AlN films prepared on 6H–SiC substrates under various sputtering pressures by RF reactive magnetron sputtering

Kuang, Xu-Ping; Zhang, Huayu; Wang, Gui‐Gen; Lin, Chen; Zhu, Can; Jin, Lei; Sun, Rui; Han, Jiecai

doi:10.1016/j.apsusc.2012.08.121

Cited by 25 publications

(5 citation statements)

References 34 publications

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“…It has been reported that theoretically, synthesising monolayered AlN via the epitaxial growth technique is preferred over mechanical exfoliation [38]. At present, wurtzite AlN film has been papered on substrates of 6H-SiC at 300 °C [39]. Interestingly, different forms of AlN, such as nanoribbons [40], nanowires [41], and nanosheets [42], also exhibit notable properties.…”

Section: Introductionmentioning

confidence: 99%

High-efficiency photocatalyst for water splitting: a Janus MoSSe/XN (X = Ga, Al) van der Waals heterostructure

Ren

Wang

Luo

et al. 2020

J. Phys. D: Appl. Phys.

121

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Two-dimensional van der Waals (vdW) heterostructures were constructed using MoSSe and XN (X = Ga, Al) via density functional calculations to serve as water splitting photocatalysts. Both the MoSSe/GaN and MoSSe/AlN heterostructures are energetically, dynamically and thermally stable. Interestingly, they exhibited type-II band structures, indicating the ability to continuously separate photogenerated electrons and holes. They also have appropriate band edge positions for redox reaction potentials of water splitting at pH 0. Remarkably, the MoSSe/GaN vdW heterostructure possessed excellent carrier mobility for holes along both the transport directions. Besides, the charge transfer between the MoSSe and XN layers induced a strong built-in electric field, which further separated the photogenerated carriers. In addition, the MoSSe/GaN and MoSSe/AlN vdW heterostructures exhibit good optical absorption ability toward solar irradiation. All these excellent properties render the MoSSe/GaN and MoSSe/AlN heterostructures are high-efficiency photocatalysts for water splitting.

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Section: Introductionmentioning

confidence: 99%

High-efficiency photocatalyst for water splitting: a Janus MoSSe/XN (X = Ga, Al) van der Waals heterostructure

Ren

Wang

Luo

et al. 2020

J. Phys. D: Appl. Phys.

121

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“…The principal free path of the atoms is reduced when the deposition pressure is increased, which raises the possibility of particle collisions inside the gas environment. As a result, their kinetic energy is lowered when charged particles collide with a target surface [33][34][35]. Using the well-known Scherrer's formula [36], we were able to establish the average crystallite size "t."…”

Section: Resultsmentioning

confidence: 99%

Analysis of Physical, Ocular, and Aquaphobic Properties of Zirconium Oxide Nanofilms by Varying Sputtering Pressure

Kumar

Dave

Krishnan

et al. 2022

Journal of Nanomaterials

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A thin coating of zirconium oxide (ZrO2) is placed on outdoor high-voltage insulators to minimize air fouling. ZrO2 thin film coatings were deposited on glass substrates using a DC sputtering (reactive magnetron) technique with sputtering pressures ranging from 5 to 25 mTorr. Characterization of the deposited films was carried out utilizing approaches such as XRD, AFM, CAG, and spectrophotometer. Following the XRD peaks, when 15 mTorr is reached, the average crystallite size increases, after which it begins to decline. The wettability of the deposited thin layer is associated with the coarseness calculated by AFM. At 15 mTorr pressure, maximum aquaphobic is achieved (107.45°). At this pressure, the transmittance and bandgap were similarly determined to be 90% and 5.43 eV, respectively.

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“…Aluminum nitride is a very important semiconductor material [1][2][3][4][5]. Compared with other III-nitrides, it has the widest direct band gap of 6.2 eV at room temperature, high stability, high volume resistivity (10 11 -10 13 ), high thermal conductivity (285 W mK −1 ), high breakdown field (1.2-1.8 × 10 6 V cm −1 ) [6][7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Optical and structural properties of AlN thin films deposited on different faces of sapphire substrates

Yin¹,

Zhou²,

Li³

et al. 2021

Semicond. Sci. Technol.

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We report the comprehensive spectroscopic results of AlN thin films deposited on the A-, R- and C-surfaces of sapphire substrates by radio frequency magnetron sputtering. The optical and structural properties of the epitaxial-grown AlN films were characterized using various techniques of high-resolution x-ray diffraction spectroscopy, x-ray photoelectron spectroscopy, Raman scattering spectroscopy, spectroscopic ellipsometry and associated analytical tools. Our large number of measurement results clearly show that sapphire substrates of different polarities have effects on the surface roughness, dislocation density, grain size, microstrain, and surface oxygen binding capacity of the film grown on its surface. The results obtained from Ellipsometry measurements show that the thickness, band gap and roughness of AlN films grown on C-plane sapphire are the smallest among the three samples. After careful analyses of the variable temperature Raman spectra, as the temperature rises from 80 K to 800 K, the AlN film has always exhibited tensile stress. In the same temperature range, the tensile stress of the AlN film grown on the C-plane sapphire has the greatest effect with temperature. The lifetime of E2 (high) phonons gradually decays with the increase of temperature.

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AlN films prepared on 6H–SiC substrates under various sputtering pressures by RF reactive magnetron sputtering

Cited by 25 publications

References 34 publications

High-efficiency photocatalyst for water splitting: a Janus MoSSe/XN (X = Ga, Al) van der Waals heterostructure

High-efficiency photocatalyst for water splitting: a Janus MoSSe/XN (X = Ga, Al) van der Waals heterostructure

Analysis of Physical, Ocular, and Aquaphobic Properties of Zirconium Oxide Nanofilms by Varying Sputtering Pressure

Optical and structural properties of AlN thin films deposited on different faces of sapphire substrates

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