AlN bulk single crystal growth on 6H-SiC substrates by sublimation method

Nagai, Ichiro; Kato, Tomohisa; Miura, Takahiro; Kamata, Hiroyuki; Naoe, Kunihiro; Sanada, Kazuo; Okumura, Hajime

doi:10.1016/j.jcrysgro.2010.05.044

Cited by 43 publications

(40 citation statements)

References 17 publications

(41 reference statements)

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“…A negative impact that a foreign substrate makes on a growing boule is the generation of defects at initial stages of the boule growth. The improvement of crystal quality with an increase in the boule thickness was reported: a low etch pit density (7 × 10 4 cm −2 ) and narrow 0002 rocking curves (58 arcs) were achieved at a thickness of ∼8 mm [7]. In the meantime, the best known thin AlN layers grown on SiC (also called as AlN templates) show a higher etch pit density, (2-5) × 10 5 cm −2 , as well as broader rocking curves: 120 and 200 arcs for the symmetric 0002 and asymmetric 1013 reflections, respectively [2].…”

Section: Introductionmentioning

confidence: 93%

“…The increase in the size of AlN boules is achieved by heteroepitaxial PVT growth while using SiC substrates [2,[6][7][8]. A negative impact that a foreign substrate makes on a growing boule is the generation of defects at initial stages of the boule growth.…”

Section: Introductionmentioning

confidence: 99%

“…However, there are some problems associated with the use of these techniques. Close to the interface, the dislocation density is high enough (4 × 10 6 cm −2 [7]) to prevent the analysis of individual dislocations with using the X-ray topography. At the same time, this density is insufficient for the detection of dislocations by TEM.…”

Section: Introductionmentioning

confidence: 99%

“…Peak broadening analysis may give only some general conclusions about prevailing type of dislocations as well as most typical dislocation configurations. Unlike the freestanding boules [1,3], in which the dislocations were successfully examined by topography [4], AlN templates are usually investigated by using both X-ray rocking curves and a wet-chemical etching method [2,7].…”

Section: Introductionmentioning

confidence: 99%

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Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates

Argunova

Gutkin

et al. 2017

Crystals

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Abstract:To exploit unique properties of thin films of group III-nitride semiconductors, the production of native substrates is to be developed. The best choice would be AlN; however, presently available templates on sapphire or SiC substrates are defective. The quality of AlN could be improved by eliminating the substrate during the layer growth. In this paper, we demonstrate freestanding AlN layers fabricated by an SiC substrate evaporation method. Such layers were used to investigate dislocation structures near the former AlN-SiC interface. Specimens were characterized by synchrotron radiation imaging, triple-axis diffractometry and transmission electron microscopy (TEM). We found that the evaporation process under non-optimal conditions affected the dislocation structure. When the growth had been optimized, AlN layers showed a uniform distribution of dislocations. The dislocations tended to constitute low-angle subgrain boundaries, which produced out-of-plane and in-plane tilt angles of about 2-3 arc-min. Similar broadening was observed in both symmetric and asymmetric rocking curves, which proved the presence of edge, screws as well as mixed dislocation content. TEM revealed arrays of edge threading dislocations, but their predominance over the other threading dislocations was not supported by present study. To explain the experimental observations, a theoretical model of the dislocation structure formation is proposed.

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Section: Introductionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates

Argunova

Gutkin

et al. 2017

Crystals

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“…[33] Although there are still challenges, such as contamination from impurities, lack of large-sized AlN seeds, and difficulty in tailoring desired thermal profile inside the growth reactor that hinder the reproducible growth to cite a few, [34] several groups have achieved PVT-grown AlN single crystals with diameters up to 2 inch. [32,[35][36][37][38][39] X-ray rocking curves with a full width at half maximum (FWHM) close to 30 arcsec for both (0002) and (101 2) reflections and etch pit densities (EPDs) below 10 4 cm -2 were reported with an usable area of ~85%. [32] Low dislocation density AlGaN epilayers with both symmetric and asymmetric rocking curves below 100 arcsec have been grown on these AlN wafers.…”

Section: Growth and Optical Properties Of Bulk Aln For Duv Ledsmentioning

confidence: 98%

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Ding¹,

Avrutin²,

Özgür³

et al. 2017

Preprint

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Abstract:We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues into discussion of LED designs enabling high device performance followed by the review of advances in the methods for the growth of bulk single crystal AlN intended as a native substrate together with a discussion of its UV transparency. It should be stated, however, that due to the high-cost of bulk AlN substrates at the time of this writing, the growth of DUV LEDs on foreign substrates such as sapphire still dominates the field. On the deposition front, the heteroepitaxial growth approaches incorporate high-temperature metal organic chemical vapor deposition (MOCVD) and pulsed-flow growth, a variant of MOCVD, with the overarching goal of enhancing adatom surface mobility, and thus epitaxial lateral overgrowth which culminates in minimization the effect of lattice-and thermal-mismatches. This is followed by addressing the benefits of pseudomorphic growth of strained high Al-molar fraction AlGaN on AlN. Finally, methods utilized to enhance both p-and n-type conductivity of high Al-molar fraction AlGaN are reviewed.

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Growth of AlN single crystals on 6H‐SiC (0001) substrates with AlN MOCVD buffer layer

Zuo

Wang

Chen

et al. 2012

Cryst. Res. Technol.

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Abstract6H‐SiC (0001) deposited 300 nm thick AlN film by MOCVD was used as the substrate to grow AlN crystals by the physical vapour transport (PVT) method. It was confirmed that c‐axis oriented AlN films were grown and this material had a 3D growth mode. The root mean square (RMS) value for the film was measured to be 2.17 nm. Nucleation and further growth of AlN on so prepared substrate was investigated. Colorless and transparent AlN crystal with 1 mm thick and 40 mm in diameter was obtained after 4 h growth on this substrate. The transparent AlN showed strong (0001) texture XRD patterns, only the (0002) reflection was observed in symmetric θ‐2θ scans. The full width at half maximum for a (0002) X‐ray rocking curve was less than 0.1° indicating good crystalline quality. Anisotropic etchings in molten KOH shows that the growth (0001) plane exposed to the AlN source predominately has an aluminum polarity, no N‐polar inversion domains were observed. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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AlN bulk single crystal growth on 6H-SiC substrates by sublimation method

Cited by 43 publications

References 17 publications

Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates

Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Growth of AlN single crystals on 6H‐SiC (0001) substrates with AlN MOCVD buffer layer

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