Properties of C Sites Vacancy Defects in Graphene/MoS2 van der Waals Heterostructure Materials: A First-Principles Study

Neupane

Adhikari

2020

Advances in Condensed Matter Physics

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In this work, we systematically studied the structure, and electronic and magnetic properties of van der Waals (vdWs) interface Graphene/MoS2 heterostructure (HS-G/MoS2) and C sites vacancy defects in HS-G/MoS2 materials using first-principles calculations. By the structural analysis, we found that nondefects geometry is more compact than defects geometries. To investigate the electronic and magnetic properties of HS-G/MoS2 and C sites vacancy defects in HS-G/MoS2 materials, we have studied band structure, density of states (DOS), and partial density of states (PDOS). By analyzing the results, we found that HS-G/MoS2 is metallic in nature but C sites vacancy defects in HS-G/MoS2 materials have a certain energy bandgap. Also, from the band structure calculations, we found that Fermi energy level shifted towards the conduction band in vacancy defects geometries which reveals that the defected heterostructure is n-type Schottky contacts. From DOS and PDOS analysis, we obtained that the nonmagnetic HS-G/MoS2 material changes to magnetic materials due to the presence of C sites vacancy defects. Right 1C atom vacancy defects (R-1C), left 1C atom vacancy defects (L-1C), centre 1C atom vacancy defects (C-1C), and 2C (1C right and 1C centre) atom vacancy defects in HS-G/MoS2 materials have magnetic moments of −0.75 µB/cell, −0.75 µB/cell, −0.12 µB/cell, and +0.39 µB/cell, respectively. Electrons from 2s and 2p orbitals of C atoms have main contributions for the magnetism in all these materials.

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“…MFM is a kind of AFM, which scans magnetic samples with magnetic probes and detects the interaction between the probes and the samples to reconstruct the magnetic structure of the sample surface [14]. The samples were scanned by MFM with a scanning range of 1 µm 2 .…”

Section: Resultsmentioning

confidence: 99%

Preparation and Magnetic Properties of Fe Doped Zno Thin Films with Dilute Magnetic Semiconductors

Zhang¹,

Liu²,

Yuanhao³

2019

Int J Nanoparticles Nanotech

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Fe doped ZnO solid solution and its semiconductor thin films were prepared by sol-gel method. After aging and quenching, the films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The elemental proportion was obtained by energy dispersive spectrometer (EDS) and the magnetic properties were measured by magnetic force microscope (MFM). The results show that iron doping can inhibit the growth of zinc oxide particles, and then increase the roughness of thin films. The results of MFM show that Fe doping can make non-magnetic ZnO semiconductors become dilute magnetic semiconductors. With the increasing amount of Fe doping, the distribution of magnetic domains and magnetic moments becomes more obvious.

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Alternating Magnetic Force Microscopy: Effect of Si doping on the temporal performance degradation of amorphous FeCoB magnetic tips

Cited by 14 publications

References 34 publications

First-Principles Study of Defected Single Layer Hexagonal Boron-Nitride (h-BN)

First-Principles Study of Defected Single Layer Hexagonal Boron-Nitride (h-BN)

Tuning Structural, Electronic, and Magnetic Properties of C Sites Vacancy Defects in Graphene/MoS2 van der Waals Heterostructure Materials: A First-Principles Study

Preparation and Magnetic Properties of Fe Doped Zno Thin Films with Dilute Magnetic Semiconductors

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