Alloy broadening in photoluminescence spectra of GaxIn1−xAsyP1−y lattice matched to InP

Benzaquen, R.; Charbonneau, S.; Sawadsky, N.; Roth, A. P.; Leonelli, R.; Hobbs, L.; Knight, Geoffrey

doi:10.1063/1.356239

Cited by 18 publications

(5 citation statements)

References 30 publications

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“…In addition, as shown in figure 3(c), the abnormal shape of the lowenergy PL peak is the distribution of localized excitons, and the broadening lineshape may be explained with the localized excitons model [32,33]. Such significant broadening of the luminescence is attributed to the random distribution of the Mo and W, known as alloy broadening [29][30][31]. Figure 4(a) shows schematic diagrams of different disorder potentials.…”

Section: Introductionmentioning

confidence: 95%

Alloying effect on bright–dark exciton states in ternary monolayer Mo_xW_1–xSe₂

et al. 2017

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Binary transition metal dichalcogenides (TMDCs) in the class MX 2 (M = Mo, W; X = S, Se) have been widely investigated for potential applications in optoelectronics and nanoelectronics. Recently, alloybased monolayers of TMDCs have provided a stable and versatile technique to tune the physical properties and optimize them for potential applications. Here, we present experimental evidence for the existence of an intermediate alloy state between the MoSe 2 -like and the WSe 2 -like behavior of the neutral exciton (X 0 ) using temperature-dependent photoluminescence (PL) of the monolayer Mo x W 1-x Se 2 alloy. The existence of a maximum PL intensity around 120 K can be explained by the competition between the thermally activated bright states and the non-radiative quenching of the bright states. Moreover, we also measured localized exciton (X B ) PL peak in the alloy and the observed behavior agrees well with a model previously proposed for the 3D case, which indicates the theory also applies to 2D systems. Our results not only shed light on bright-dark states and localized exciton physics of 2D semiconductors, but also offer a new route toward the control of the bright-dark transition and tailoring optical properties of 2D semiconductors through defect engineering.

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Section: Introductionmentioning

confidence: 95%

Alloying effect on bright–dark exciton states in ternary monolayer Mo_xW_1–xSe₂

et al. 2017

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“…the radius of the core, the width of the ring, and the height of the low index plugs, bearing in mind that the number of modes that may participate in the lasing process is ultimately limited to those that are within the gain bandwidth of the semiconductor active material. The semiconductor gain medium used in this work is composed of six quantum wells of In x=0.734 Ga 1-x As y=0.57 P 1-y (10 nm thick)/ In x=0.56 Ga 1-x As y=0.938 P 1-y (20 nm thick), resulting in a gain bandwidth that spans from 1.26 μm to 1.59 μm at room-temperature and from 1.27 μm to 1.53 μm at 4.5 K 28 .…”

mentioning

confidence: 99%

Thresholdless nanoscale coaxial lasers

Khajavikhan

Simić

Katz

et al. 2012

Nature

508

412

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The effects of cavity quantum electrodynamics (QED), caused by the interaction of matter and the electromagnetic field in subwavelength resonant structures, have been the subject of intense research in recent years. The generation of coherent radiation by subwavelength resonant structures has attracted considerable interest, not only as a means of exploring the QED effects that emerge at small volume, but also for its potential in applications ranging from on-chip optical communication to ultrahigh-resolution and high-throughput imaging, sensing and spectroscopy. One such strand of research is aimed at developing the 'ultimate' nanolaser: a scalable, low-threshold, efficient source of radiation that operates at room temperature and occupies a small volume on a chip. Different resonators have been proposed for the realization of such a nanolaser--microdisk and photonic bandgap resonators, and, more recently, metallic, metallo-dielectric and plasmonic resonators. But progress towards realizing the ultimate nanolaser has been hindered by the lack of a systematic approach to scaling down the size of the laser cavity without significantly increasing the threshold power required for lasing. Here we describe a family of coaxial nanostructured cavities that potentially solve the resonator scalability challenge by means of their geometry and metal composition. Using these coaxial nanocavities, we demonstrate the smallest room-temperature, continuous-wave telecommunications-frequency laser to date. In addition, by further modifying the design of these coaxial nanocavities, we achieve thresholdless lasing with a broadband gain medium. In addition to enabling laser applications, these nanoscale resonators should provide a powerful platform for the development of other QED devices and metamaterials in which atom-field interactions generate new functionalities.

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“…The line width of the PL peaks is about 10 meV in samples with the thinnest wells which are the most affected by interfacial layers. The total broadening ⌫ is due to the sum of alloy broadening ⌫ a which we calculate to be 5 meV for this composition 18 and interface roughness broadening ⌫ r , according to the relation ⌫ϭͱ⌫ a 2 ϩ⌫ r 2 , which, for ⌫ϭ10 meV, yields ⌫ r ϭ8.7 meV. This is the energy shift expected for a change of 1 ML for these narrow wells.…”

Section: Discussionmentioning

confidence: 74%

Structural and optical characterization of InP/GaxIn1−xAsyP1−y quantum wells and interfacial layers

Roth

Lévesque

Syme

et al. 1996

Journal of Applied Physics

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Several multiquantum wells of InP/Ga x In 1Ϫx As y P 1Ϫy grown by chemical-beam epitaxy have been studied by high-resolution x-ray diffraction, low-temperature photoluminescence, and Raman scattering to characterize interfacial layers between the barriers and the wells. These interfacial layers are created during the initial stage of growth of the quaternary material as a result of the longer transient for the saturation of the group-III elements flux. The combination of x-ray diffraction and photoluminescence allows a precise determination of the interfacial layer thickness and composition grading and shows that interface roughness is of the order of 1 monolayer. Raman scattering confirms these results and is used to determine values of the sound velocity and of the index of refraction in the quaternary alloy material. ͓S0021-8979͑96͒03419-6͔

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Alloy broadening in photoluminescence spectra of GaxIn1−xAsyP1−y lattice matched to InP

Cited by 18 publications

References 30 publications

Alloying effect on bright–dark exciton states in ternary monolayer Mo_xW_1–xSe₂

Alloying effect on bright–dark exciton states in ternary monolayer Mo_xW_1–xSe₂

Thresholdless nanoscale coaxial lasers

Structural and optical characterization of InP/GaxIn1−xAsyP1−y quantum wells and interfacial layers

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Alloy broadening in photoluminescence spectra of GaxIn1−xAsyP1−y lattice matched to InP

Cited by 18 publications

References 30 publications

Alloying effect on bright–dark exciton states in ternary monolayer MoxW1–xSe2

Alloying effect on bright–dark exciton states in ternary monolayer MoxW1–xSe2

Thresholdless nanoscale coaxial lasers

Structural and optical characterization of InP/GaxIn1−xAsyP1−y quantum wells and interfacial layers

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Alloying effect on bright–dark exciton states in ternary monolayer Mo_xW_1–xSe₂

Alloying effect on bright–dark exciton states in ternary monolayer Mo_xW_1–xSe₂