Grain boundary segregation of sp-valence impurities in b.c.c. transition metals (a-Fe) is investigated using a tight-binding (TB) type electronic theory of s, p, and d-basis orbitals: Particular attention is paid for Mg, Al, Si, P, S, and C1 impurities a t a Z = 5 tilt grain boundary in a-Fe. Band parameters for host and impurity atoms are determined within Harrison's universal TB scheme and relative electronic energy levels are taken from atomic structure calculations by Herman andskillman. It is shown that the segregation energy AEsegr for sp-valence impurities is negative (attractive interaction) and exhibits parabolic trend as a function of the number of electrons Nimp (= NimP+ + NimP) in the sp-band.
Mit einer ,,tight-binding (TB)"-Elektronentheorie vbn s-, p-und d-Basisorbitalen wird