Alternating-Current Transport Properties of the Interface between Nd0.7Sr0.3MnO3Ceramic and a Ag Electrode

Chen, Shun-Sheng; Yang, Changping; Luo, Xia; Bärner, K.; Медведева, И. В.

doi:10.1088/0256-307x/29/2/027302

Cited by 3 publications

(2 citation statements)

References 30 publications

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“…1 under the same measuring condition are also given, as shown in figure 4. The resistivity peak at T MI corresponds to a transition between a ferromagnetic metallic state and a paramagnetic isolating state [24]. For No.…”

Section: Resultsmentioning

confidence: 99%

“…Besides these factors mentioned above, it is also reported that the microstructure defects, grain/phase boundaries, and various inhomogeneous factors are closely related to the transport properties of manganites due to the resistivity is the structure-sensitive parameters [10], and can induce various novel effects as interface-dependent ER effect, MR effect [11,12], EPIR effect [13][14][15] and low field magnetoresistance (LFMR) effect [16,17]. * Author for correspondence (cpyang@hubu.edu.cn) For the NdSrMnO system with doping ratio x = 0.3, Nd 0.7 Sr 0.3 MnO y generally exhibits an optimal double exchange interaction (DE) accompanied with the Curie temperatures of 229-239 K, and the electromagnetic transport is comprehensively investigated [18][19][20][21][22][23][24]. In this work, an unusual electrical transport behaviour is observed in the NSMO ceramics prepared by solid-state reaction and sequentially thermal-pressure treatment.…”

Section: Introductionmentioning

confidence: 99%

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The enhanced interface effect induced by thermal pressure in Nd0.7Sr0.3MnO y ceramics

Chen

Shi

et al. 2016

Bull Mater Sci

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Polycrystalline ceramics Nd 0.7 Sr 0.3 MnO y prepared by solid-state reaction were treated under high pressure of 9 GPa and temperature of 1000 K. The electrical transport behaviour of samples were investigated by a variable temperature system and a peculiar transport character was found at low temperature of 120 K, the I-V showed an obvious step-shape behaviour with the increase in the measurement voltages; at much lower temperature of 12.3 K, the I-V curves exhibited a notable symmetric hysteresis at a critical voltage of 4.5 V, although a linear I-V behaviour at 293 K. On the other hand, the R-T measurement revealed that the resistivity peak (resistivity at T MI ) disappeared gradually and is replaced by a resistivity platform with the increase in the load currents, surprisingly, the resistivity platform broadened with continuous increase in the load currents but weakened when an external magnetic field was applied. All of these phenomena were not observed for the un-treated sample. The particle attenuated and the enhanced interface effect which resulted from the violent thermal-pressure treatment was responsible for the unique electromagnetic transport.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The enhanced interface effect induced by thermal pressure in Nd0.7Sr0.3MnO y ceramics

Chen

Shi

et al. 2016

Bull Mater Sci

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Effect of thermal-pressure treatment on magnetoelectric transport in Nd0.7Sr0.3MnO3 ceramics

Chen¹,

Yang²,

Zhi-Lan³

et al. 2012

Acta Phys. Sin.

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The Nd0.7Sr0.3MnO3 compounds are treated at a thermal pressure (HTP) of temperature 1273 K and pressure 9 GPa. The results show that the crystal structure and space group of samples keep unchanged while the lattice and structural parameters, especially the microscopic structure change remarkably, which produces significant influence on magnetoelectric transport of the Nd0.7Sr0.3MnO3 ceramic. For electrical transport of the HTP sample, no electroresistance (ER) effect occurs when loaded current is less than 1.5 mA, however, an ER effect around 200% takes place when the loaded current goes up to more than 1.5 mA. Interestingly, the peak at -T curve disappears by replacing a platform, which can return to a peak if a magnetic field is applied again. The formation of intergranular phase and insulating behaviour of sample under thermal pressure condition are suggested to be responsible for the unique transport properties.

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Interfacial trap dependent resistance switching effect in Nd0.7Sr0.3MnO3 ceramic

Chen¹,

Li²,

Yang³

2016

Acta Phys. Sin.

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Switching behavior in Nd0.7Sr0.3MnO3 ceramic is investigated widely due to its close association with the new storage Resistive random access memory. In this work, we discuss the transport characteristic of the electrode-bulk interface and boundary/phase interface, and explain the differences between the two interfaces. Firstly, the Nd0.7Sr0.3MnO3 ceramic samples are prepared by solid-phase reaction and high-energy milling methods, respectively. And the transport properties of the two interfaces are investigated respectively by the two-line and four-line measurements. The results show that the Ag electrode-bulk interfaces exhibit nonlinear and hysteretic I-V characteristics and a stable resistance switching effect, and the stability of resistance switching behavior is reduced gradually with the increase of temperature. For the boundaries/phase interfaces, however, it does not exhibit resistance switching effect, although a nonlinear and hysteretic I-V behavior can also be observed under the four-line measurement mode. Various defects in the two interfaces act as traps and regulate the interfacial transports and result in the nonlinear and hysteretic I-V behaviors in the two interfaces. Additionally, the simulation experiments reveal that a large number of boundaries/phase interfaces and larger leakage conductance resulting from the complex connections of boundaries/phase interfaces are the main responsibilities for the fact that the boundaries/(phase) interfaces do not exhibit EPIR behavior as the electrode-bulk interface.

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Alternating-Current Transport Properties of the Interface between Nd_0.7Sr_0.3MnO₃Ceramic and a Ag Electrode

Cited by 3 publications

References 30 publications

The enhanced interface effect induced by thermal pressure in Nd0.7Sr0.3MnO y ceramics

The enhanced interface effect induced by thermal pressure in Nd0.7Sr0.3MnO y ceramics

Effect of thermal-pressure treatment on magnetoelectric transport in Nd0.7Sr0.3MnO3 ceramics

Interfacial trap dependent resistance switching effect in Nd0.7Sr0.3MnO3 ceramic

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