Alternating current operation of low-Mg-doped p-GaN Schottky diodes

Aoki, Toshichika; Kaneda, Naoki; Mishima, Tomoyoshi; Shiojima, Kenji

doi:10.1016/j.tsf.2013.08.039

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I-v Characteristics1

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Cited by 3 publications

(2 citation statements)

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“…Recently, Aoki et al [8]have explored current-voltage (I-V) characteristics of low-Mgdoped p-GaN Schottky diodes with variations of voltage sweep speed and sweep directions. It was reported that the current flow in such devices is generally governed by multistep tunneling with the involvement of dislocations even at room temperature [9].…”

Section: Introductionmentioning

confidence: 99%

A new type photodiode: p-Si/GaN pn junction in series with GaN/Ag Schottky diode

Yakuphanoğlu

Shokr

Gupta

et al. 2015

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

A new type photodiode: p-Si/GaN pn junction in series with GaN/Ag Schottky diode

Yakuphanoğlu

Shokr

Gupta

et al. 2015

Journal of Alloys and Compounds

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“…We have reported the same phenomenon that because of large qf B , the magnitude of the true current was very small, so that the displacement current was detected in the p-GaN Schottky contacts. 37) The qf B is almost the same as that of the unetched samples, and the n-value slightly decreased. For the ICP etched samples, because a larger displacement current affected the linear relationship, extremely large qf B and low n-value were calculated.…”

Section: I-v Characteristicsmentioning

confidence: 72%

Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy—comparison between n- and p-type GaN samples

Matsuda

Horikiri

Yoshida

et al. 2021

Jpn. J. Appl. Phys.

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We present the experimental results on mapping characterization of the effects of photo-electrochemical (PEC) and inductive coupled plasma (ICP) etchings for both p-type and n-type GaN Schottky contacts by using scanning internal photoemission microscopy to clarify the current transport mechanism. The photoyield (Y) increased in the PEC etched regions by 4%–5% for the n-GaN, by 15% for the p-GaN samples. We proposed a model that the ICP etching induced donor-type damages in the vicinity of the GaN surfaces. In the ICP etched regions, Y increased by 10% for the n-GaN as well, but significantly decreased by 80% for the p-GaN samples. The PEC etching has less effect on the Schottky characteristics than the ICP etching, especially in the p-type sample.

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