Alloying, co-doping, and annealing effects on the magnetic and optical properties of MOCVD-grown Ga1−xMnxN

Kane, Matthew H.; Straßburg, Martin; Asghar, Ali; Fenwick, William E.; Senawiratne, Jayantha; Song, Qi; Summers, Christopher J.; Zhang, Z. John; Dietz, N.; Ferguson, Ian T.

doi:10.1016/j.mseb.2005.09.056

Cited by 18 publications

(10 citation statements)

References 28 publications

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“…After Si co-doping, we find that the ferromagnetism decreases to a certain degree which is unconspicuous and different from the results reported by Kane et al [27,28]. In their reports, they demonstrated that co-doping with either Si or Mg during the growth process resulted in a large decrease of the saturation magnetization value.…”

Section: Resultscontrasting

confidence: 94%

Influence of Si co-doping on magnetic, electrical and optical properties of Ga1–x Mn x N film grown by MOCVD

Zhang

Yang

Zhang

et al. 2011

Sci. China Technol. Sci.

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A detailed study is presented on magnetic, electrical and optical properties of Ga 1-x Mn x N: Si film grown by metal organic chemical vapor deposition (MOCVD) with high-purity SiH 4 as the Si dopant source. The room-temperature field dependence magnetization and zero-field-cooled (ZFC)/field-cooled (FC) measurements indicate that the film remains room-temperature ferromagnetism and it declines slightly after Si co-doping. However, room-temperature Hall measurements indicate that the electrical property of the film improves distinctly compared with Ga 1-x Mn x N. Cathode luminescence (CL) measurements show an obvious enhancement in luminous property and different peak strength changes at three different positions. Therefore, we demonstrate that Fermi level and the electron structure of Mn atoms will change with variation of the impurities co-doped and the intrinsic defects and this may be related with room-temperature ferromagnetism and the other corresponding properties of the film.

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Section: Resultscontrasting

confidence: 94%

Influence of Si co-doping on magnetic, electrical and optical properties of Ga1–x Mn x N film grown by MOCVD

Zhang

Yang

Zhang

et al. 2011

Sci. China Technol. Sci.

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“…No other absorption features were detected further in the infrared spectral range (down to 0.5 eV). This suggests that the location of the Fermi level in the investigated samples in the broad absorption band is around 1.8 eV above the top of the valence band, and even closer to the conduction band than for the Si codoped sample [4]. Absorption measurements conducted on Ga 1Àx Fe x N and Ga 1Àx Cr x N did not reveal any additional absorption edge except that related to GaN.…”

Section: Optical Properties Of Ga 1àx Tm X Nmentioning

confidence: 72%

“…XRD scans can attribute this phase to either MnN or Mn 3 GaN type phases. On the other hand, the annealed samples capped with GaN show no change in surface morphology even at elevated temperatures [4]. This suggests that the primary mechanism for the decay of the thermodynamically unstable Ga 1Àx Mn x N compound is through nitrogen desorption and phase rearrangement of the surface at the Ga 1Àx Mn x N-to-atmosphere interface in the absence of a reactive nitrogen environment that is present during MBE or MOCVD growth.…”

Section: Methodsmentioning

confidence: 99%

“…Moreover, if the magnetization is solely due to incommensurate impurities in a heterogeneous system, then the relative difference in these precipitates with TM doping should point to their physical nature (e.g. Mn 4 N is ferromagnetic with a T C of 743 K, while Fe 3 N has a T C of 535 K). RE doping with gadolinium has also been carried out for GaN in this study.…”

Section: Introductionmentioning

confidence: 99%

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MOVPE growth of transition-metal-doped GaN and ZnO for spintronic applications

Gupta

Fenwick

Melton

et al. 2008

Journal of Crystal Growth

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“…The coercive field for these films was approximately 50 Oe, and the saturation magnetization varied from 40 emu/cm 3 to 48 emu/cm 3 . The magnetization strength (48 emu/cm 3 ) is stronger than what we previously achieved for Gal_xMnxN [18]. The films produced with CP3Gd showed much lower magnetic moments even at much higher precursor flow rates.…”

Section: IVmentioning

confidence: 56%

Development of room temperature spin polarised emitters

Melton

Liu

Kane

et al. 2011

8th International Conference on High-Capacity Optical Networks and Emerging Technologies

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The mechanism leading to RT ferromagnetism in Gd doped GaN is not well understood. Oxygen impurities have been proposed as a possible contributor to ferromagnetic behavior in Gat_xGd.N films but the physical mechanism is not clear. In this work, Gat_.GdxN thin films were grown by MOCVD using two different metalorganic Gd precursors (TMHD)3Gd and Cp3Gd.Samples grown with (TMHD)3Gd, which contains oxygen, exhibited much higher magnetic moments. Co-doping of the Gat_ xGd.N films with Si produced conductive n-type material, while co-doping with Mg produced compensated p-type material. Si and Mg co-doped films exhibited room temperature ferromagnetism and this material was then incorporated into a room temperature spin-polarized LED. Electroluminescence from this device had a degree of polarization of 14.6% at 5000 Gauss and retained a degree of polarization of 9.3% after removal of the applied magnetic field.

show abstract

Alloying, co-doping, and annealing effects on the magnetic and optical properties of MOCVD-grown Ga1−xMnxN

Cited by 18 publications

References 28 publications

Influence of Si co-doping on magnetic, electrical and optical properties of Ga1–x Mn x N film grown by MOCVD

Influence of Si co-doping on magnetic, electrical and optical properties of Ga1–x Mn x N film grown by MOCVD

MOVPE growth of transition-metal-doped GaN and ZnO for spintronic applications

Development of room temperature spin polarised emitters

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